Semiconductor pressure sensor and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-9395258-B2
Application number	US-201414154813-A
Country	US
Kind code	B2
Filing date	Jan 14, 2014
Priority date	Apr 26, 2013
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

At a pressure sensor region, a pressure sensor including a fixed electrode, a vacuum chamber and a movable electrode is formed at a pressure sensor region, whereas a memory cell transistor and a field effect transistor are formed at a MOS region. An etching hole communicating with the vacuum chamber is sealed by a first sealing film and the like. The vacuum chamber is formed by removing a portion of a film identical to the film of a gate electrode of the memory cell transistor.

First claim

What is claimed is:

1. A semiconductor pressure sensor comprising:
a first region and a second region defined at a surface of a semiconductor substrate,
a pressure sensor formed at said first region, and including a fixed electrode, a void, and a movable electrode, said void located above said fixed electrode, and said movable electrode located above said void,
a memory cell transistor formed at said second region, and including a first electrode and a second electrode formed of two different layers and arranged above said first electrode as a gate electrode,
an interlayer insulation film formed so as to cover said pressure sensor and said memory cell transistor,
a hole formed at said interlayer insulation film, communicating with said void,
a sealing portion sealing said void,
an opening formed at said interlayer insulation film, and exposing said movable electrode,
said fixed electrode formed of a film identical to a conductor film qualified as said first electrode,
said void formed by removing a portion from a film identical to another conductor film qualified as said second electrode such that the height of the void as measured in a direction perpendicular to said surface of the semiconductor substrate is essentially the same as the thickness of said second electrode and
said hole does not overlap said movable electrode in plan view and is not in direct contact with said movable electrode.

2. The semiconductor pressure sensor according to claim 1 , further comprising:
a first protection film covering a top face of said fixed electrode,
a second protection film covering a bottom face of said movable electrode,
a first insulation film located between said first electrode and said second electrode, and
a second insulation film formed between said second electrode and said interlayer insulation film, so as to cover said second electrode, wherein
said first protection film is formed of a portion of a film identical to a film qualified as said first insulation film,
said second protection film is formed of a portion of a film identical to a film qualified as said second insulation film.

3. The semiconductor pressure sensor according to claim 1 , further comprising:
a third insulation film formed so as to cover said interlayer insulation film, and
a passivation film formed so as to cover said third insulation film,
wherein said sealing portion includes
a first sealing portion formed of a portion of a film identical to a film qualified as said third insulation film, and
a second sealing portion formed of a portion of a film identical to a film qualified as said passivation film.

4. The semiconductor pressure sensor according to claim 1 , wherein said sealing portion includes a portion formed by a film of a type identical to the type of said interlayer insulation film.

5. The semiconductor pressure sensor according to claim 1 , wherein said pressure sensor comprises
a first pressure sensor including a first fixed electrode as said fixed electrode, a first void as said void, and a first movable electrode as said movable electrode, and
a second pressure sensor including a second fixed electrode as said fixed electrode, a second void as said void, and a second movable electrode as said movable electrode,
said opening formed at a region of said interlayer insulation film located above said first pressure sensor,
said second pressure sensor set at a state covered with said interlayer insulation film.

6. The semiconductor pressure sensor according to claim 1 , wherein a sidewall is located at a side of said void.

7. The semiconductor pressure sensor according to claim 1 , further comprising an element isolation insulation film formed at said first region,
wherein said pressure sensor is formed on said element isolation insulation film.

8. The semiconductor pressure sensor according to claim 1 , further comprising an element isolation insulation film formed at said first region,
wherein said pressure sensor is formed at a region of said semiconductor substrate defined by said element isolation insulation film.

9. The semiconductor pressure sensor according to claim 1 , wherein said sealing portion includes a portion formed from any of aluminium (Al), aluminium silicon (Al—Si), aluminium silicon copper (Al—Si—Cu), and aluminium copper (Al—Cu).

10. A semiconductor pressure sensor comprising:
a first region and a second region defined at a surface of a semiconductor substrate,
a pressure sensor formed at said first region, and including a fixed electrode, a void, and a movable electrode, said void located above said fixed electrode, and said movable electrode located above said void,
a transistor formed at said second region, and including a gate electrode,
an interlayer insulation film formed so as to cover said pressure sensor and said transistor,
a hole formed at said interlayer insulation film, communicating with said void,
a sealing portion sealing said void, and
an opening formed at said interlayer insulation film, and exposing said movable electrode,
said fixed electrode being a well region formed from a surface of said semiconductor substrate to a predetermined depth,
said void formed by removing a portion of a film identical to a conductor film formed of two different layers and qualified as said gate electrode such that the height of the void as measured in a direction perpendicular to said surface of the semiconductor substrate is essentially the same as the thickness of said second electrode and
said hole does not overlap said movable electrode in plan view and is not in direct contact with said movable electrode.

11. The semiconductor pressure sensor according to claim 1 , wherein said hole does not pass through said movable electrode.

Assignees

• Mitsubishi Electric Corp

Inventors

• Sato Kimitoshi

Classifications

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D84/40

  characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs · CPC title

• H10D48/50

  Devices controlled by mechanical forces, e.g. pressure · CPC title

• B81C2203/0742

  Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit · CPC title

• G01L9/0042

  Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively) · CPC title