Method for processing a carrier, a carrier, an electronic device and a lithographic mask

Patent metadata

Field	Value
Publication number	US-10241391-B2
Application number	US-201715447268-A
Country	US
Kind code	B2
Filing date	Mar 2, 2017
Priority date	Feb 20, 2013
Publication date	Mar 26, 2019
Grant date	Mar 26, 2019

Abstract

Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles.

First claim

What is claimed is:

1. A carrier comprising:
a doping profile comprising implanted ions, wherein the doping profile is generated by
changing a three-dimensional structure of a mask layer arranged over the carrier to form at least one mask layer region comprising a substantially step-wise change of a thickness of the mask layer along a predefined direction parallel to a surface of the carrier;
applying an ion implantation process to the at least one mask layer region to form at least one implanted region in the carrier; and
implanted material in a first region of the carrier, wherein the implantation depth of the implanted material in the first region of the carrier is substantially at least one of step-wise decreasing or step-wise increasing along the predefined direction parallel to the surface of the carrier.

2. The carrier according to claim 1 , further comprising:
implanted material in a second region of the carrier,
wherein the implantation depth of the implanted material in the first region of the carrier is substantially step-wise decreasing along the predefined direction parallel to the surface of the carrier, and
wherein the implantation depth of the implanted material in the second region of the carrier is substantially step-wise increasing along the predefined direction parallel to the surface of the carrier.

3. The carrier according to claim 1 ,
wherein a spatial distribution of the implanted material has a Gaussian dependence at least for the material distribution along a direction parallel to an implantation direction.

4. The carrier according to claim 1 ,
wherein a spatial distribution of the implanted material includes regions having the same implanted material concentration, wherein the regions having the same implanted material concentration form planar layers, which are not perpendicular to an implantation direction and not parallel to the surface of the carrier.

5. An electronic device, comprising:
a carrier comprising:
implanted material in a first region of the carrier, wherein an implantation depth of the implanted material in the first region of the carrier is continuously substantially step-wise changing along a predefined direction parallel to a surface of the carrier, and
implanted material in a second region of the carrier,
wherein the implantation depth of the implanted material in the first region of the carrier is substantially step-wise decreasing along the predefined direction parallel to the surface of the carrier, and
wherein the implantation depth of the implanted material in the second region of the carrier is substantially step-wise increasing along the predefined direction parallel to the surface of the carrier.

6. The electronic device according to claim 5 ,
wherein the electronic device is configured as at least one of transistor, a diode, an optical sensor, a strain sensor, and a hall sensor.

7. The electronic device according to claim 5 ,
wherein a spatial distribution of the implanted material includes regions having the same implanted material concentration, wherein the regions having the same implanted material concentration form planar layers which are not perpendicular to an implantation direction and not parallel to the surface of the carrier.

8. The electronic device according to claim 5 ,
wherein the implanted material in the first region of the carrier and the implanted material in the second region of the carrier form a substantially V-shaped doped region.

9. The electronic device according to claim 8 , further comprising:
implanted contact regions for contacting the V-shaped doped region.

10. The electronic device according to claim 8 , further comprising:
at least one V-shaped doped contact region for contacting the V-shaped doped region.

11. The electronic device according to claim 10 ,
wherein the at least one V-shaped doped contact region is aligned perpendicular to the V-shaped doped region.

12. A carrier comprising:
a doping profile comprising implanted ions, wherein the doping profile is generated by
changing a three-dimensional structure of a mask layer arranged over the carrier to form at least one mask layer region comprising a substantially step-wise change of a thickness of the mask layer along a predefined direction parallel to a surface of the carrier;
applying an ion implantation process to the at least one mask layer region to form at least one implanted region in the carrier; and

implanted material in a first region of the carrier, wherein an implantation depth of the implanted material in the first region of the carrier is continuously substantially step-wise changing along a predefined direction parallel to a surface of the carrier, wherein a spatial distribution of the implanted material includes regions having the same implanted material concentration, wherein the regions having the same implanted material concentration form planar layers, which are not perpendicular to an implantation direction and not parallel to the surface of the carrier.

13. The carrier according to claim 12 ,
wherein the spatial distribution of the implanted material has a Gaussian dependence at least for the material distribution along a direction parallel to an implantation direction.

Assignees

• Infineon Technologies Ag

Inventors

• Schneider Jens
• Feick Henning
• Heller Marcel
• Kaiser Dieter

Classifications

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P30/222

  characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221) · CPC title

• H10P30/212

  Through-implantation · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/22

  using masks · CPC title