Photonic degradation monitoring for semiconductor devices

Patent metadata

Field	Value
Publication number	US-10230329-B2
Application number	US-201715425709-A
Country	US
Kind code	B2
Filing date	Feb 6, 2017
Priority date	May 6, 2015
Publication date	Mar 12, 2019
Grant date	Mar 12, 2019

Abstract

Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

First claim

What is claimed is:

1. A solar cell testing apparatus, comprising:
a narrowband light source configured to induce photonic degradation to a solar cell, wherein the inducing includes applying light to the solar cell;
a detector configured to measure photoluminescence induced from the applied light; and
an electronic system configured to monitor the photonic degradation of the solar cell from the photoluminescence measurement, wherein the electronic system is configured to characterize a solar cell based on the monitoring.

2. The solar cell testing apparatus of claim 1 , wherein the detector is configured to measure photoluminescence induced from the applied light from the back side of the solar cell.

3. The solar cell testing apparatus of claim 1 , wherein the narrowband light source is a laser or a light emitting diode (LED).

4. The solar cell testing apparatus of claim 1 , wherein light from the narrowband light source and the measured photoluminescence are at least partially co-axial.

5. The solar cell testing apparatus of claim 1 , further comprising a dichroic mirror to separate between the light from the narrowband light source and the measured photoluminescence.

6. The solar cell testing apparatus of claim 1 , wherein the narrowband light source is an ultraviolet (UV) light source.

7. A solar cell testing apparatus, comprising:
a narrowband light source configured to induce photonic degradation to a solar cell, wherein the inducing includes applying light to the solar cell;
a detector configured to measure photoluminescence induced from the applied light; and
an electronic system configured to monitor the photonic degradation of the solar cell from the photoluminescence measurement, wherein the electronic system is configured to quantify or qualify a solar cell based on the monitoring.

8. The solar cell testing apparatus of claim 7 , wherein the narrowband light source is a laser or a light emitting diode (LED).

9. The solar cell testing apparatus of claim 7 , wherein light from the narrowband light source and the measured photoluminescence are at least partially co-axial.

10. The solar cell testing apparatus of claim 7 , further comprising a dichroic mirror to separate between the light from the narrowband light source and the measured photoluminescence.

11. The solar cell testing apparatus of claim 7 , wherein the narrowband light source is an ultraviolet (UV) light source.

12. A method for testing a solar cell, the method comprising:
inducing photonic degradation, wherein the inducing includes applying light to the solar cell; and
monitoring the photonic degradation of the solar cell based on a photoluminescence measurement, wherein the monitoring includes receiving a first photoluminescence measurement induced from the applied light and receiving a second photoluminescence measurement induced from the applied light during the first photoluminescence measurement.

13. The method of claim 12 , wherein applying light to the solar cell comprises applying light having a photon energy above the bandgap energy of the semiconductor substrate of the solar cell.

14. The method of claim 12 , wherein applying light to the solar cell comprises applying light from a narrowband light source.

15. The method of claim 14 , wherein applying light from a narrowband light source to the solar cell comprises applying light from a narrowband light source having a wavelength in the range of 100-1000 nm to the solar cell.

16. The method of claim 12 , wherein applying light to the solar cell comprises applying light to a passivation region of the solar cell.

17. The method of claim 12 , wherein applying light to the solar cell comprises applying light to a location on a front side of the solar cell opposite a contact pad on back side of the solar cell.

18. The method of claim 12 , further comprising:
inducing photonic degradation, wherein the inducing includes applying light to a plurality of locations of the solar cell; and
monitoring the induced photonic degradation to the solar cell based on a photonic degradation map, wherein the monitoring includes receiving a plurality of photoluminescence measurements induced from the applied light and mapping the induced photonic degradation at the plurality of locations of the solar cell to the photonic degradation map.

19. The method of claim 12 , wherein applying light to the solar cell comprises applying light to the solar cell for a duration in the range of 10 milliseconds-2 hours.

20. The method of claim 12 , wherein applying light to the solar cell comprises applying light from a laser or a light emitting diode (LED) to the solar cell.

Assignees

• Sunpower Corp

Inventors

• Tu Xiuwen
• Soltz David Aitan
• Johnson Michael C
• Rim Seung Bum
• Qiu Taiqing
• Shen Yu-Chen
• Tracy Kieran Mark

Classifications

• G01N21/6408

  with measurement of decay time, time resolved fluorescence · CPC title

• G01N21/6489

  Photoluminescence of semiconductors · CPC title

• H02S50/15 Primary

  using optical means, e.g. using electroluminescence · CPC title

• G01N2201/06113

  Coherent sources; lasers · CPC title

• G01N2201/0621

  Supply · CPC title