Organic light emitting diode display

Patent metadata

Field	Value
Publication number	US-10204976-B2
Application number	US-201815900715-A
Country	US
Kind code	B2
Filing date	Feb 20, 2018
Priority date	Aug 2, 2012
Publication date	Feb 12, 2019
Grant date	Feb 12, 2019

Abstract

An organic light emitting diode display includes a substrate, a scan line on the substrate for transferring a scan signal, a data line crossing the scan line and for transferring a data signal, a driving voltage line crossing the scan line and for transferring a driving voltage, a switching thin film transistor coupled to the scan line and the data line, a driving thin film transistor coupled to a switching drain electrode of the switching thin film transistor, and an organic light emitting diode (OLED) coupled to a driving drain electrode of the driving thin film transistor, wherein a driving semiconductor layer of the driving thin film transistor is bent and in a plane substantially parallel to the substrate.

First claim

What is claimed is:

1. An organic light emitting diode display comprising:
a substrate;
a scan line on the substrate;
a data line;
a first thin film transistor electrically coupled to the scan line and the data line;
a voltage line;
an organic light emitting diode;
a second thin film transistor electrically coupled to the voltage line and the organic light emitting diode;
a third thin film transistor electrically coupled to the organic light emitting diode and the second thin film transistor, a semiconductor layer of the second thin film transistor and the third thin film transistor being integral in a body;
an insulating layer covering the second thin film transistor; and
a storage capacitor electrically coupled to a gate electrode of the second thin film transistor, the storage capacitor comprising:
a first storage capacitor plate comprising a portion of the gate electrode of the second thin film transistor;
a second storage capacitor plate overlapping the first storage capacitor plate; and
a portion of the insulating layer between the first storage capacitor plate and the second storage capacitor plate.

2. The organic light emitting diode display of claim 1 , further comprising a fourth thin film transistor electrically coupled to the voltage line and the second thin film transistor.

3. The organic light emitting diode display of claim 2 , wherein the semiconductor layer extends to and is electrically coupled to the fourth thin film transistor.

4. The organic light emitting diode display of claim 3 , wherein the semiconductor layer is bent.

5. The organic light emitting diode display of claim 1 , wherein the semiconductor layer of the second thin film transistor extends and is bent under the gate electrode of the second thin film transistor.

6. An organic light emitting diode display comprising:
a substrate;
a scan line on the substrate;
a data line;
a first thin film transistor electrically coupled to the scan line and the data line;
a voltage line;
an organic light emitting diode;
a second thin film transistor electrically coupled to the voltage line and the organic light emitting diode;
a third thin film transistor electrically coupled to the voltage line and the second thin film transistor, a semiconductor layer of the second thin film transistor and the third thin film transistor being integral in a body;
an insulating layer covering the second thin film transistor; and
a storage capacitor electrically coupled to a gate electrode of the second thin film transistor, the storage capacitor comprising:
a first storage capacitor plate comprising a portion of the gate electrode of the second thin film transistor;
a second storage capacitor plate overlapping the first storage capacitor plate; and
a portion of the insulating layer between the first storage capacitor plate and the second storage capacitor plate.

7. The organic light emitting diode display of claim 6 , further comprising a fourth thin film transistor electrically coupled to the organic light emitting diode and the second thin film transistor.

8. The organic light emitting diode display of claim 7 , wherein the semiconductor layer extends to the fourth thin film transistor.

9. The organic light emitting diode display of claim 8 , wherein the semiconductor layer is bent.

10. The organic light emitting diode display of claim 6 , wherein the semiconductor layer of the second thin film transistor extends and is bent under the gate electrode of the second thin film transistor.

11. An organic light emitting diode display comprising:
a substrate;
a scan line on the substrate;
a data line;
a first thin film transistor electrically coupled to the scan line and the data line;
a first voltage line;
an organic light emitting diode;
a second thin film transistor electrically coupled to the first voltage line and the organic light emitting diode;
a second voltage line;
a storage capacitor electrically coupled to a gate electrode of the second thin film transistor;
a third thin film transistor electrically coupled to the second voltage line and the storage capacitor, a semiconductor layer of the second thin film transistor and the third thin film transistor being integral in a body; and
an insulating layer covering the second thin film transistor,
wherein the storage capacitor comprises:
a first storage capacitor plate comprising a portion of the gate electrode of the second thin film transistor;
a second storage capacitor plate overlapping the first storage capacitor plate; and
a portion of the insulating layer between the first storage capacitor plate and the second storage capacitor plate.

12. The organic light emitting diode display of claim 11 , wherein the semiconductor layer of the second thin film transistor extends and is bent under the gate electrode of the second thin film transistor.

13. The organic light emitting diode display of claim 12 , further comprising a fourth thin film transistor electrically connected to the second thin film transistor and the first voltage line.

14. The organic light emitting diode display of claim 13 , wherein the semiconductor layer of the second thin film transistor extends to the fourth thin film transistor.

15. The organic light emitting diode display of claim 12 , further comprising a fourth thin film transistor electrically connected to the second thin film transistor and the organic light emitting diode.

16. The organic light emitting diode display of claim 15 , wherein the semiconductor layer of the second thin film transistor extends to the fourth thin film transistor.

17. The organic light emitting diode display of claim 12 , further comprising a fourth thin film transistor electrically connected to the second thin film transistor and the second voltage line.

18. The organic light emitting diode display of claim 17 , wherein the semiconductor layer of the second thin film transistor extends to the fourth thin film transistor.

19. The organic light emitting diode display of claim 12 , further comprising a fourth thin film transistor electrically connected to the second voltage line and the organic light emitting diode.

20. The organic light emitting diode display of claim 19 , wherein the semiconductor layer of the second thin film transistor extends to the fourth thin film transistor.

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Se-Ho
• Park Jin-Woo
• Lee Won-Se

Classifications

• G09G3/3225 Primary

  using an active matrix · CPC title

• G09G2300/0809

  Several active elements per pixel in active matrix panels · CPC title

• H01L27/1255

  Electricity · mapped topic

• H01L27/3262

  Electricity · mapped topic

• H01L27/3265

  Electricity · mapped topic