Semiconductor device including self-protecting current sensor

Patent metadata

Field	Value
Publication number	US-10249612-B2
Application number	US-201514709583-A
Country	US
Kind code	B2
Filing date	May 12, 2015
Priority date	May 14, 2014
Publication date	Apr 2, 2019
Grant date	Apr 2, 2019

Abstract

A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor body includes a load current component having a load current transistor area and a sensor component including a sensor transistor area. The sensor transistor area has first and third transistor area parts differing from a second transistor area part between the first and third transistor area parts by a sensor transistor area element being absent in the second transistor area part. The second transistor area part is electrically disconnected from a parallel connection of the first and third transistor area parts by the sensor transistor area element being absent in the second transistor area part.

First claim

What is claimed is:

1. A semiconductor device comprising a semiconductor body having a first surface and a second surface opposite to the first surface, the semiconductor body comprising:
a load current component comprising a load current transistor area; and
a sensor component comprising a sensor transistor area,
wherein the sensor component is operable to supply a current proportional to a load current flowing through the load current component,
wherein the sensor transistor area is at least partly surrounded by the load current transistor area, or arranged at a boundary portion of one or more sides of the load current transistor area,
wherein the sensor transistor area comprises first and third transistor area parts differing from a second transistor area part between the first and the third transistor area parts by a sensor transistor area element being absent in the second transistor area part,
wherein the second transistor area part is electrically disconnected from a parallel connection of the first and the third transistor area parts by the sensor transistor area element being absent in the second transistor area part.

2. The semiconductor device of claim 1 , wherein the sensor transistor area element is a source region of the sensor transistor area.

3. The semiconductor device of claim 1 , wherein the sensor transistor area element is an electric contact structure on a source region of the sensor transistor area.

4. The semiconductor device of claim 1 , wherein the first to third transistor area parts are arranged along a first lateral direction such that source regions of the first and the third transistor area parts are electrically coupled by a conductive line extended along the first direction.

5. The semiconductor device of claim 1 , further comprising:
a first isolation layer on the first surface of the semiconductor body;
a first wiring layer on the first isolation layer, the first wiring layer comprising a load current contact structure electrically coupled to the load current transistor area and a sensor contact structure electrically coupled to the sensor transistor area;
a second isolation layer on the first wiring layer; and
a second wiring layer on the second isolation layer overlapping the load current transistor area and the sensor transistor area, the second wiring layer being electrically coupled to the load current contact structure and isolated from the sensor contact structure.

6. The semiconductor device of claim 5 , wherein the load current contact structure and the sensor current contact structure comprise conductive lines extending in parallel.

7. The semiconductor device of claim 5 , wherein the sensor transistor area element is a source region of the sensor transistor area at the first surface of the semiconductor body.

8. The semiconductor device of claim 5 , wherein the sensor transistor area element is an electric contact structure electrically connecting the sensor contact structure with a source region of the sensor transistor area, the electric contact structure extending through the first isolation layer.

9. The semiconductor device of claim 1 , wherein source regions of the sensor transistor area and source regions of the load current transistor area are at the first surface and a common drain region is at the second surface of the semiconductor body.

10. The semiconductor device of claim 9 , wherein the load current component comprises a first trench and the sensor component comprises a second trench, the first and second trenches each comprising a gate electrode, the gate electrodes being electrically coupled with each other.

Assignees

• Infineon Technologies Ag

Inventors

• Decker Stefan
• Illing Robert
• Nelhiebel Michael

Classifications

• H10W42/80

  protecting against overcurrent or overload, e.g. fuses or shunts (integrated devices comprising arrangements for electrical protection H10D89/60) · CPC title

• H01L2924/00

  Electricity · mapped topic

• H01L29/0653

  Electricity · mapped topic

• H01L23/62

  Electricity · mapped topic

• H01L29/7827

  Electricity · mapped topic