Infrared LED

Patent metadata

Field	Value
Publication number	US-10211370-B2
Application number	US-201815916768-A
Country	US
Kind code	B2
Filing date	Mar 9, 2018
Priority date	Sep 11, 2015
Publication date	Feb 19, 2019
Grant date	Feb 19, 2019

Abstract

An infrared LED having a monolithic and stacked structure, having an n-doped base substrate, which includes GaAs, a lower cladding layer, an active layer for generating infrared radiation, an upper cladding layer, a current distribution layer and an upper contact layer. The layers being preferably disposed in the specified order. A first tunnel diode is disposed between the upper cladding layer and the current distribution layer, and the current distribution layer predominantly including an n-doped, Ga-containing layer having a Ga content>1%.

First claim

What is claimed is:

1. An infrared LED having a monolithic and stacked structure, the infrared LED comprising:
a n-doped base substrate that includes GaAs;
a lower cladding layer;
an active layer for generating infrared radiation;
an upper cladding layer;
a current distribution layer;
an upper contact layer that is epitaxially grown; and
a first tunnel diode disposed between the upper cladding layer and the current distribution layer,
wherein the current distribution layer includes a n-doped Ga-containing layer having a Ga content>1%, the current distribution layer having a layer resistance R □ <75Ω, the current distribution layer being made from GaAs or AlGaAs or InGaP, and
wherein the first tunnel diode has a thickness between 30 nm and 150 nm and includes an As-containing p layer doped with carbon having a dopant concentration>1×10 19 N/cm 3 , and the first tunnel diode includes a P-containing n layer doped with tellurium having a dopant concentration>3×10 18 N/cm 3 .

2. The infrared LED according to claim 1 , wherein a second tunnel diode is arranged between the current distribution layer and the upper contact layer, and wherein the upper contact layer is p-doped.

3. The infrared LED according to claim 1 , wherein the lower cladding layer includes a compound made from GaAs or from AlGaAs or from InGaAsP or from GaAsP or from InGaP or from AlInGaP.

4. The infrared LED according to claim 1 , wherein the upper cladding layer includes a compound made from GaAs or from AlGaAs or from InGaAsP or from GaAsP or from InGaP or from AlInGaP.

5. The infrared LED according to claim 1 , wherein the active layer is made from a multiple quantum well structure and has a thickness between 15 nm and 350 nm or between 30 nm and 300 nm.

6. The infrared LED according to claim 1 , wherein the current distribution layer has a thickness between 0.1 μm and 3.0 μm.

7. The infrared LED according to claim 1 , wherein the current distribution layer includes a n-doped Al x Ga 1-x As layer having an Al content x between 0% and 20%.

8. The infrared LED according to claim 1 , wherein the current distribution layer has a n-dopant concentration>1.0E18 N/cm 3 .

9. The infrared LED according to claim 1 , wherein the active layer is made from an In x Ga 1-x As/GaAs 1-y P y multiple quantum well structure, where 0.1≤x≤0.2 and 0.1≤y≤0.3.

10. The infrared LED according to claim 1 , wherein the lower cladding layer has a n doping, or wherein the upper cladding layer has a p doping.

11. The infrared LED according to claim 1 , wherein the tunnel diode is transparent to the radiation generated in the active layer.

12. The infrared LED according to claim 1 , wherein the current distribution layer has an absorption coefficient of less than 150/cm for the radiation generated in the active layer.

13. The infrared LED according to claim 2 , wherein the first tunnel diode or the second tunnel diode includes an As-containing layer, the As-containing layer being doped with carbon, or includes a P-containing layer, the P-containing layer being doped with tellurium.

14. The infrared LED according to claim 2 , wherein the first tunnel diode or the second tunnel diode includes a n-doped layer having a dopant concentration>3×10 18 N/cm 3 and a p-doped layer having a dopant concentration>1×10 19 N/cm 3 .

Assignees

• Azur Space Solar Power Gmbh

Inventors

• Fuhrmann Daniel
• Meusel Matthias

Classifications

• H01L33/025

  Electricity · mapped topic

• H01L33/06 Primary

  Electricity · mapped topic

• H01L33/04

  Electricity · mapped topic

• H01L33/305

  Electricity · mapped topic

• H01L33/30

  Electricity · mapped topic