Method of producing glass substrate and glass substrate

US10239783B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10239783-B2
Application numberUS-201715730448-A
CountryUS
Kind codeB2
Filing dateOct 11, 2017
Priority dateMay 24, 2012
Publication dateMar 26, 2019
Grant dateMar 26, 2019

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm −1 to 3800 cm −1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD, the method comprising: preparing the glass substrate; and forming the first layer on the glass substrate by the low-temperature CVD, wherein the first layer is formed on a surface of the glass substrate at a plasma power of 20 kW/m or higher, and wherein, in the glass substrate after said forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm −1 to 3800 cm −1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and a C content of the first layer is 1.64 at % or less. 2. The method as claimed in claim 1 , wherein said forming the first layer includes supplying the glass substrate with an organic metal precursor. 3. The method as claimed in claim 2 , wherein the organic metal precursor includes at least one component selected from the group consisting of Si, Ti, Zn, Sn and Al. 4. The method as claimed in claim 2 , wherein the organic metal precursor includes at least one component selected from the group consisting of a —CH 3 group, a —OH group and a —H group. 5. The method as claimed in claim 1 , wherein the first layer is at least one of oxide, nitride, and oxynitride. 6. The method as claimed in claim 1 , wherein said forming the first layer is performed at a deposition rate in a range of 50 nm·m/min to 400 nm·m/min. 7. The method as claimed in claim 1 , wherein the low-temperature CVD is PECVD. 8. The method as claimed in claim 1 , further comprising: forming a second layer over the glass substrate by a method other than the low-temperature CVD. 9. The method as claimed in claim 8 , wherein said forming the second layer is performed before or after said forming the first layer. 10. The method as claimed in claim 8 , further comprising: forming a third layer over the glass substrate by the low-temperature CVD after said forming the first layer. 11. The method as claimed in claim 10 , wherein, in the glass substrate after said forming the third layer, an integrated value after the baseline correction in the wavenumber range of 2600 cm −1 to 3800 cm −1 in a peak due to OH groups obtained by an FTIR measurement on the first through third layers is 9.0 or less. 12. The method as claimed in claim 8 , wherein the method other than the low-temperature CVD is sputtering or thermal CVD.

Assignees

Inventors

Classifications

  • Anti-reflective coatings with specific characteristics · CPC title

  • at least one coating being a metal · CPC title

  • with at least two coatings of inorganic materials (C03C17/36, C03C17/42 take precedence) · CPC title

  • by cvd · CPC title

  • Anti-reflection coatings · CPC title

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What does patent US10239783B2 cover?
A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm −1 to 3800 cm −1 in a…
Who is the assignee on this patent?
Asahi Glass Co Ltd, Agc Inc
What technology area does this patent fall under?
Primary CPC classification C03C17/245. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 26 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).