Organic light emitting diode display

US9450040B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9450040-B2
Application numberUS-201313952508-A
CountryUS
Kind codeB2
Filing dateJul 26, 2013
Priority dateAug 2, 2012
Publication dateSep 20, 2016
Grant dateSep 20, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An organic light emitting diode display includes a substrate, a scan line on the substrate for transferring a scan signal, a data line crossing the scan line and for transferring a data signal, a driving voltage line crossing the scan line and for transferring a driving voltage, a switching thin film transistor coupled to the scan line and the data line, a driving thin film transistor coupled to a switching drain electrode of the switching thin film transistor, and an organic light emitting diode (OLED) coupled to a driving drain electrode of the driving thin film transistor, wherein a driving semiconductor layer of the driving thin film transistor is bent and in a plane substantially parallel to the substrate.

First claim

Opening claim text (preview).

What is claimed is: 1. An organic light emitting diode display comprising: a substrate; a scan line on the substrate for transferring a scan signal; a data line crossing the scan line and for transferring a data signal; a driving voltage line crossing the scan line and for transferring a driving voltage; a switching thin film transistor coupled to the scan line and the data line; a driving thin film transistor comprising a driving drain electrode, a driving semiconductor layer, and a driving source electrode, the driving thin film transistor being coupled to a switching drain electrode of the switching thin film transistor; an organic light emitting diode (OLED) coupled to the driving drain electrode of the driving thin film transistor; a first insulating layer covering the driving semiconductor layer, and a storage capacitor on the first insulating layer and overlapping the driving semiconductor layer, the storage capacitor comprising: a first storage capacitor plate on the first insulating layer and overlapping the driving semiconductor layer; a second insulating layer covering the first storage capacitor plate; and a second storage capacitor plate on the second insulating layer and overlapping the first storage capacitor plate, the second storage capacitor plate being spaced from the driving source electrode, wherein the driving semiconductor layer of the driving thin film transistor is bent and the driving semiconductor layer of the driving thin film transistor is in a plane substantially parallel to the substrate. 2. The organic light emitting diode display of claim 1 , wherein the driving semiconductor layer comprises a plurality of bent portions. 3. The organic light emitting diode display of claim 2 , wherein the driving semiconductor layer comprises: a plurality of first extension portions extending in a first direction; and a plurality of second extension portions extending in a second direction that is different from the first direction, and wherein one of the first extension portions and one of the second extension portions are coupled through one of the bent portions. 4. An organic light emitting diode display comprising: a substrate; a scan line on the substrate for transferring a scan signal; a data line crossing the scan line and for transferring a data signal; a driving voltage line crossing the scan line and for transferring a driving voltage; a switching thin film transistor coupled to the scan line and the data line; a driving thin film transistor comprising a driving semiconductor layer, the driving thin film transistor being coupled to a switching drain electrode of the switching thin film transistor; an organic light emitting diode (OLED) coupled to a driving drain electrode of the driving thin film transistor; a first insulating layer covering the driving semiconductor layer; a storage capacitor on the first insulating layer and overlapping the driving semiconductor layer, the storage capacitor comprising: a first storage capacitor plate on the first insulating layer and overlapping the driving semiconductor layer; a second insulating layer covering the first storage capacitor plate; and a second storage capacitor plate on the second insulating layer and overlapping the first storage capacitor plate; and a compensation thin film transistor coupled to the driving thin film transistor and for compensating a threshold voltage of the driving thin film transistor, wherein the driving semiconductor layer of the driving thin film transistor is bent and the driving semiconductor layer of the driving thin film transistor is in a plane substantially parallel to the substrate, wherein the driving semiconductor layer comprises: a plurality of bent portions; a plurality of first extension portions extending in a first direction; and a plurality of second extension portions extending in a second direction that is different from the first direction, and wherein one of the first extension portions and one of the second extension portions are coupled through one of the bent portions. 5. The organic light emitting diode display of claim 4 , wherein the driving semiconductor layer further comprises branched portions branched from the bent portions. 6. The organic light emitting diode display of claim 5 , wherein the storage capacitor overlaps the branched portions. 7. The organic light emitting diode display of claim 4 , further comprising: a light emission control line for transferring a light emission control signal; and a light emission control thin film transistor configured to be turned on by the light emission control signal to transfer the driving voltage from the driving thin film transistor to the OLED, wherein the light emission control thin film transistor is between the driving drain electrode and the OLED. 8. The organic light emitting diode display of claim 7 , further comprising a transistor connection portion for coupling a compensation source electrode of the compensation thin film transistor to a light emission control source electrode of the light emission control thin film transistor, wherein the storage capacitor extends to overlap the transistor connection portion. 9. The organic light emitting diode display of claim 8 , wherein the driving semiconductor layer extends to overlap the transistor connection portion. 10. The organic light emitting diode display of claim 9 , further comprising a third insulating layer on the second insulating layer, wherein the transistor connection portion is at a same layer as the data line, and is coupled through a contact hole in the third insulating layer to the compensation source electrode and the light emission control source electrode. 11. The organic light emitting diode display of claim 7 , wherein the driving semiconductor layer comprises a first path semiconductor layer coupled to the compensation thin film transistor, and a second path semiconductor layer coupled to the light emission control thin film transistor, and wherein a length of the first path semiconductor layer is smaller than a length of the second path semiconductor layer. 12. The organic light emitting diode display of claim 11 , wherein the storage capacitor overlaps the first path semiconductor layer and the second path semiconductor layer. 13. The organic light emitting diode display of claim 7 , further comprising: a third insulating layer covering the second storage capacitor plate; a connection member on the third insulating layer and coupled to the first storage capacitor plate through a first contact hole in the second insulating layer and the third insulating layer; and a protective layer covering the third insulating layer and the connection member, wherein the connection member is coupled to a compensation drain electrode of the compensation thin film transistor. 14. The organic light emitting diode display of claim 13 , wherein the scan line is at a same layer as the first storage capacitor plate, and wherein the data line and the driving voltage line are at a same layer as the connection member. 15. The organic light emitting diode display of claim 14 , wherein the driving voltage line is coupled through a second contact hole in the third insulating layer to the second storage capacitor plate. 16. The organic light emitting diode display of claim 15 , further comprising an operation control thin film transistor configured to be turned on by the light emission control signal transferred by the light emission control line to transfer the driving voltage to the driving thin film tra

Assignees

Inventors

Classifications

  • G09G3/3225Primary

    using an active matrix · CPC title

  • Several active elements per pixel in active matrix panels · CPC title

  • H10K59/131Primary

    Interconnections, e.g. wiring lines or terminals · CPC title

  • the pixel elements being TFTs · CPC title

  • integrated with passive devices, e.g. auxiliary capacitors · CPC title

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What does patent US9450040B2 cover?
An organic light emitting diode display includes a substrate, a scan line on the substrate for transferring a scan signal, a data line crossing the scan line and for transferring a data signal, a driving voltage line crossing the scan line and for transferring a driving voltage, a switching thin film transistor coupled to the scan line and the data line, a driving thin film transistor coupled t…
Who is the assignee on this patent?
Samsung Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification G09G3/3225. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 20 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).