Polymer for preparing resist underlayer film, resist underlayer film composition containing the polymer and method for manufacturing semiconductor device using the composition

Patent metadata

Field	Value
Publication number	US-10227450-B2
Application number	US-201615207888-A
Country	US
Kind code	B2
Filing date	Jul 12, 2016
Priority date	Jul 13, 2015
Publication date	Mar 12, 2019
Grant date	Mar 12, 2019

Abstract

Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity and planarization characteristics, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.

First claim

What is claimed is:

1. A resist underlayer film composition comprising:
a polymer for preparing a resist underlayer film including a repeating unit represented by Chemical Formula 1 below;
an organic solvent; and
a crosslinking agent comprising at least one selected from compounds represented by Chemical Formulas 4 to 10 below:

in Chemical Formula 1,
Ar is (C10-C100)arylene, wherein the arylene of Ar may be further substituted with one or more substituents selected from the group consisting of (C1-C20)alkyl, (C3-C20)cycloalkyl, (C2-C20)alkenyl, (C3-C20)cycloalkenyl, (C2-C20)alkynyl, 4- to 10-membered heterocycloalkyl, (C6-C20)aryl, (C3-C20)heteroaryl, halogen, cyano, hydroxy, (C1-C20)alkoxy, (C3-C20)cycloalkoxy, (C6-C20)aryloxy, (C1-C20)alkylthio, (C3-C20)cycloalkylthio, (C6-C20)arylthio, (C1-C20)alkylcarbonyl, (C2-C20)alkenylcarbonyl, (C6-C20)arylcarbonyl, (C3-C20)cycloalkylcarbonyl, and (C3-C20)cycloalkenylcarbonyl;
L is

Ar 1 and Ar 2 are each independently (C6-C30)arylene;
Ar 3 is a trivalent (C6-C30)arylene;
Ar 4 is (C6-C30)aryl;
the arylene of Ar 1 , Ar 2 and Ar 3 , and the aryl of Ar 4 may be further substituted with one or more substituents selected from the group consisting of (C1-C10)alkyl, (C3-C10)cycloalkyl, (C6-C20)aryl, (C1-C10)alkoxy, (C6-C20)aryloxy, (C1-C10)alkyl(C6-C20)aryl and (C6-C20)aryl(C1-C10)alkyl,
R is (C1-C20)alkyl or (C3-C10)cycloalkyl, and the alkyl or cycloalkyl of R may be further substituted with one or more substituents selected from the group consisting of (C1-C10)alkyl, (C3-C10)cycloalkyl and (C6-C20)aryl;
w is an integer of 1 to 5; and
the heteroaryl and the heterocycloalkyl include one or more heteroatoms selected from B, N, O, S, P(═O), Si, Se and P,

in Chemical Formula 6, R 21 and R 22 are each independently hydroxy or (C1-C3)alkoxy, and R 23 is (C1-C10)alkyl,

in Chemical Formula 8, R 24 , R 25 , R 26 and R 27 are each independently hydroxy or (C1-C3)alkoxy, and R 28 and R 29 are each independently hydrogen, (C1-C10)alkyl or halo(C1-C10)alkyl,

in Chemical Formula 9, R 30 , R 31 , R 32 and R 33 are each independently hydroxy or (C1-C3)alkoxy,

in Chemical Formula 10, R 34 , R 35 , R 36 , R 37 , R 38 and R 39 are each independently hydroxy or (C1-C3)alkoxy.

2. The resist underlayer film composition of claim 1 , wherein the polymer for preparing a resist underlayer film includes a repeating unit represented by Chemical Formula 2 or 3 below:

