Circuit inspection method and sample inspection apparatus

Patent metadata

Field	Value
Publication number	US-10712384-B2
Application number	US-201615756931-A
Country	US
Kind code	B2
Filing date	Jul 22, 2016
Priority date	Sep 2, 2015
Publication date	Jul 14, 2020
Grant date	Jul 14, 2020

Abstract

An object of the present invention relates to detecting a signal caused by a faulty point part of which the identification has been difficult with conventional EBAC. In an embodiment of the present invention, at least one probe is brought into contact with a sample on which a circuit is formed, the sample is scanned with a charged particle beam while power is supplied via the probe to the circuit identified by a contact of the probe, and a change in resistance value of a faulty point heated locally is measured via the probe. According to the present invention, even a signal caused by a high-resistance faulty point or a faulty point embedded in the sample can be easily detected.

First claim

The invention claimed is:

1. A circuit inspection method comprising:
bringing at least one probe into contact with a sample;
scanning the sample with a charged particle beam while power is supplied via the at least one probe to a circuit formed between a plurality of conductors of the sample by a contact of the at least one probe;
measuring a change in a resistance value of a faulty point heated locally via the at least one probe;
absorbing, by the at least one probe, a charged particle beam irradiated on the sample;
forming a charged particle beam absorption image on a basis of the absorbed charged particle beam; and
displaying the charged particle beam absorption image.

2. The circuit inspection method according to claim 1 , further comprising:
applying a constant voltage to a circuit formed between a plurality of conductors of the sample by a contact of the at least one probe to supply power to said circuit; and
measuring a change of end-to-end voltage over the faulty point upon heating to measure a change in the resistance value of the faulty point.

3. The circuit inspection method according to claim 1 , further comprising:
supplying a steady current to a circuit formed between a plurality of conductors of the sample by a contact of the at least one probe to supply power to said circuit; and
measuring a change of end-to-end voltage over the faulty point upon heating to measure a change in the resistance value of the faulty point.

4. The circuit inspection method according to claim 1 , further comprising:
time-differentiating a signal measured by the at least one probe to measure a change in the resistance value of the faulty point.

5. The circuit inspection method according to claim 1 , further comprising:
imaging a change in the resistance value of the faulty point in synchronization with the scanning of a charged particle beam.

6. The circuit inspection method according to claim 1 , further comprising:
detecting secondary particles generated with the irradiation of the charged particle beam to image surface information of a sample;
imaging a change in the resistance value of the faulty point in synchronization with the scanning of the charged particle beam; and
superimposing an image according to the change in the resistance value of the faulty point on an image of the surface information to identify a position of the faulty point.

7. A sample inspection apparatus comprising:
a sample stage with a sample mounted thereon;
a charged particle beam irradiation system that irradiates the sample with a charged particle beam;
at least one probe that is brought into contact with the sample, and for absorbing a charged particle beam irradiated on the sample;
a power supply that supplies power via the at least one probe to a circuit formed between a plurality of conductors of the sample by a contact of the at least one probe;
a measurement unit that measures a change in the resistance value of a faulty point heated locally using a charged particle optical system, while the power supply supplies power to the circuit identified by the contact of the at least one probe;
a formation unit that forms a charged particle beam absorption image on the basis of a charged particle beam absorbed by the at least one probe; and
a displaying unit that displays the charged particle beam absorption image.

8. The sample inspection apparatus according to claim 7 ,
wherein the measurement unit applies a constant voltage to a circuit formed between a plurality of conductors of the sample by a contact of the at least one probe to supply power to said circuit, and measures a change of end-to-end voltage over the faulty point upon heating to measure a change in the resistance value of the faulty point.

9. The sample inspection apparatus according to claim 7 ,
wherein the measurement unit supplies a steady current to a circuit formed between a plurality of conductors of the sample by a contact of the at least one probe to supply power to said circuit, and measures a change of end-to-end voltage over the faulty point upon heating to measure a change in the resistance value of the faulty point.

10. The sample inspection apparatus according to claim 7 ,
wherein the measurement unit time-differentiates a signal measured by the at least one probe to measure a change in the resistance value of the faulty point.

11. The sample inspection apparatus according to claim 7 ,
wherein the formation unit images a change in the resistance value of the faulty point in synchronization with the scanning of a charged particle beam.

12. The sample inspection apparatus according to claim 7 ,
wherein the formation unit detects secondary particles generated with the irradiation of the charged particle beam to image surface information of a sample, and images a change in the resistance value of the faulty point in synchronization with the scanning of the charged particle beam, and
wherein the display unit superimposes an image according to the change in the resistance value of the faulty point on an image of the surface information.

13. The sample inspection apparatus according to claim 7 ,
wherein said at least one probe comprises a first probe and a second probe, and
wherein said sample inspection apparatus further comprises
an electron source;
a power supply;
a first resistor connected to the power supply and to the first probe;
a second resistor connected to the second probe;
a differential amplifier;
a first capacitor provided between a first input of the differential amplifier and a path connecting the first resistor with the first probe; and
a second capacitor provided between a second input of the differential amplifier and a path connecting the second resistor with the second probe.

14. The sample inspection apparatus according to claim 13 ,
wherein the second probe is connected to the sample stage.

15. The sample inspection apparatus according to claim 13 ,
wherein at least one of the first probe and the second probe is irradiated with an electron beam from the electron source.

Assignees

• Hitachi High Tech Corp

Inventors

• Kageyama Akira
• Nara Yasuhiko

Classifications

• H01J37/268

  with scanning beams · CPC title

• G01R31/2836

  Fault-finding or characterising (G01R31/2822 - G01R31/2831 take precedence) · CPC title

• G01R27/08

  Measuring resistance by measuring both voltage and current · CPC title

• G01R27/02

  Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant (by measuring phase angle only G01R25/00) · CPC title

• G01R31/305 Primary

  using electron beams {(investigating or analysing materials by measuring photoelectric effect G01N23/227)} · CPC title