Semiconductor device and wafer level package including such semiconductor device

Patent metadata

Field	Value
Publication number	US-10224287-B2
Application number	US-201715613144-A
Country	US
Kind code	B2
Filing date	Jun 3, 2017
Priority date	Mar 20, 2015
Publication date	Mar 5, 2019
Grant date	Mar 5, 2019

Abstract

An RDL structure on a passivation layer includes a first landing pad disposed directly above a first on-chip metal pad; a first via in a passivation layer to electrically connect the first landing pad with the first on-chip metal pad; a second landing pad disposed directly above the second on-chip metal pad; a second via in the passivation layer to electrically connect the second landing pad with the second on-chip metal pad; and at least five traces being disposed on the passivation layer and passing through a space between the first landing pad and the second landing pad.

First claim

What is claimed is:

1. A semiconductor device, comprising:
an integrated circuit (IC) die having an active surface, wherein at least a first on-chip metal pad and a second on-chip metal pad are disposed on the active surface;
a passivation layer on the active surface and covering the first on-chip metal pad and the second on-chip metal pad;
and a redistribution layer (RDL) structure on the passivation layer, the RDL structure comprising:
a first conductive pillar bump disposed under the first on-chip metal pad;
a first landing pad disposed under the first conductive pillar bump;
a first via in the RDL structure to contact the first conductive pillar bump and electrically connect the first landing pad with the first on-chip metal pad;
a second conductive pillar bump disposed under the second on-chip metal pad;
a second landing pad disposed under the second conductive bump;
a second via in the RDL structure to contact the second conductive pillar bump and electrically connect the second landing pad with the second on-chip metal pad, wherein each of the first landing pad, the second landing pad, the first via and the second via has an oval shape when viewed from the above; and
at least three traces being disposed on the RDL structure and passing through a space between the first landing pad and the second landing pad, wherein the at least three traces comprise two intervening reference traces between three high-speed signal traces to thereby form a SGSGS RDL trace configuration.

2. The semiconductor device according to claim 1 , wherein the first on-chip metal pad is an aluminum pad.

3. The semiconductor device according to claim 2 , wherein the second on-chip metal pad is an aluminum pad.

4. The semiconductor device according to claim 1 , wherein the passivation layer comprises silicon oxide, silicon nitride, silicon oxynitride, undoped silicon glass, or any combination thereof.

5. The semiconductor device according to claim 1 , wherein the first landing pad and the first via are composed of copper.

6. The semiconductor device according to claim 5 , wherein the second landing pad and the second via are composed of copper.

7. The semiconductor device according to claim 1 , wherein the high-speed signal traces are operated greater than 1 Gb/s.

8. The semiconductor device according to claim 1 , wherein the two intervening reference traces transmit a ground signal.

9. The semiconductor device according to claim 1 , wherein the at least three traces comprise two intervening reference traces around one signal traces to thereby form a GSG RDL trace configuration.

10. The semiconductor device according to claim 1 , wherein the first landing pad and the second landing pad both have an aspect ratio ranging between 1˜3.

11. The semiconductor device according to claim 1 , wherein at least four aluminum traces extending along a die-to-die direction are disposed between the first on-chip metal pad and the second on-chip metal pad.

12. A semiconductor package, comprising:
an integrated circuit (IC) die having an active surface, wherein at least a first on-chip metal pad and a second on-chip metal pad in close proximity to the first on-chip metal pad are disposed on the active surface;
a passivation layer on the active surface and covering the first on-chip metal pad and the second on-chip metal pad;
a molding compound encapsulating the IC die except for the active surface; and a redistribution layer (RDL) structure on the passivation layer and on the molding compound, the RDL structure comprising:
a first landing pad disposed directly above the first on-chip metal pad;
a first via in the RDL structure to electrically connect the first landing pad with the first on-chip metal pad;
a second landing pad being disposed directly above the second on-chip metal pad;
a second via in the RDL structure to electrically connect the second landing pad with the second on-chip metal pad; and
at least three traces being disposed on the RDL structure and passing through a space between the landing pad and the second landing pad, wherein the first landing pad and the second landing pad have a longitudinal length L1 and a width W1, and an aspect ratio defined as L1/W1 ranges between 1˜3.

13. The semiconductor package according to claim 12 , wherein the first on-chip metal pad and on-chip metal pad are aluminum pads.

14. The semiconductor package according to claim 12 , wherein the passivation layer comprises silicon oxide, silicon nitride, silicon oxynitride, undoped silicon glass, or any combination thereof.

15. The semiconductor package according to claim 12 , wherein the first landing pad, the first via, the second landing pad and the second via are composed of copper.

16. The semiconductor package according to claim 12 , wherein the at least three traces comprise two intervening reference traces around one signal traces to thereby form a GSG RDL trace configuration.

17. The semiconductor device according to claim 1 , wherein the first conductive pillar bump and/or second conductive pillar bump are copper.

Assignees

• Mediatek Inc

Inventors

• Syu Shih-Yi
• Hsieh Tung-Hsien
• Chou Che-Ya

Classifications

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title

• H10W72/853

  On the same surface · CPC title

• H10W72/942

  relative to underlying supporting features, e.g. bond pads, RDLs or vias · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title