Multi-metal films, alternating film multilayers, formation methods and deposition system

Patent metadata

Field	Value
Publication number	US-10214817-B2
Application number	US-201414515135-A
Country	US
Kind code	B2
Filing date	Oct 15, 2014
Priority date	Oct 16, 2013
Publication date	Feb 26, 2019
Grant date	Feb 26, 2019

Abstract

A deposition system can conduct ALD or CVD deposition and can switch between the deposition modes. The system is capable of depositing multi-metal films and multi-layer films of alternating ALD and CVD films. Reactant supplies can be bypassed with carrier gas flow to maintain pressure in a reactor and in reactor supply lines and purge reactants.

First claim

The invention claimed is:

1. A deposition system comprising:
a reactor chamber;
a plurality of reactant supply vessels;
a carrier gas supply; and
a supply line and valve set, the valve set including a plurality of actuated valves being arranged to selectively bypass the plurality of reactant supply vessels and deliver carrier gas to the reactor chamber or carry reactant from the plurality of reactant supply vessels to the reactor chamber by operating at least two valves of the plurality of actuated valves in tandem,
the plurality of actuated valves being arranged such that each respective reactant supply vessel has an associated bypass valve connected between an upstream precursor supply valve disposed upstream of the respective reactant supply vessel and a downstream precursor supply valve disposed downstream of the respective reactant supply vessel, the upstream and downstream precursor supply valves controlling flow of carrier gas through the respective reactant supply vessel to establish a precursor supply path of carrier gas through the upstream precursor supply valve, the respective reactant supply vessel, the downstream precursor supply valve and to the reactor chamber and a bypass path of carrier gas through the associated bypass valve to the reactor chamber to bypass the respective reactant supply vessel;
a secondary supply line connected via an actuated switching valve to reactant gas and inert gas supplies;
a controller configured to control at least the upstream and downstream valves of the plurality of actuated valves in tandem and the associated bypass valve to selectively bypass one or both of reactant supplies and deliver reactant from one or both of the reactant supplies via an associated bypass path or precursor supply path;
a first control software executable by the controller to control the plurality of actuated valves and the actuated switching valve in a first predetermined sequence to conduct CVD (chemical vapor deposition), wherein the first predetermined sequence comprises opening and closing the upstream and downstream precursor supply valves, opening and closing the associated bypass valve, and opening and closing the actuated switching valve; and
a second control software executable by the controller to control the plurality of actuated valves and the actuated switching valve in a second predetermined sequence to conduct ALD (atomic layer deposition), wherein the second predetermined sequence comprises opening and closing the upstream and downstream precursor supply valves, opening and closing the associated bypass valve and opening and closing the actuated switching valve.

2. The system according to claim 1 , wherein the valve set provides three operational flow states that consist of flow through bypass path, flow through the precursor supply path, and no flow.

3. The system according to claim 2 , wherein the valve set further comprises auxiliary valves to isolate reactant during installation, removal or changing of a corresponding supply vessel.

4. The system according to claim 1 , wherein the valve set further comprises auxiliary valves to isolate reactant during installation, removal or changing of a corresponding supply vessel.

5. The system according to claim 1 , further comprising an interconnect supply line valve upstream of the reactant supplies that connects supply lines of two of the plurality of reactant supply vessels.

6. The system according to claim 1 , wherein the valve set includes a common bypass valve that provides a bypass of two of the plurality of reactant supplies.

7. The system according to claim 1 , wherein the valve set provides a separate bypass around each of the plurality of reactant supply vessels.

8. The system according to claim 1 , further comprising:
a third control software executable by the controller to control the plurality of actuated valves and the actuated switching valve in a third sequence to sequentially conduct CVD and ALD deposition cycles, wherein the third predetermined sequence comprises opening and closing the upstream and downstream precursor supply valves, opening and closing the associated bypass valve, and opening and closing the actuated switching valve.

9. The system according to claim 1 , wherein the first control software is executable by the controller to conduct the CVD cycle according to the first sequence by simultaneously flowing two reactants from a plurality of the reactant supplies to the reactor chamber.

10. The system according to claim 1 , wherein the second control software is executable by the controller to conduct the ALD cycle according to the second sequence by sequentially flowing two reactants from a plurality of the reactant supplies to the reactor chamber with an intervening purge cycle between the sequentially flowing.

11. The system according to claim 1 , wherein the plurality of reactant supply vessels comprises at least four reactant supply vessels.

12. A deposition system comprising:
a reactor;
a plurality of reactant supplies to said reactor, each reactant supply including a supply vessel and a reactant carrier gas path through said supply vessel to said reactor; each reactant supply being bypassed by a bypass path for flowing carrier gas in a bypass past the supply vessel;
a secondary supply line connected via an actuated switching valve to reactant gas and inert gas supplies;
a controller configured to control the carrier gas path and the bypass path to maintain a desired pressure in both the reactor and the supply vessel and to control flow of carrier and reactant into the reactor,
wherein, for each respective supply vessel, the bypass is performed by operating at least an upstream precursor supply valve and a downstream precursor supply valve connected to said respective supply vessel in tandem, the upstream precursor supply valve being disposed upstream of the respective supply vessel and the downstream precursor supply valve being disposed downstream of the respective supply vessel, wherein the reactant carrier gas path of the respective reactant supply vessel is defined through an associated bypass valve connected between the upstream and downstream precursor supply valves that control flow of carrier gas through the respective reactant supply vessel of the plurality of reactant supply vessels to establish the reactant carrier gas path of carrier gas through the upstream precursor supply valves, the respective reactant supply vessel, the downstream precursor supply valve and to the reactor, and the bypass path of carrier gas is defined through the associated bypass valve to the reactor chamber to bypass the respective reactant supply vessel; and
further comprising:
a first control software executable by the controller to control at least the upstream and downstream valves, the associated bypass valve, and the actuated switching valve in first predetermined sequence to conduct CVD (chemical vapor deposition), wherein the first predetermined sequence comprises opening and closing the upstream and downstream precursor supply valves, opening and closing the associated bypass valve, and opening and closing the actuated switching valve; and
a second control software executable by the controller to control at least the upstream and downstream valves, the associated bypass valve, and the actuated switching valve in a predetermined sequence comprises opening and closing the upstream and downstream precursor supply valves, opening and closing the associated bypass valve, and opening and closing the actuated switching valve.

13. The system according to claim 12 , further comprising:
a third control software executable by the controller to con

Assignees

• Univ Illinois

Inventors

• Takoudis Christos G
• Singh Manish
• Selvaraj Sathees Kannan

Classifications

• C23C16/45544

  characterized by the apparatus · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title

• C23C16/45523

  Pulsed gas flow or change of composition over time · CPC title

• C23C16/52 Primary

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title