Manufacturing method of monocrystalline silicon and monocrystalline silicon

Patent metadata

Field	Value
Publication number	US-10233564-B2
Application number	US-201715722051-A
Country	US
Kind code	B2
Filing date	Oct 2, 2017
Priority date	Oct 3, 2016
Publication date	Mar 19, 2019
Grant date	Mar 19, 2019

Abstract

A smonocrystalline silicon include a straight body formed without generating a remelt growth area of 200 μm or more in a height in a growth direction. Growth striations, which are formed radially across the straight body, include a growth striation with an outer end interrupted by another growth striation not to reach a peripheral portion of the straight body. The remelt growth area has the growth striation with the interrupted outer end.

First claim

What is claimed is:

1. A manufacturing method of a monocrystalline silicon according to a Czochralski process with use of a monocrystal pull-up apparatus, the apparatus comprising:
a chamber;
a crucible located in the chamber;
a heater configured to heat the crucible to produce a dopant-added melt comprising a silicon melt and a dopant added to the silicon melt; and
a pull-up unit configured to pull up a seed crystal after bringing the seed crystal into contact with the dopant-added melt, the method comprising forming a straight body of the monocrystalline silicon without generating a remelt growth area of 200 μm or more in a height in a growth direction, the straight body having growth striations formed radially across the straight body, the growth striations comprising a growth striation with an outer end interrupted by another growth striation not to reach a peripheral portion of the straight body, the remelt growth area comprising the growth striation with the interrupted outer end.

2. A manufacturing method of a monocrystalline silicon according to a Czochralski process with use of a monocrystal pull-up apparatus, the apparatus comprising:
a chamber;
a crucible located in the chamber;
a heater configured to heat the crucible to produce a dopant-added melt comprising a silicon melt and red phosphorus or arsenic added as a dopant to the silicon melt; and
a pull-up unit configured to pull up a seed crystal after bringing the seed crystal into contact with the dopant-added melt, the method comprising forming a straight body, a target diameter of which is 200 mm or more, of the monocrystalline silicon,
wherein:
the crucible is rotated at 9 rpm or more at a start of the forming of the straight body, and
a rotation speed of the crucible is slowed at a predetermined timing after the start of the forming of the straight body.

3. The manufacturing method according to claim 2 , wherein arsenic is used as the dopant to form the straight body with the target diameter of 300 mm and an electrical resistivity ranging from 1.6 mΩ·cm to 2.8 mΩ·cm.

4. The manufacturing method according to claim 2 , wherein red phosphorus is used as the dopant to form the straight body with the target diameter of 300 mm and an electrical resistivity ranging from 0.7 mΩ·cm to 1.5 mΩ·cm.

5. The manufacturing method according to claim 2 , wherein
the monocrystal pull-up apparatus further comprises an electromagnetic coil configured to apply a magnetic field to the dopant-added melt, and
the straight body is formed while the magnetic field is applied to the dopant-added melt.

6. A monocrystalline silicon comprising a straight body that comprises arsenic as a dopant, wherein
growth striations are formed radially across the straight body, the growth striations comprising a growth striation with an outer end interrupted by another growth striation not to reach a peripheral portion of the straight body,
no remelt growth area, which comprises the growth striation with the interrupted outer end, with a height of 200 μm or more in a growth direction exists,
a target diameter of the straight body is 200 mm, and
an electrical resistivity of the straight body ranges from 1.4 mΩ·cm to 2.4 mΩ·cm.

7. A monocrystalline silicon comprising a straight body that comprises arsenic as a dopant, wherein
growth striations are formed radially across the straight body, the growth striations comprising a growth striation with an outer end interrupted by another growth striation not to reach a peripheral portion of the straight body,
no remelt growth area, which comprises the growth striation with the interrupted outer end, with a height of 200 Ωm or more in a growth direction exists,
a target diameter of the straight body is 300 mm, and
an electrical resistivity of the straight body ranges from 1.6 mΩ·cm to 2.8 mΩ·cm.

8. A monocrystalline silicon comprising a straight body that comprises red phosphorus as a dopant, wherein
growth striations are formed radially across the straight body, the growth striations comprising a growth striation with an outer end interrupted by another growth striation not to reach a peripheral portion of the straight body,
no remelt growth area, which comprises the growth striation with the interrupted outer end, with a height of 200 μm or more in a growth direction exists,
a target diameter of the straight body is 200 mm, and
an electrical resistivity of the straight body ranges from 0.6 mΩ·cm to 1.2 mΩ·cm.

9. A monocrystalline silicon comprising a straight body that comprises red phosphorus as a dopant, wherein
growth striations are formed radially across the straight body, the growth striations comprising a growth striation with an outer end interrupted by another growth striation not to reach a peripheral portion of the straight body,
no remelt growth area, which comprises the growth striation with the interrupted outer end, with a height of 200 μm or more in a growth direction exists,
a target diameter of the straight body is 300 mm, and
an electrical resistivity of the straight body ranges from 0.7 mΩ·cm to 1.5 mΩ·cm.

Assignees

• Sumco Corp

Inventors

• Narushima Yasuhito
• Kawazoe Shinichi
• Ogawa Fukuo

Classifications

• C30B15/22 Primary

  Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal · CPC title

• C30B15/30

  Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B15/28) · CPC title

• C30B29/06

  Silicon · CPC title

• C30B15/04

  adding doping materials, e.g. for n-p-junction · CPC title