Vertical p-type, n-type, p-type (PNP) junction integrated circuit (IC) structure

Patent metadata

Field	Value
Publication number	US-10211324-B2
Application number	US-201715795884-A
Country	US
Kind code	B2
Filing date	Oct 27, 2017
Priority date	Aug 12, 2014
Publication date	Feb 19, 2019
Grant date	Feb 19, 2019

Abstract

Various particular embodiments include an integrated circuit (IC) structure having: a stack region; and a silicon substrate underlying and contacting the stack region, the silicon substrate including: a silicon region including a doped subcollector region; a set of isolation regions overlying the silicon region; a base region between the set of isolation regions and below the stack region, the base region including an intrinsic base contacting the stack region, an extrinsic base contacting the intrinsic base and the stack region, and an amorphized extrinsic base contact region contacting the extrinsic base; a collector region between the set of isolation regions; an undercut collector-base region between the set of isolation regions and below the base region; and a collector contact region contacting the collector region under the intrinsic base and the collector-base region via the doped subcollector region.

First claim

We claim:

1. An integrated circuit (IC) structure comprising:
a stack region; and
a silicon substrate underlying and contacting the stack region, the silicon substrate including:
a silicon region including a doped subcollector region;
a set of isolation regions overlying the silicon region;
a base region between the set of isolation regions and below the stack region, the base region including an intrinsic base contacting the stack region, an extrinsic base contacting the intrinsic base and the stack region, and an amorphized extrinsic base contact region contacting the extrinsic base;
a collector region between the set of isolation regions;
an undercut collector-base region between the set of isolation regions and below the base region; and
a collector contact region contacting the collector region under the intrinsic base and the undercut collector-base region via the doped subcollector region,
wherein the undercut collector-base region does not extend laterally beyond the amorphized extrinsic base contact region, and
wherein the undercut collector-base region abuts one of the isolation regions in the set and the amorphized extrinsic base contact region.

2. An integrated circuit (IC) structure comprising:
a stack region; and
a silicon substrate underlying and contacting the stack region, the silicon substrate including:
a silicon region including a doped subcollector region;
a set of isolation regions overlying the silicon region;
a base region between the set of isolation regions and below the stack region, the base region including an intrinsic base contacting the stack region, an extrinsic base contacting the intrinsic base and the stack region, and an amorphized extrinsic base contact region contacting the extrinsic base;
a collector region between the set of isolation regions;
an undercut collector-base region between the set of isolation regions and below the base region, wherein the undercut collector-base region does not extend laterally beyond the set of isolation regions; and
a collector contact region contacting the collector region under the intrinsic base and the undercut collector-base region via the doped subcollector region,
wherein the undercut collector-base region does not extend laterally beyond the amorphized extrinsic base contact region.

Assignees

• IBM

Inventors

• Greco Joseph R
• Liu Qizhi
• Vallett Aaron L
• Vatter Robert F

Classifications

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10W10/0145

  of trenches having shapes other than rectangular or V-shape (H10W10/0143 takes precedence) · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H01L29/41708

  Electricity · mapped topic

• H01L21/8249

  Electricity · mapped topic