Euv mirror and optical system comprising euv mirror
US-2016195648-A1 · Jul 7, 2016 · US
US10203435B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10203435-B2 |
| Application number | US-201615215123-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 20, 2016 |
| Priority date | Jan 20, 2014 |
| Publication date | Feb 12, 2019 |
| Grant date | Feb 12, 2019 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An EUV mirror has a multilayer arrangement applied on a substrate. The multilayer arrangement includes a first layer group having ten or more first layer pairs. Each first layer pair has a first layer composed of a high refractive index first layer material having a first layer thickness, has a second layer composed of a low refractive index second layer material having a second layer thickness and has a period thickness corresponding to the sum of the layer thicknesses of all the layers of a first layer pair. The layer thicknesses of one of the layer materials are defined, depending on the period number, by a simply monotonic first layer thickness profile function, e.g. by a linear, quadratic or exponential layer thickness profile function. The layer thicknesses of the other of the layer materials vary, depending on the period number, in accordance with a second layer thickness profile function.
Opening claim text (preview).
What is claimed is: 1. A mirror for extreme ultraviolet (EUV) radiation comprising: a substrate and a multilayer arrangement on the substrate and arranged to reflect the EUV radiation having a wavelength (λ), wherein: the multilayer arrangement comprises a multiplicity of layer pairs having alternating layers composed of a high refractive index layer material and a low refractive index layer material, wherein the high refractive index layer material has a larger real part of the refractive index than does the low refractive index layer material at the wavelength (λ); the multilayer arrangement comprises a first layer group (LG 1 ) having a reflective effect for the EUV radiation and having ten or more first layer pairs; each first layer pair comprises a first layer (H) composed of a high refractive index first layer material having a first layer thickness and a second layer (L) composed of a low refractive index second layer material having a second layer thickness and has a respective period thickness (P) totaling a sum of the layer thicknesses of all the layers of each first layer pair; the layer thicknesses of one of the layer materials are defined, depending on the period number, by a simply monotonic first layer thickness profile function which is completely defined by one, two or three layer thickness parameters; the layer thicknesses of the other of the layer materials vary, depending on the period number, in accordance with a second layer thickness profile function; and the first layer thickness profile function is a linearly rising or linearly falling function, such that the layer thicknesses of one of the layer materials increase linearly or decrease linearly over an entirety of first layer group (LG 1 ). 2. The EUV mirror as claimed in claim 1 , wherein the first layer group (LG 1 ) comprises fifteen or more first layer pairs. 3. The EUV mirror as claimed in claim 2 , wherein the first layer group (LG 1 ) comprises 50 or more first layer pairs. 4. The EUV mirror as claimed in claim 1 , wherein the second layer thickness profile function proceeds in a direction opposite to the first layer thickness profile function. 5. An optical system comprising at least one EUV mirror as claimed in claim 1 . 6. The optical system as claimed in claim 5 , wherein the optical system is a projection lens or an illumination system for a microlithographic projection exposure apparatus. 7. The EUV mirror as claimed in claim 1 , wherein the second layer thickness profile function is a linearly rising or linearly falling function. 8. A mirror for extreme ultraviolet (EUV) radiation comprising: a substrate and a multilayer arrangement on the substrate and arranged to reflect the EUV radiation having a wavelength (λ), wherein: the multilayer arrangement comprises a multiplicity of layer pairs having alternating layers composed of a high refractive index layer material and a low refractive index layer material, wherein the high refractive index layer material has a larger real part of the refractive index than does the low refractive index layer material at the wavelength (λ); the multilayer arrangement comprises a first layer group (LG 1 ) having a reflective effect for the EUV radiation and having ten or more first layer pairs; each first layer pair comprises a first layer (H) composed of a high refractive index first layer material having a first layer thickness and a second layer (L) composed of a low refractive index second layer material having a second layer thickness and has a respective period thickness (P) totaling a sum of the layer thicknesses of all the layers of each first layer pair; the layer thicknesses of one of the layer materials are defined, depending on the period number, by a simply monotonic first layer thickness profile function which is completely defined by one, two or three layer thickness parameters; the layer thicknesses of the other of the layer materials vary, depending on the period number, in accordance with a second layer thickness profile function; and the second layer thickness profile function is a linearly rising or linearly falling function. 9. The EUV mirror as claimed in claim 8 , wherein the first layer thickness profile function is a quadratic or an exponential function. 10. The EUV mirror as claimed in claim 8 , wherein the second layer thickness profile function proceeds in a direction opposite to the first layer thickness profile function. 11. The EUV mirror as claimed in claim 9 , wherein the second layer thickness profile function proceeds in a direction opposite to the first layer thickness profile function. 12. The EUV mirror as claimed in claim 8 , wherein the second layer thickness profile function proceeds in a direction opposite to the first layer thickness profile function. 13. A mirror for extreme ultraviolet (EUV) radiation comprising: a substrate and a multilayer arrangement on the substrate and arranged to reflect the EUV radiation having a wavelength (λ), wherein: the multilayer arrangement comprises a multiplicity of layer pairs having alternating layers composed of a high refractive index layer material and a low refractive index layer material, wherein the high refractive index layer material has a larger real part of the refractive index than does the low refractive index layer material at the wavelength (λ); the multilayer arrangement comprises a first layer group (LG 1 ) having a reflective effect for the EUV radiation and having ten or more first layer pairs; each first layer pair comprises a first layer (H) composed of a high refractive index first layer material having a first layer thickness and a second layer (L) composed of a low refractive index second layer material having a second layer thickness and has a respective period thickness (P) totaling a sum of the layer thicknesses of all the layers of each first layer pair; the layer thicknesses of one of the layer materials are defined, depending on the period number, by a simply monotonic first layer thickness profile function which is completely defined by one, two or three layer thickness parameters; the layer thicknesses of the other of the layer materials vary, depending on the period number, in accordance with a second layer thickness profile function; the multilayer arrangement comprises a second layer group (LG 2 ) having a reflective effect for the radiation and having ten or more second layer pairs, wherein the first layer group (LG 1 ) is arranged between the substrate and the second layer group (LG 2 ); and the layer thicknesses of the first layer material and of the second layer material within the first layer group (LG 1 ) and within the second layer group (LG 2 ) vary linearly in respectively opposite directions. 14. The EUV mirror as claimed in claim 13 , wherein within the second layer group (LG 2 ) the layer thicknesses of one of the layer materials are defined, depending on the period number, by a simply monotonic first layer thickness profile function and the layer thicknesses of the other of the layer materials vary, depending on the period number, in accordance with a second layer thickness profile function. 15. A mirror for extreme ultraviolet (EUV) radiation comprising: a substrate and a multilayer arrangement on the substrate and arranged to reflect the EUV radiation having a wavelength (λ), wherein: the multilayer arrangement comprises a multiplicity of layer pairs having alternating layers composed of a high refractive index layer material and a low refractive index layer material, wherein the high refractive index layer material has a larger real part
Mirrors {(vehicle mirrors involving special optical features B60R1/08)} · CPC title
the reflecting layers comprising two or more metallic layers · CPC title
Devices having a multilayer structure · CPC title
Ultraviolet [UV] mirrors (apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06) · CPC title
Multilayer mirrors, i.e. having two or more reflecting layers (G02B5/0883, G02B5/0891 take precedence) · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.