Air gap over transistor gate and related method

Patent metadata

Field	Value
Publication number	US-10211146-B2
Application number	US-201615152794-A
Country	US
Kind code	B2
Filing date	May 12, 2016
Priority date	May 12, 2016
Publication date	Feb 19, 2019
Grant date	Feb 19, 2019

Abstract

A semiconductor device may include a transistor gate in a device layer; an interconnect layer over the device layer; and an air gap extending through the interconnect layer to contact an upper surface of the transistor gate. The air gap provides a mechanism to reduce both on-resistance and off-capacitance for applications using SOI substrates such as radio frequency switches.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a transistor gate in a device layer;
an interconnect layer over the device layer, the interconnect layer including a dielectric layer and a first metal layer over the dielectric layer, the dielectric layer being composed of a single dielectric material; and
an air gap extending through the interconnect layer above the transistor gate, wherein a single portion of the dielectric layer of the interconnect layer is disposed between the air gap and any conductive via in the dielectric layer adjacent to the air gap such that the single portion of the dielectric layer directly contacts both the airgap and the any conductive via;
wherein the interconnect layer includes a local interconnect cap layer at an upper surface of the dielectric layer, and the first metal layer includes a first metal cap layer at an upper surface thereof, and an edge of at least one of the local interconnect cap layer and the first metal cap layer extends into the air gap.

2. The semiconductor device of claim 1 , wherein the dielectric layer is part of a local interconnect layer of the interconnect layer disposed over the device layer.

3. The semiconductor device of claim 1 , wherein a width of the air gap in the first metal cap layer is less than a width of the air gap in a dielectric of the first metal layer below the first metal cap layer.

4. The semiconductor device of claim 1 , wherein the first metal layer includes a metal wire extending laterally parallel to the transistor gate in the device layer, and wherein the air gap vertically extends above and below the metal wire.

5. The semiconductor device of claim 1 , wherein the air gap vertically extends only partially into an air gap capping layer above the first metal layer.

6. The semiconductor device of claim 5 , wherein the air gap capping layer includes a dielectric material.

7. The semiconductor device of claim 6 , wherein the dielectric material includes silicon oxide.

8. The semiconductor device of claim 1 , wherein the transistor gate includes a body, a silicide layer over the body and an etch stop layer over the silicide layer.

9. The semiconductor device of claim 8 , wherein the air gap contacts the etch stop layer.

10. The semiconductor device of claim 1 , wherein the air gap is laterally elongated.

11. The semiconductor device of claim 1 , wherein the air gap has a first width laterally adjacent a contact or a via and a second width wider than the first width laterally between contacts or vias.

12. A radio frequency semiconductor-on-insulator (RFSOI) switch, comprising:
a transistor gate in a semiconductor-on-insulator (SOI) layer of an SOI substrate;
an interconnect layer over the SOI layer, the interconnect layer including a local interconnect layer over the SOI layer and a first metal layer over the local interconnect layer, wherein the interconnect layer includes at least one dielectric layer, the at least one dielectric layer being composed of a single dielectric material; and
an air gap extending through the at least one dielectric layer above the transistor gate,
wherein a single portion of the at least one dielectric layer of the interconnect layer is disposed between the air gap and any conductive wire in the first metal layer adjacent to the air gap; and
wherein the single portion of the at least one dielectric layer of the interconnect layer is interposed between the air gap and any conductive via in the local interconnect layer adjacent to the air gap; and
wherein the interconnect layer includes a local interconnect cap layer at an upper surface of the local interconnect layer, and the first metal layer includes a first metal cap layer at an upper surface thereof, and an edge of at least one of the local interconnect cap layer and the first metal cap layer extends into the air gap.

13. The RFSOI switch of claim 12 , wherein the transistor gate includes a body, a silicide layer over the body and an etch stop layer over the silicide layer, and wherein the air gap contacts one of the etch stop layer, the silicide layer and the body of the transistor gate.

14. The RFSOI switch of claim 12 , wherein the air gap has a first width laterally adjacent a contact or a via and a second width wider than the first width laterally between contacts or vias.

15. The RFSOI switch of claim 12 , wherein the air gap vertically extends only partially into an air gap capping layer above the first metal layer.

16. The semiconductor device of claim 3 , wherein the air gap within the first metal cap layer is a single opening.

17. The RFSOI switch of claim 12 , wherein the single portion of the at least one dielectric layer directly contacts both the airgap and the any conductive via in the first metal layer, and wherein the single portion of the at least one dielectric layer directly contacts both the airgap and the any conductive via in the local interconnect layer.

18. A semiconductor device, comprising:
a transistor gate in a device layer;
an interconnect layer over the device layer, the interconnect layer including:
a dielectric layer, the dielectric layer being composed of a single dielectric material,
a cap layer over the dielectric layer, and
a first metal layer over the cap layer; and

an air gap extending through the interconnect layer above the transistor gate,
wherein a portion of the dielectric layer of the interconnect layer is disposed between the air gap and any conductive via in the dielectric layer adjacent to the air gap, and
wherein a width of the air gap in the cap layer is less than a width of the air gap in the dielectric layer, and
wherein the width of the air gap in the cap layer is less than a width of the air gap in the first metal layer.

Assignees

• Globalfoundries Inc

Inventors

• He Zhong-Xiang
• Jaffe Mark D
• Wolf Randy L
• Joseph Alvin J
• Cucci Brett T
• Stamper Anthony K

Classifications

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title

• H10W20/42

  Vias, e.g. via plugs · CPC title

• H10W20/40

  Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title

• H10W20/483 Primary

  Interconnections over air gaps, e.g. air bridges · CPC title