Organic semiconductor thin film production method

Patent metadata

Field	Value
Publication number	US-10205094-B2
Application number	US-201414786835-A
Country	US
Kind code	B2
Filing date	Apr 23, 2014
Priority date	Apr 25, 2013
Publication date	Feb 12, 2019
Grant date	Feb 12, 2019

Abstract

A raw material solution (6), in which an organic semiconductor material is dissolved in a solvent, is supplied to a substrate (1). The solvent is evaporated so that crystals of the organic semiconductor material are precipitated. Thus, an organic semiconductor thin film (7) is formed on the substrate (1). An edge forming member (2) having a contact face (2a) on one side is used and located opposite the substrate (1) so that the plane of the contact face (2a) intersects the surface of the substrate (1) at a predetermined angle. The raw material solution (6) is supplied to the substrate (1) and formed into a droplet (6a) that comes into contact with the contact face (2a). The substrate (1) and the edge forming member (2) are moved relative to each other in a direction parallel to the surface of the substrate (1) so as to separate the edge forming member (2) from the droplet (6a), and while the raw material solution (6) is supplied so that a change in size of the droplet (6a) with the relative movement is maintained within a predetermined range, the solvent contained in the droplet (6a) is evaporated to form the organic semiconductor thin film (7) on the substrate (1) after the contact face (2a) has been moved. In this manner, a large-area organic semiconductor single crystal thin film having high charge mobility can be manufactured by a simple process using a solvent evaporation method based on droplet formation.

First claim

The invention claimed is:

1. A method for manufacturing an organic semiconductor thin film, comprising:
supplying a raw material solution, in which an organic semiconductor material is dissolved in a solvent, to a substrate;
evaporating the solvent so that crystals of the organic semiconductor material are precipitated; and
forming an organic semiconductor thin film on the substrate,
wherein the method uses an edge forming member having a contact face on one side,
the edge forming member is located opposite the substrate so that a plane of the contact face intersects a surface of the substrate at a predetermined angle,
the raw material solution is supplied to the substrate and while the raw material solution contacts the substrate, the raw material solution is brought into contact with the contact face to form a droplet of the raw material solution,
the substrate and the edge forming member are moved relative to each other in a direction parallel to the surface of the substrate so as to separate the edge forming member from the droplet, and while the raw material solution is supplied, the solvent contained in the droplet is evaporated and crystals of the organic semiconductor material are continuously precipitated on the substrate after the contact face has been moved in accordance with the supply of the raw material solution, and
in the precipitation process, a supply rate of the raw material solution and a speed of the relative movement are adjusted in accordance with a vapor rate of the solvent, so that a size of the droplet in the direction of the relative movement is maintained within a predetermined range in which an effect of defining a direction of growth of the crystals is obtained via an attachment of the droplet to the contact face.

2. The method for manufacturing an organic semiconductor thin film according to claim 1 , wherein the droplet is formed to have a shape whose thickness, measured from the surface of the substrate, gradually decreases with increasing distance from the contact face.

3. The method for manufacturing an organic semiconductor thin film according to claim 1 , wherein the surface of the substrate on which the droplet of the raw material solution is formed has a contact angle of 30° or less with the raw material solution.

4. The method for manufacturing an organic semiconductor thin film according to claim 1 , wherein the edge forming member is spaced from the substrate by a predetermined gap, and the raw material solution is supplied through the gap from one or more raw material solution supply ports that are located adjacent to the gap on an opposite side of the edge forming member with respect to the contact face.

5. The method for manufacturing an organic semiconductor thin film according to claim 4 , wherein a plurality of the raw material solution supply ports are provided, and each of the raw material solution supply ports supplies different types of raw material solutions, so that different types of organic semiconductor thin films are simultaneously formed on the same substrate.

6. The method for manufacturing an organic semiconductor thin film according claim 1 , wherein the raw material solution is supplied to a side of the edge forming member facing the contact face through one or more inner cavities provided inside of the edge forming member.

7. The method for manufacturing an organic semiconductor thin film according to claim 1 , wherein the edge forming member is spaced from the substrate by a predetermined gap, and the raw material solution is supplied to the surface of the substrate directly under the edge forming member through one or more inner cavities provided inside of the edge forming member.

8. The method for manufacturing an organic semiconductor thin film according to claim 7 , wherein the edge forming member has a plurality of the inner cavities, and different types of raw material solutions are supplied through each of the inner cavities, so that different types of organic semiconductor thin films are simultaneously formed on the same substrate.

9. An organic semiconductor device comprising:
a substrate; and
an organic semiconductor thin film formed on a surface of the substrate,
wherein the organic semiconductor thin film is manufactured by the method according to claim 1 , and is a single crystal thin film having a rectangular planar shape that is 1 cm or more on a side and 100 nm or less thick.

10. The organic semiconductor device according to claim 9 , wherein a distribution of angles between directions of each of crystallographic axes of the organic semiconductor thin film is in a range of 8°.

11. The organic semiconductor device according to claim 9 , wherein the surface of the substrate on which the organic semiconductor thin film is formed has a contact angle of 30° or less with the raw material solution.

Assignees

• Univ Osaka
• Pi Crystal Inc

Inventors

• Takeya Junichi
• SOEDA Junshi

Classifications

• H01L51/0558

  Electricity · mapped topic

• H01L51/0068

  Electricity · mapped topic

• B05C11/028

  with a body having a large flat spreading or distributing surface · CPC title

• H01L51/0003 Primary

  Electricity · mapped topic

• C30B29/58

  Macromolecular compounds · CPC title