Method, system, and user interface for metrology target characterization

Patent metadata

Field	Value
Publication number	US-10242290-B2
Application number	US-201414152562-A
Country	US
Kind code	B2
Filing date	Jan 10, 2014
Priority date	Nov 9, 2012
Publication date	Mar 26, 2019
Grant date	Mar 26, 2019

Abstract

Methods and systems are provided, which identify specified metrology target abnormalities using selected metrics and classify the identified target abnormalities geometrically to link them to corresponding sources of error. Identification may be carried out by deriving target signals such as kernels from specified regions of interest (ROIs) from corresponding targets on a wafer, calculating the metrics from the target signals using respective functions and analyzing the metrics to characterize the targets.

First claim

What is claimed is:

1. A method comprising:
acquiring, with an overlay metrology tool, a plurality of overlay metrology target signals from a set of targets on a wafer, wherein at least some of the plurality of overlay metrology target signals are acquired from different target elements of a single target of the set of targets;
executing a target characterization module with a processor;
calculating, with the target characterization module, a plurality of metrics for each of the acquired plurality of target signals;
analyzing, with the target characterization module, the calculated plurality of metrics to determine one or more features of at least one target of the set of targets;
clustering, with the target characterization module, two or more targets of the set of targets according to the calculated plurality of metrics;
analyzing the clustered two or more targets of the set of targets to identify one or more production errors on the wafer; and
configuring the overlay metrology tool based on the identified one or more production errors to improve measurement accuracy during one or more metrology processes.

2. The method of claim 1 , further comprising visualizing the calculated plurality of metrics with respect to a position of the at least one target of the set of targets on the wafer.

3. The method of claim 1 , wherein the analyzing comprises a statistical analysis of the calculated plurality of metrics.

4. The method of claim 1 , further comprising using at least one of the calculated plurality of metrics to identify outlier targets.

5. The method of claim 1 , further comprising visualizing the clustering of the two or more targets.

6. The method of claim 1 , further comprising clustering one or more targets according to the calculated plurality of metrics, and directing the overlay metrology tool to measure one or more target clusters.

7. The method of claim 1 , further comprising visualizing one or more determined features of the calculated plurality of metrics with respect to a position of the at least one target of the set of targets on the wafer.

8. The method of claim 1 , further comprising selecting the calculated plurality of metrics to quantify, with respect to one or more targets of the set of targets, at least one of: periodicity, symmetry, declination, self-correlation, statistically derived features, and parameters of one or more Fourier transformed target signals.

9. The method of claim 1 , wherein the one or more overlay metrology target signals are one or more kernels from one or more specified regions of interest (ROIs) of the corresponding targets.

10. The method of claim 9 , further comprising selecting the calculated plurality of metrics to quantify an ROI position in one or more targets of the set of targets or to identify one or more outlier ROIs in the one or more targets.

11. The method of claim 1 , wherein the one or more overlay metrology target signals are acquired during one or more scatterometry overlay (SCOL) measurements, the method further comprising analyzing one or more target images using the calculated plurality of metrics and the one or more SCOL measurements.

12. The method of claim 11 , further comprising weighting the one or more targets of the set of targets.

13. The method of claim 12 , wherein the analyzing is carried out statistically with respect to the calculated plurality of metrics, the method further comprising using the calculated plurality of metrics to identify one or more targets to optimize SCOL accuracy.

14. The method of claim 1 , wherein the one or more metrology processes includes calibration of the overlay metrology tool.

15. The method of claim 1 , wherein the one or more metrology processes includes operation of the overlay metrology tool during at least one of a training stage or a running stage.

16. A metrology system comprising:
an overlay metrology tool, wherein the overlay metrology tool acquires a plurality of overlay metrology target signals from a set of targets on a wafer, wherein the overlay metrology tool acquires at least some of the plurality of overlay metrology target signals from different target elements of a single target of the set of targets; and
a processor, wherein the processor is configured to execute a target characterization module, wherein the target characterization module is configured for:
calculating a plurality of metrics for the acquired plurality of overlay metrology target signals;
analyzing the calculated plurality of metrics to determine one or more features of at least one target of the set of targets;
clustering two or more targets of the set of targets according to the calculated plurality of metrics;
analyzing the clustered two or more targets of the set of targets to identify one or more production errors on the wafer; and
configuring the overlay metrology tool based on the identified one or more production errors to improve measurement accuracy during one or more metrology processes.

17. The metrology system of claim 16 , wherein the processor is configured to execute a target visualization module configured for visually presenting the calculated plurality of metrics with respect to one or more target positions on the wafer.

18. The metrology system of claim 16 , wherein the target characterization module is configured for characterizing one or more targets by a statistical analysis of the calculated plurality of metrics, wherein the calculated plurality of metrics are selected to quantify, with respect to one or more targets of the sets of targets, at least one of periodicity, symmetry, declination, self-correlation, statistically derived features, or one or more parameters of one or more Fourier transformed target signals.

19. The metrology system of claim 16 , wherein the one or more overlay metrology target signals are one or more kernels from specified regions of interest (ROIs) of the corresponding targets.

20. The metrology system of claim 19 , wherein the target characterization module is further configured for quantifying an ROI position in one or more targets or to identify divergent ROIs in the one or more targets.

21. The metrology system of claim 16 , wherein the processor is configured to execute a visualization module configured for visually presenting at least one target cluster and one or more determined features of the calculated plurality of metrics with respect to a position of one or more targets of the set of targets on the wafer.

22. The metrology system of claim 16 , wherein the target characterization module is further configured for clustering one or more targets according to the calculated plurality of metrics, wherein the processor is further configured to direct the optical metrology tool to measure one or more target clusters.

23. The metrology system of claim 16 , further comprising a scatterometry overlay (SCOL) measurement subsystem configured for carrying out one or more SCOL measurements on the set of targets, wherein the target characterization module is further configured for analyzing the set of targets using the calculated plurality of metrics and the one or more SCOL measurements, and enhancing the SCOL measurements by weighting one or more targets of the set of targets.

24. The metrology system of claim 23 , further comprising a user interface configured for allowing a user to influence one or more target weights associated with the one or more SCOL measurements.

Assignees

• Kla Tencor Corp

Inventors

• Tarshish-Shapir Inna
• Feler Yoel
• Marchelli Anat
• Dinu Berta
• Levinski Vladimir
• Efraty Boris
• Amir Nuriel
• Ghinovker Mark
• Manassen Amnon
• Robinzon Sigalit

Classifications

• H10P74/27

  Structural arrangements therefor · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G06T7/0004 Primary

  Industrial image inspection · CPC title

• G06V10/431

  Frequency domain transformation; Autocorrelation · CPC title

• G06T2207/30148

  Semiconductor; IC; Wafer · CPC title