Carbon paste and solid electrolytic capacitor element
US-2015371785-A1 · Dec 24, 2015 · US
US10224150B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10224150-B2 |
| Application number | US-201615013171-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 2, 2016 |
| Priority date | Feb 2, 2016 |
| Publication date | Mar 5, 2019 |
| Grant date | Mar 5, 2019 |
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An improved capacitor is provided. The capacitor comprises an anode and a functional dielectric on said anode and a conductive layer on the functional dielectric. An anode wire extends from said anode wherein the anode wire has a thickened dielectric layer thereon.
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The invention claimed is: 1. A capacitor comprising: an anode; a functional dielectric on said anode; a conductive layer on said functional dielectric; an anode wire extending from said anode wherein said anode wire has a thickened dielectric region thereon; and wherein said thickened dielectric region has a thickness of at least 1.1-10.0 times the thickness of said functional dielectric. 2. The capacitor of claim 1 wherein said anode comprises a valve metal or a conductive oxide of a valve metal. 3. The capacitor of claim 2 wherein said anode comprises a valve metal selected from the group consisting of tantalum, aluminum, niobium, titanium, zirconium and hafnium. 4. The capacitor of claim 1 wherein said thickened dielectric region has a thickness of at least 2-8 times the thickness of said functional dielectric. 5. The capacitor of claim 1 wherein said functional dielectric is an oxide of said anode. 6. The capacitor of claim 1 wherein said conductive layer comprises a conductive polymer. 7. The capacitor of claim 6 wherein said conductive polymer is selected from the group consisting of polythiophene, polypyrrole and polyaniline. 8. The capacitor of claim 7 wherein said conductive polymer comprises polymerized 3,4-ethylenedioxythiophene. 9. The capacitor of claim 6 further comprising a blocking polymer on said thickened dielectric. 10. The capacitor of claim 9 wherein said blocking polymer has lower conductivity than said conductive polymer. 11. A method for forming a capacitor comprising: pressing and sintering a metal to form an anode with an anode wire extending therefrom; forming a functional dielectric on said anode; forming a conductive layer on said functional dielectric; forming a thickened dielectric region on said anode wire; and cleaning said anode wire prior to said forming said thickened dielectric region. 12. The method for forming a capacitor of claim 11 further comprising applying a blocking polymer on said thickened dielectric. 13. The method for forming a capacitor of claim 12 wherein said blocking polymer has a lower conductivity than said conductive layer. 14. The method for forming a capacitor of claim 11 wherein said anode comprises a valve metal or a conductive oxide of a valve metal. 15. The method for forming a capacitor of claim 14 wherein said anode comprises a valve metal selected from the group consisting of tantalum, aluminum, niobium, titanium, zirconium and hafnium. 16. The method for forming a capacitor of claim 11 wherein said thickened dielectric region has a thickness of at least 1.1-10.0 times the thickness of said functional dielectric. 17. The method for forming a capacitor of claim 16 wherein said thickened dielectric region has a thickness of at least 2-8 times the thickness of said functional dielectric. 18. The method for forming a capacitor of claim 11 wherein said functional dielectric is an oxide of said anode. 19. The method for forming a capacitor of claim 11 wherein said conductive layer comprises a conductive polymer. 20. The method for forming a capacitor of claim 19 wherein said conductive polymer is selected from the group consisting of polythiophene, polypyrrole and polyaniline. 21. The method for forming a capacitor of claim 20 wherein said conductive polymer comprises polymerized 3,4-ethylenedioxythiophene. 22. The method for forming a capacitor of claim 11 further comprising a blocking polymer on said thickened dielectric. 23. The method for forming a capacitor of claim 22 wherein said blocking polymer has lower conductivity than said conductive polymer. 24. A method for forming a capacitor comprising: pressing and sintering a metal to form an anode with an anode wire extending therefrom; forming a functional dielectric on said anode; forming a conductive layer on said functional dielectric; and forming a thickened dielectric region on said anode wire wherein said forming of said thickened dielectric region comprises applying a forming electrolyte to said anode wire in the presence of applied voltage. 25. A method for forming a capacitor comprising: pressing and sintering a metal to form an anode with an anode wire extending therefrom; forming a functional dielectric on said anode; forming a conductive layer on said functional dielectric; and forming a thickened dielectric region on said anode wire by applying an applied voltage wherein said applied voltage is higher than a formation voltage. 26. A method for forming a capacitor comprising: pressing and sintering a metal to form an anode with an anode wire extending therefrom; forming a functional dielectric on said anode; forming a conductive layer on said functional dielectric; and forming a thickened dielectric region on said anode wire by applying a forming electrolyte wherein said applying of said forming electrolyte comprises a conductive nozzle. 27. The method for forming a capacitor of claim 26 wherein said conductive nozzle comprises a metal syringe. 28. The method for forming a capacitor of claim 24 wherein said applying said forming electrolyte comprises pressure.
Organic semiconducting electrolytes, e.g. TCNQ · CPC title
specially adapted for cathode · CPC title
Dielectric layers · CPC title
Solid electrolytic capacitors (H01G11/00 takes precedence) · CPC title
Formation of the solid electrolyte layer · CPC title
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