Scratch-resistant laminates with retained optical properties
US-2015376057-A1 · Dec 31, 2015 · US
US10239783B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10239783-B2 |
| Application number | US-201715730448-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 11, 2017 |
| Priority date | May 24, 2012 |
| Publication date | Mar 26, 2019 |
| Grant date | Mar 26, 2019 |
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A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm −1 to 3800 cm −1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.
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What is claimed is: 1. A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD, the method comprising: preparing the glass substrate; and forming the first layer on the glass substrate by the low-temperature CVD, wherein the first layer is formed on a surface of the glass substrate at a plasma power of 20 kW/m or higher, and wherein, in the glass substrate after said forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm −1 to 3800 cm −1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and a C content of the first layer is 1.64 at % or less. 2. The method as claimed in claim 1 , wherein said forming the first layer includes supplying the glass substrate with an organic metal precursor. 3. The method as claimed in claim 2 , wherein the organic metal precursor includes at least one component selected from the group consisting of Si, Ti, Zn, Sn and Al. 4. The method as claimed in claim 2 , wherein the organic metal precursor includes at least one component selected from the group consisting of a —CH 3 group, a —OH group and a —H group. 5. The method as claimed in claim 1 , wherein the first layer is at least one of oxide, nitride, and oxynitride. 6. The method as claimed in claim 1 , wherein said forming the first layer is performed at a deposition rate in a range of 50 nm·m/min to 400 nm·m/min. 7. The method as claimed in claim 1 , wherein the low-temperature CVD is PECVD. 8. The method as claimed in claim 1 , further comprising: forming a second layer over the glass substrate by a method other than the low-temperature CVD. 9. The method as claimed in claim 8 , wherein said forming the second layer is performed before or after said forming the first layer. 10. The method as claimed in claim 8 , further comprising: forming a third layer over the glass substrate by the low-temperature CVD after said forming the first layer. 11. The method as claimed in claim 10 , wherein, in the glass substrate after said forming the third layer, an integrated value after the baseline correction in the wavenumber range of 2600 cm −1 to 3800 cm −1 in a peak due to OH groups obtained by an FTIR measurement on the first through third layers is 9.0 or less. 12. The method as claimed in claim 8 , wherein the method other than the low-temperature CVD is sputtering or thermal CVD.
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