3D semiconductor device and structure with back-bias
US-9136153-B2 · Sep 15, 2015 · US
US10209448B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10209448-B2 |
| Application number | US-201615246925-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 25, 2016 |
| Priority date | Jun 8, 2011 |
| Publication date | Feb 19, 2019 |
| Grant date | Feb 19, 2019 |
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An integrated non-reciprocal polarization rotator comprises a substrate, a Faraday crystal, a first waveguide, and a second waveguide. The substrate has a recess extending to a predetermined depth. The Faraday crystal is mounted in the recess and optically coupled with the first waveguide and the second waveguide.
Opening claim text (preview).
What is claimed is: 1. A photonic device comprising: a substrate having a support surface and a device surface opposing the support surface, thereby defining a substrate thickness, wherein the substrate includes a fill region; a Faraday crystal mounted in the fill region and having a first facet and a second facet opposing the first facet; a first waveguide integrated on the substrate and optically coupled with the first facet of the Faraday crystal; an index matching region disposed between the first waveguide and the first facet of the Faraday crystal; and a second waveguide integrated on the substrate and optically coupled with the second facet of the Faraday crystal, wherein: the Faraday crystal is a first Faraday crystal; the fill region is a first fill region; and the photonic device further comprises: a second fill region in the substrate; a second Faraday crystal mounted in the second fill region, the second Faraday crystal having a first facet and a second facet opposing the first facet; a third waveguide integrated on the substrate and coupled with the first facet of the second Faraday crystal; a fourth waveguide integrated on the substrate and coupled with the second facet of the second Faraday crystal; a first beam splitter integrated on the substrate; and a second beam splitter integrated on the substrate; the first waveguide and the third waveguide are coupled with the first beam splitter; and the second waveguide and the fourth waveguide are coupled with the second beam splitter. 2. The photonic device of claim 1 , wherein the index matching region is a first index matching region and the photonic device further comprises a second index matching region disposed between the second waveguide and the second facet of the Faraday crystal. 3. The photonic device of claim 1 wherein the Faraday crystal is permanently polled. 4. The photonic device of claim 3 wherein the Faraday crystal comprises at least one of bismuth europium holmium gallium iron garnet or bismuth yttrium iron garnet. 5. The photonic device of claim 1 wherein the Faraday crystal comprises yttrium iron garnet or bismuth-doped iron garnet. 6. The photonic device of claim 5 further comprising a magnet. 7. The photonic device of claim 1 wherein the substrate comprises silicon. 8. The photonic device of claim 7 further comprising an insulating layer disposed between the substrate and the first waveguide; and between the substrate and the second waveguide. 9. The photonic device of claim 8 further comprising an amorphous silicon layer disposed between the insulating layer and the Faraday crystal. 10. The photonic device of claim 1 , wherein the first beam splitter, the second beam splitter, or both the first beam splitter and the second beam splitter are polarizing beam splitters. 11. The photonic device of claim 1 , the photonic device further comprising a reciprocal polarization rotator, wherein: the reciprocal polarization rotator is between the first waveguide and the first beam splitter; and the reciprocal polarization rotator is integrated on the substrate. 12. The photonic device of claim 1 , wherein: the first beam splitter is further coupled with a fifth waveguide; the fifth waveguide is integrated on the substrate; and the fifth waveguide is an input port. 13. The photonic device of claim 1 , the photonic device further comprising: a first reciprocal polarization rotator, wherein: the first reciprocal polarization rotator is between the first waveguide and the first beam splitter; and the first reciprocal polarization rotator is integrated on the substrate; and a second reciprocal polarization rotator, wherein: the second reciprocal polarization rotator is between the third waveguide and the first beam splitter; and the second reciprocal polarization rotator is integrated on the substrate. 14. The photonic device of claim 13 , wherein: the first reciprocal polarization rotator, the first waveguide, the first Faraday crystal, and the second waveguide are on a first optical path between the first beam splitter and the second beam splitter; and the second reciprocal polarization rotator, the third waveguide, the second Faraday crystal, and the fourth waveguide are on a second optical path between the first beam splitter and the second beam splitter.
Optical coupling means (G02B6/36, G02B6/42 take precedence) · CPC title
Silicon · CPC title
comprising electrically conductive elements, e.g. wire grids, conductive particles · CPC title
having optical polarisation effects · CPC title
used as non-reciprocal devices, e.g. optical isolators, circulators (G02F1/0955 takes precedence) · CPC title
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