Method for 2D/3D inspection of an object such as a wafer

Patent metadata

Field	Value
Publication number	US-10240977-B2
Application number	US-201615197408-A
Country	US
Kind code	B2
Filing date	Jun 29, 2016
Priority date	Mar 25, 2016
Publication date	Mar 26, 2019
Grant date	Mar 26, 2019

Abstract

A method is provided for inspecting the surface of an object such as a wafer having tridimensional structures, using a confocal chromatic device with a plurality of optical measurement channels and a chromatic lens allowing optical wavelengths of a broadband light source to be focused at different axial distances defining a chromatic measurement range. The method includes a step of obtaining an intensity information corresponding to the intensity of the light actually focused on an interface of the object within the chromatic measurement range at a plurality of measurement points on the object by measuring a total intensity over the full spectrum of the light collected by at least some of the optical measurement channels in a confocal configuration.

First claim

The invention claimed is:

1. A method for inspecting the surface of an object comprising tridimensional structures, using a confocal chromatic device with a plurality of optical measurement channels and a chromatic lens with a strong chromatic aberration allowing different optical wavelengths of a broadband light source to be respectively focused at different axial distances, said different axial distances defining a chromatic measurement range, the method comprising the steps of:
illuminating a plurality of measurement points on the surface of the object from the broadband light source through said chromatic lens, said measurement points being conjugate points, with respect to said chromatic lens, of collection apertures;
measuring a total intensity over the full spectrum of the light collected through said collection apertures on said illuminated measurement points by at least some of said optical measurement channels in a confocal configuration for obtaining an intensity information of the light focused on the surface of said object at the measurement points, so as to provide an intensity 2D image information of the surface and produce an image of the surface of said object with a high lateral resolution over a depth of focus extending over the chromatic measurement range;
locating a structure on the surface of said object using said intensity information to identify a measurement point of interest relative to said located structure; and
obtaining an axial distance information within said chromatic measurement range at said point of interest by measuring a spectral information of the light collected through said collection apertures by at least one of said optical measurement channels.

2. The method of claim 1 , further comprising at least one of the following steps:
identifying a measurement point of interest relative to a structure;
identifying a measurement point of interest relative to a structure corresponding to a summit of said structure.

3. The method of claim 2 , further comprising a step of deducing a height information of said structure.

4. The method of claim 1 , further comprising a step of moving relatively the object and the chromatic lens to position an optical measurement channel so as to obtain an axial distance information on a previously identified measurement point of interest.

5. The method of claim 1 , comprising a step of moving relatively the object and the chromatic lens along a pre-defined scan trajectory, and for a scan position:
obtaining an intensity information; and/or
obtaining an axial distance information on a measurement point of interest previously identified.

6. The method of claim 1 , further comprising at least one of the following steps:
changing a spacing of measurement points;
changing a spacing of measurement points by changing a scaling factor between a spatial repartition of collection apertures of the optical measurement channels and the measurement points using a magnifying lens.

7. The method of claim 6 , further comprising at least one of the following steps:
adjusting a spacing of measurement points taking into account a spatial repartition of structures on the object;
adjusting a spacing of measurement points so as to substantially match a spacing of structures on the object.

8. The method of claim 6 , further comprising at least one of the following steps:
obtaining an information on the spacing of structures using a-priori knowledge on the object;
obtaining an information on the spacing of structures using intensity information and/or axial distance information previously obtained.

9. The method of claim 6 , further comprising steps of:
obtaining an intensity information and/or an axial distance information at a plurality of measurement points with a first spacing of said measurement points, for locating sub-elements on the surface of the object;
obtaining an intensity information and/or an axial distance information at a plurality of measurement points with a second spacing of said measurement points finer than the first spacing on a sub-element.

10. The method of claim 1 , further comprising steps of:
building an intensity image by combining intensity information obtained in a region of interest of the object; and/or
building a height map by combining axial distance information obtained in a region of interest of the object.

11. The method of claim 1 , further comprising a step of comparing obtained axial distance information with reference value(s).

12. The method of claim 1 , which is implemented for inspecting tridimensional structures of at least one of the following type: bumps, micro-bumps, solder bumps, copper pillars, copper nails, Re-Distribution Layers (RDL), metal patterns.

Assignees

• Fogale Nanotech
• Unity Semiconductor

Inventors

• Fresquet Gilles
• Courteville Alain
• Gastaldo Philippe

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01N21/8806

  Specially adapted optical and illumination features · CPC title

• G01B2210/56

  Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth · CPC title

• G01N21/956

  Inspecting patterns on the surface of objects {(contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)} · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title