in Chemical Formula 2 or 3, Ar 1 , Ar 2 , Ar 3 , Ar 4 , R and w are the same as defined in Chemical Formula 1 above of claim 1 ;
Ar 11 , Ar 12 , Y and Z are each independently (C6-C20)arylene;
the arylene of Ar 11 and Ar 12 may be further substituted with one or more substituents selected from the group consisting of (C1-C20)alkyl, hydroxy, (C1-C20)alkoxy, and (C6-C20)aryl, and
the arylene of Y and Z may be further substituted with one or more substituents selected from the group consisting of (C1-C10)alkyl, (C3-C10)cycloalkyl, (C2-C10)alkenyl, (C3-C10)cycloalkenyl, (C2-C10)alkynyl, 4- to 10-membered heterocycloalkyl, (C6-C20)aryl, (C3-C20)heteroaryl, halogen, cyano, (C1-C10)alkoxy, (C3-C10)cycloalkoxy, (C6-C20)aryloxy, (C1-C10)alkylthio, (C3-C10)cycloalkylthio, (C6-C20)arylthio, (C1-C10)alkylcarbonyl, (C2-C10)alkenylcarbonyl, (C6-C20)arylcarbonyl, (C3-C10)cycloalkylcarbonyl, and (C3-C10)cycloalkenylcarbonyl.

3. The resist underlayer film composition of claim 1 , wherein the polymer for preparing a resist underlayer film including the repeating unit represented by Chemical Formula 1 has an amount of 0.5 to 50 wt % and the organic solvent has an amount of 50 to 99.5 wt %, based on total amount of the resist underlayer film composition.

4. The resist underlayer film composition of claim 1 , wherein the organic solvent is at least one selected from cyclohexanone, 2-heptanone, propyleneglycol monomethyl ether, propyleneglycol monomethyl acetate, propyleneglycol monomethyl ether acetate, gamma-butyrolactone, ethyl lactate, dimethyl sulfoxide, dimethyl acetamide, and N-methyl pyrrolidone.

5. The resist underlayer film composition of claim 1 , further comprising at least one additive selected from acid catalysts, acid generators, antifoaming agents, and surfactants.

6. The resist underlayer film composition of claim 5 , wherein the acid catalyst or the acid generator is at least one selected from compounds represented by Chemical Formulas 11 to 16 below:

7. A method for manufacturing semiconductor device comprising:
1) forming a resist underlayer film by applying and heating the resist underlayer film composition of claim 1 on a substrate;
2) forming a photoresist film on the resist underlayer film of step 1);
3) forming photoresist patterns by exposing and developing the photoresist film of step 2);
4) etching the resist underlayer film by using the photoresist patterns of step 3) as an etching mask to thereby expose the substrate in a form of the patterns; and
5) etching an exposed part of the substrate,
wherein the exposing is performed by using at least one selected from the group consisting of an excimer laser scanner, electron beam, X-ray, and ion beam, and
wherein the development is performed by using an alkaline aqueous solution.

8. The method for manufacturing semiconductor device of claim 7 , further comprising, before step 2), forming an inorganic resist underlayer film or a bottom anti-refractive coating (BARC) film on the resist underlayer film of step 1).

9. The method for manufacturing semiconductor device of claim 7 , wherein in the forming of the photoresist patterns of step 3), heating is performed before and/or after the exposing, respectively.

10. A polymer for preparing a resist underlayer film comprising:
a repeating unit represented by Chemical Formula 2 or 3 below:

in Chemical Formula 2 or 3

is selected from the following structures:

R 1 and R 2 are hydroxy;
R 3 and R 4 are each independently hydrogen, (C1-C10)alkyl, (C3-C10)cycloalkyl, (C2-C10)alkenyl, (C3-C10)cycloalkenyl, (C2-C10)alkynyl, 4- to 10-membered heterocycloalkyl, (C6-C20)aryl, (C3-C20)heteroaryl, halogen, cyano, (C1-C10)alkoxy, (C3-C10)cycloalkoxy, (C6-C20) aryloxy, (C1-C10)alkylthio, (C3-C10)cycloalkylthio, (C6-C20) arylthio, (C1-C10)alkylcarbonyl, (C2-C10)alkenylcarbonyl, (C6-C20)arylcarbonyl, (C3-C10)cycloalkylcarbonyl, or (C3-C10)cycl

Assignees

• Sk Innovation Co Ltd
• Sk Global Chemical Co Ltd

Inventors

• Jung Min Ho
• Shim Yu Na
• Lee Kyun Phyo
• Ham Jin Su
• Hwang Soo Young

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/2042

  using lasers · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• C08G65/48

  Polymers modified by chemical after-treatment · CPC title

• G03F7/091

  characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title