Impedance transformation circuit for amplifier

Patent metadata

Field	Value
Publication number	US-10230337-B2
Application number	US-201715788454-A
Country	US
Kind code	B2
Filing date	Oct 19, 2017
Priority date	Dec 30, 2015
Publication date	Mar 12, 2019
Grant date	Mar 12, 2019

Abstract

Aspects of this disclosure relate to an impedance transformation circuit for use in an amplifier, such as a low noise amplifier. The impedance transformation circuit includes a matching circuit including a first inductor. The impedance transformation circuit also includes a second inductor. The first and second inductors are magnetically coupled to each other to provide negative feedback to linearize the amplifier.

First claim

What is claimed is:

1. A method of radio frequency signal amplification with a low noise amplifier, the method comprising:
providing a radio frequency signal to an amplification circuit of the low noise amplifier by way of a first inductor and a series inductor, the first inductor and the series inductor being arranged in series with each other;
applying, with a bias circuit, a bias signal to a node between the first inductor and the series inductor;
amplifying the radio frequency signal with the amplification circuit of the low noise amplifier; and
providing negative feedback to linearize the amplification circuit with a second inductor magnetically coupled to the first inductor.

2. The method of claim 1 further comprising blocking a direct current component of the radio frequency signal with a capacitor, the first inductor and the series inductor being in a signal path from the capacitor and the amplification circuit.

3. The method of claim 1 wherein the amplification circuit includes a bipolar transistor that includes an emitter connected to the second inductor.

4. The method of claim 1 wherein the amplification circuit includes a field effect transistor that includes a source connected to the second inductor.

5. The method of claim 1 wherein the amplification circuit includes a cascode transistor in series with a second transistor, and the second transistor is arranged as either a common source amplifier or a common emitter amplifier.

6. A low noise amplifier system comprising:
a matching circuit including a first inductor and a series inductor arranged in series with each other;
a bias circuit configured to apply a bias signal at a node between the first inductor and the series inductor;
an amplification circuit configured to receive the radio frequency signal by way of the first inductor and the series inductor; and
a second inductor magnetically coupled to the first inductor to provide negative feedback to linearize the amplification circuit.

7. The low noise amplifier system of claim 6 wherein the first inductor and the second inductor are interleaved with each other in physical layout.

8. The low noise amplifier system of claim 6 wherein the first inductor includes annular turns.

9. The low noise amplifier system of claim 6 wherein the first inductor and the series inductor are non-concentric in physical layout.

10. The low noise amplifier system of claim 6 wherein the first inductor includes portions in two metal layers and conductive connections between the portions of the first inductor in the two metal layers.

11. The low noise amplifier system of claim 6 wherein the matching circuit, the amplification circuit, and the second inductor are on a common semiconductor-on-insulator die.

12. The low noise amplifier system of claim 6 wherein the matching circuit includes a capacitor configured to provide the radio frequency signal to the amplification circuit by way of the series inductor and the first inductor.

13. A wireless communication device comprising:
a low noise amplifier system including a matching circuit that includes a first inductor arranged in series with a series inductor, a bias circuit configured to apply a bias signal at a node between the first inductor and the series inductor, an amplification circuit configured to receive a radio frequency signal by way of the first inductor and the series inductor, and a second inductor magnetically coupled to the first inductor to provide negative feedback to linearize the amplification circuit; and
an antenna operatively coupled to the low noise amplifier system, the antenna configured to receive the radio frequency signal.

14. The wireless communication device of claim 13 comprising a wireless personal area network system, the low noise amplifier system being included in the wireless personal area network system, and the radio frequency signal being a wireless personal area network signal.

15. The wireless communication device of claim 13 comprising a wireless local area network system, the low noise amplifier system being included in the wireless local area network system, and the radio frequency signal being a wireless local area network signal.

16. The wireless communication device of claim 13 wherein the matching circuit, the amplification circuit, and the second inductor are on a common silicon-on-insulator die.

17. The wireless communication device of claim 13 wherein the matching circuit includes a capacitor configured to provide the radio frequency signal to the amplification circuit by way of the series inductor and the first inductor.

18. The wireless communication device of claim 13 wherein the first inductor and the series inductor are non-concentric in physical layout.

19. The wireless communication device of claim 13 further comprising a multi-throw radio frequency switch and a bypass path, the low noise amplifier system and the bypass path being coupled to different throws of the multi-throw radio frequency switch.

20. The method of claim 1 further comprising electrically connecting an antenna to the series inductor using a multi-throw switch.

Assignees

• Skyworks Solutions Inc

Inventors

• Wallis Leslie Paul

Classifications

• H03F3/213

  in integrated circuits · CPC title

• H03F2200/387

  A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier · CPC title

• H03F3/245

  with semiconductor devices only · CPC title

• H03F1/342

  in field-effect transistor amplifiers · CPC title

• H03F2200/294

  the amplifier being a low noise amplifier [LNA] · CPC title