Synthesis of nanopeapods by galvanic displacement of segmented nanowires

Patent metadata

Field	Value
Publication number	US-10208390-B2
Application number	US-201514930247-A
Country	US
Kind code	B2
Filing date	Nov 2, 2015
Priority date	May 21, 2010
Publication date	Feb 19, 2019
Grant date	Feb 19, 2019

Abstract

A method for fabricating nanostructures and nanostructures are disclosed, which can include forming a multi-segmented nanowire; and performing a galvanic displacement reaction on the multi-segmented nanowire. The method utilizes template directed electrodeposition to fabricate nanowires with alternating layers of sacrificial/noble metal, enabling a new level of control over particle spacing, aspect ratio, and composition. Moreover, by exploiting the redox potential dependent reaction of galvanic displacement, nanopeapod materials can be extended (semiconductor/metal, p-type/n-type, metal/metal, ferromagnetic/nonmagnetic, etc.) beyond the fundamental metal/metal-oxide nanopeapods synthesized by high temperature techniques. Co/Au and Ni/Au multisegmented nanowires are disclosed, which can be create Te/Au nanopeapods by galvanic displacement, producing Te nanotubes and nanowires with embedded Au particles, respectively.

First claim

What is claimed is:

1. A nanostructure obtainable by a process of forming a multi-segmented nanowire and performing a galvanic displacement reaction on the multi-segmented nanowire, the nanostructure comprising:
alternating layers of sacrificial metals and noble metals, the sacrificial metals being dissolved by the galvanic displacement reaction on the multi-segmented nanowire in a tellurium (Te) solution); and
thereby forming a tellurium (Te) tube with embedded noble metals, wherein the embedded noble metals are in a spaced apart relationship within a coating of tellurium, and wherein the coating of tellurium coats the embedded noble metals and encapsulated at least a volume of the sacrificial metal, which has been dissolved.

2. The nanostructure of claim 1 , wherein the nanostructure is a semiconductor.

3. The nanostructure of claim 1 , wherein the nanostructure is a semiconductor nanotube.

4. The nanostructure of claim 1 , wherein the multi-segmented nanowire is formed by template directed electrodeposition.

5. The nanostructure of claim 1 , wherein the multi-segmented nanowire is comprised of alternating layers of Co (Cobalt) and Au (Gold).

6. The nanostructure of claim 1 , wherein the multi-segmented nanowire is comprised of alternating layers of Ni (Nickel) and Au (Gold).

7. The nanostructure of claim 1 , wherein the multi-segmented nanowire is a substrate bound nanowire.

8. The nanostructure of claim 1 , wherein the multi-segmented nanowire is suspended in isopropyl alcohol (IPA) to provide dispersion, and then the multi-segmented nanowire is submerged in the tellurium (Te) solution.

9. The nanostructure of claim 1 , wherein the multi-segmented nanowire is comprised of alternating layers of Co (Cobalt) and Au (Gold), and the Co (Cobalt) serves as the sacrificial metal for galvanic displacement and the Au (Gold) becomes encapsulated by the coating of tellurium.

10. The nanostructure of claim 1 , wherein the multi-segmented nanowire is comprised of alternating layers of Co (Gold) and Au (Gold), and the Co (Cobalt) serves as the sacrificial metal for the galvanic displacement reaction and the Au (Gold) becomes encapsulated by the coating of tellurium (Te).

11. A nanostructure obtainable by a process of forming a multi-segmented nanowire and performing a galvanic displacement reaction on the multi-segmented nanowire, wherein the multi-segmented nanowire includes alternating layers of sacrificial metals and noble metals, the sacrificial metals being dissolved by the galvanic displacement reaction on the multi-segmented nanowire in a tellurium (Te) solution), the nanostructure comprising:
a tellurium (Te) tube with embedded noble metals, wherein the embedded noble metals are in a spaced apart relationship within a coating of tellurium, and wherein the coating of tellurium coats the embedded noble metals and encapsulated at least a volume of the sacrificial metal, which has been dissolved.

12. The nanostructure of claim 11 , wherein the nanostructure is a semiconductor.

13. The nanostructure of claim 11 , wherein the nanostructure is a semiconductor nanotube.

14. The nanostructure of claim 11 , wherein the multi-segmented nanowire is comprised of alternating layers of Co (Cobalt) and Au (Gold).

15. The nanostructure of claim 11 , wherein the multi-segmented nanowire is comprised of alternating layers of Ni (Nickel) and Au (Gold).

16. The nanostructure of claim 11 , wherein the multi-segmented nanowire is a substrate bound nanowire.

17. The nanostructure of claim 11 , wherein the multi-segmented nanowire is comprised of alternating layers of Co (Cobalt) and Au (Gold), and the Co (Cobalt) serves as the sacrificial metal for galvanic displacement and the Au (Gold) becomes encapsulated by the coating of tellurium.

18. The nanostructure of claim 11 , wherein the multi-segmented nanowire is comprised of alternating layers of Co (Cobalt) and Au (Gold), and the Co (Cobalt) serves as the sacrificial metal for the galvanic displacement reaction and the Au (Gold) becomes encapsulated by the coating of tellurium (Te).

Assignees

• Univ California

Inventors

• Myung Nosang Vincent
• Hangarter Carlos Maldonado

Classifications

• B22F1/0547

  Nanofibres or nanotubes · CPC title

• C22C1/0466

  Alloys based on noble metals · CPC title

• C23C18/54

  Contact plating, i.e. electroless electrochemical plating · CPC title

• C22C1/0433

  Nickel- or cobalt-based alloys · CPC title

• B82B3/0033

  Manufacture or treatment of substrate-free structures, i.e. not connected to any support · CPC title