Substrate liquid processing method and substrate liquid processing apparatus

Patent metadata

Field	Value
Publication number	US-10242889-B2
Application number	US-201514828579-A
Country	US
Kind code	B2
Filing date	Aug 18, 2015
Priority date	Aug 26, 2014
Publication date	Mar 26, 2019
Grant date	Mar 26, 2019

Abstract

Disclosed is a substrate liquid processing method. The method includes producing a processing liquid including deionized water, carbon dioxide, and ammonia, which has a PH of a predetermined value in a range of pH 5 to 9; and processing a substrate having a metal exposed, using the processing liquid.

First claim

What is claimed is:

1. A substrate liquid processing method comprising:
producing a processing liquid including deionized water, carbon dioxide, and ammonia, the processing liquid having a pH in a range of pH 7 to pH 9 and a resistivity of 0.05 MΩ·cm or less; and
processing a substrate having an exposed metal using the processing liquid generated in the producing the processing liquid,
wherein the producing the processing liquid includes:
dissolving the carbon dioxide in the deionized water to generate carbon dioxide dissolved water;
discarding the carbon dioxide dissolved water until the carbon dioxide dissolved water reaches a target resistivity of 0.2 MΩ·cm as measured by a resistivity meter; and
adding ammonia water including the ammonia to the carbon dioxide dissolved water having the resistivity of 0.2 MΩ·cm to adjust the pH of the processing liquid in the range of pH 7 to pH 9 and lower a resistivity of the processing liquid to a resistivity of 0.05 MΩ·cm or less.

2. The method of claim 1 , wherein a predetermined dissolution amount of carbon dioxide is dissolved in the deionized water to obtain the resistivity of 0.2 MΩ·cm.

3. The method of claim 1 , wherein in the dissolving the carbon dioxide, a resistivity of the carbon dioxide dissolved water is measured, and a dissolution amount of carbon dioxide in the deionized water is controlled such that the measured resistivity of the carbon dioxide dissolved water becomes a value equal to or less than the resistivity of 0.2 MΩ·cm of the carbon dioxide dissolved water.

4. The method of claim 1 , wherein in the adding the ammonia water, a predetermined amount of ammonia water is added to the carbon dioxide dissolved water.

5. The method of claim 1 , wherein the processing liquid is used for rinsing the substrate after the substrate is subjected to a chemical liquid processing.

6. The method of claim 1 , wherein the processing liquid is used as a pre-treatment of a chemical processing on the substrate, and the pre-treatment is a first liquid processing that is performed on the substrate in a processing unit where the chemical processing is performed.

7. The method of claim 6 , further comprising:
mixing an organic solvent with the processing liquid before the processing liquid is supplied to the substrate.

8. A substrate liquid processing method comprising:
producing a processing liquid including deionized water, carbon dioxide, and ammonia, the processing liquid having a pH in a range of pH 7 to pH 9 and a resistivity of 0.05 MΩ·cm or less; and
processing a substrate having an exposed metal using the processing liquid generated in the producing the processing liquid,
wherein the producing the processing liquid includes:
dissolving the carbon dioxide in the deionized water to generate carbon dioxide dissolved water;
discarding the carbon dioxide dissolved water until the carbon dioxide dissolved water reaches a target resistivity of 0.2 MΩ·cm as measured by a resistivity meter; and
when the resistivity of the carbon dioxide dissolved water reaches 0.2 MΩ·cm, adding ammonia water including the ammonia to the carbon dioxide dissolved water having the resistivity of 0.2 MΩ·cm to adjust the pH of the processing liquid in the range of pH 7 to pH 9 and lower a resistivity of the processing liquid to a resistivity of 0.05 MΩ·cm or less,
wherein a dissolution amount of carbon dioxide in the deionized water is controlled such that the measured resistivity of the carbon dioxide dissolved water becomes a value equal to or less than the resistivity of 0.2 MΩ·cm of the carbon dioxide dissolved water, and
in the adding the ammonia water, a predetermined amount of ammonia water is added to the carbon dioxide dissolved water.

Assignees

• Tokyo Electron Ltd

Inventors

• Nonaka Jun
• Kanno Itaru

Classifications

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title