Silicide alloy film for semiconductor device electrode, and production method for silicide alloy film

Patent metadata

Field	Value
Publication number	US-10246770-B2
Application number	US-201615573770-A
Country	US
Kind code	B2
Filing date	Jun 24, 2016
Priority date	Jun 26, 2015
Publication date	Apr 2, 2019
Grant date	Apr 2, 2019

Abstract

The present invention relates to a silicide alloy film that is formed on a substrate containing Si, the silicide alloy film including a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 2.5 eV or less and 4.0 eV or more, and Si, the silicide alloy film having a work function of 4.3 eV or more and 4.9 eV or less. Here, the metal M1 is preferably Pt, Pd, Mo, Ir, W or Ru, and the metal M2 is preferably Hf, La, Er, Ho, Er, Eu, Pr or Sm. The silicide alloy film according to the present invention is a thin-film which has excellent heat-resistance and favorable electrical property.

First claim

The invention claimed is:

1. A silicide alloy film that is formed on a substrate containing Si: comprising, a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 4.0 eV or less, and Si having a work function of 4.3 eV or more and 4.9 eV or less; and in a relationship of the peak intensity (X) of a diffraction peak of a mixed crystal (M1 x M2 y Si) including the metal M1, the metal M2 and Si, the peak intensity (Y) of a diffraction peak of a silicide (M1 a Si) of the metal M1 and the peak intensity (Z) of a diffraction peak of a silicide (M2 b Si) of the metal M2, which are observed by X-ray diffraction analysis, the ratio ((Y+Z)/X) of the sum of Y and Z to X is 0.1 or less, wherein M1 is Pt and M2 is Hf.

2. The silicide alloy film according to claim 1 , wherein the content of Si is 33 at % or more and 50 at % or less.

3. The silicide alloy film according to claim 1 , wherein the total concentration of C and O as impurities is 5% by mass or less.

4. The silicide alloy film according to claim 1 , wherein the root mean surface roughness (RMS) is 5 nm or less.

5. A method for producing the silicide alloy film according to claim 1 , comprising forming on a Si substrate a thin-film including the metal M1 and the metal M2, and then heat-treating the Si substrate to silicify the metal M1 and the metal M2.

Assignees

• Tanaka Precious Metal Ind
• Tokyo Inst Tech

Inventors

• Ohmi Shunichiro
• Masahiro Yasushi

Classifications

• H10P14/414

  of metal-silicide materials · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P14/44

  Physical vapour deposition [PVD] · CPC title

• H10D64/0131 Primary

  the additional conductive layer comprising a silicide layer formed by the silicidation reaction between the layer of silicon with a metal layer which is not formed by metal implantation · CPC title

• H10D64/0112

  using conductive layers comprising silicides · CPC title