Systematic defects inspection method with combined eBeam inspection and net tracing classification

Patent metadata

Field	Value
Publication number	US-10234500-B2
Application number	US-201514689088-A
Country	US
Kind code	B2
Filing date	Apr 17, 2015
Priority date	Apr 17, 2015
Publication date	Mar 19, 2019
Grant date	Mar 19, 2019

Abstract

A method and apparatus for separating real DVC via defects from nuisance based on Net Tracing Classification of eBeam VC die comparison inspection results are provided. Embodiments include performing an eBeam VC die comparison inspection on each via of a plurality of dies; determining DVC vias based on the comparison; performing a Net Tracing Classification on the DVC vias; determining S/D DVC vias based on the Net Tracing Classification; and performing a die repeater analysis on the S/D DVC vias to determine systematic design-related DVC via defects.

First claim

What is claimed is:

1. A method comprising:
performing an electron beam (eBeam) voltage contrast (VC) die comparison inspection on each via of a plurality of dies;
determining dark voltage contrast (DVC) vias based on the comparison;
performing net tracing on the DVC vias and classifying nuisance DVC vias;
filtering nuisance DVC vias post eBeam VC die-to-database (D2DB) inspection;
determining source/drain (S/D) DVC vias; and
performing a die repeater analysis on the S/D DVC vias to determine DVC via defects and improving eBeam inspection data accuracy for the plurality of dies by separating the DVC via defects from the nuisance DVC vias.

2. The method according to claim 1 , wherein the plurality of dies comprises three dies.

3. The method according to claim 1 , comprising performing the Net Tracing Classification based on an electrical connectivity of each DVC via to a S/D region, a gate, or a metal layer, respectively.

4. The method according to claim 1 , further comprising separating the DVC vias into S/D, gate, and floating via groups, respectively.

5. The method according to claim 1 , comprising performing the die repeater analysis by:
determining patterns of the S/D DVC vias in a same location on at least two dies of the plurality.

6. The method according to claim 1 , wherein the DVC via defects comprise un-landed S/D vias.

7. An apparatus comprising:
a processor; and
a memory including computer program code for one or more programs, the memory and the computer program code configured to, with the processor, cause the apparatus to:
perform an electron beam (eBeam) voltage contrast (VC) die comparison inspection on each via of a plurality of dies;
determine dark voltage contrast (DVC) vias based on the comparison;
perform net tracing on the DVC vias based on an electrical connectivity of each DVC via, and filtering nuisance DVC vias post eBeam VC die-to-database (D2DB) inspection;
determine source/drain (S/D) DVC vias; and
perform a die repeater analysis on the S/D DVC vias to determine systematic design-related DVC via defects and improving eBeam inspection data accuracy for the plurality of dies by separating the DVC via defects from the nuisance DVC vias.

8. The apparatus according to claim 7 , wherein the plurality of dies comprises three dies.

9. The apparatus according to claim 7 , wherein the apparatus is caused to:
perform the classification based on an electrical connectivity of each DVC via to a S/D region, a gate, or a metal layer, respectively.

10. The apparatus according to claim 7 , wherein the apparatus is further caused to:
separate the DVC vias into S/D, gate, and floating via groups, respectively.

11. The apparatus according to claim 7 , wherein the apparatus is caused, with respect to performing the die repeater analysis, to:
determine patterns of the S/D DVC vias in a same location on at least two dies of the plurality.

12. The apparatus according to claim 7 , wherein the apparatus is further caused to:
determine the DVC via defects based on the DVC vias being un-landed vias.

13. A method comprising:
performing an electron beam (eBeam) voltage contrast (VC) die-to-database (D2DB) inspection on each via of three dies;
determining dark voltage contrast (DVC) vias based on the D2DB inspection;
performing net tracing on the DVC vias and filtering nuisance DVC vias post eBeam VC D2DB inspection;
determining active region DVC vias; and
performing a die repeater analysis on the active region vias to determine systematic design-related DVC via defects and improving eBeam inspection data accuracy for the plurality of dies by separating the systematic design-related DVC via defects from the nuisance DVC vias.

14. The method according to claim 13 , comprising performing the net tracing based on an electrical connectivity of each DVC via to an active region, a gate, or a metal layer, respectively.

15. The method according to claim 13 , further comprising separating the DVC vias into active region, gate, and floating via groups, respectively, based on the Net Tracing Classification.

16. The method according to claim 13 , comprising performing the die repeater analysis by:
determining patterns of the active region DVC vias in a same location on at least two dies of the three dies.

Assignees

• Globalfoundries Inc

Inventors

• Gao Weihong
• Zeng Xuefeng
• Pan Yan
• Lin Peter
• Nguyen Hoang
• Song Ho Young

Classifications

• G01R31/305 Primary

  using electron beams {(investigating or analysing materials by measuring photoelectric effect G01N23/227)} · CPC title

• G01R31/307 Primary

  of integrated circuits · CPC title