Analog-to-digital conversion with magnetic tunnel junctions

Patent metadata

Field	Value
Publication number	US-10200058-B1
Application number	US-201815961296-A
Country	US
Kind code	B1
Filing date	Apr 24, 2018
Priority date	Apr 24, 2018
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

Analog-to-digital conversion circuits are presented which employ magnetic tunnel junction (MTJ) elements that change state probabilistically in response to application of electrical pulses. Some implementations form a multi-channel analog-to-digital conversion circuit, with each channel comprising a magnetic tunnel junction (MTJ) element, and a pulse generator that determines characteristics of perturbation pulses to be applied to an MTJ element based at least on an analog input. The pulse generator also applies read pulses to the MTJ element to produce indications of magnetization state changes for the MTJ element due to application of the perturbation pulses. Each channel of the multi-channel analog-to-digital conversion circuit can include count circuitry that counts the indications of the magnetization state changes for an associated MTJ element. Outputs from each single-channel analog-to-digital converter are combined to determine a digital output representative of the analog input.

First claim

What is claimed is:

1. A circuit comprising:
an analog input node;
a sampler coupled to the analog input node and having a sample result terminal;
a plurality of analog-to-digital converters, each comprising:
a magnetic tunnel junction (MTJ) element coupled at a free layer terminal to a pulse terminal of a pulse generator;
the pulse generator coupled at a control terminal to the sample result terminal, and configured to produce perturbation pulses across the MTJ element;
a counter configured to produce a count output based on magnetization state changes sensed for the MTJ element in response to the perturbation pulses; and

an averaging element comprising a digital output node for the circuit, wherein inputs to the averaging element couple to the count output of each of the plurality of analog-to-digital converters.

2. The circuit of claim 1 , wherein the MTJ element comprises a spin transfer torque (STT) MTJ element having a magnetization state alterable by the perturbation pulses.

3. The circuit of claim 1 , wherein the pulse generator is coupled at a reference terminal to a pinned layer terminal of the MTJ element; and
wherein the pulse generator comprises a bidirectional pulse generation element to selectively produce reset pulses and read pulses through the MTJ element in a first direction, and selectively produce the perturbation pulses through the MTJ element in a second direction.

4. The circuit of claim 1 , wherein the MTJ elements of each of the plurality of analog-to-digital converters comprise memory bits in a magnetic random-access memory (MRAM) array.

5. The circuit of claim 4 , wherein bit lines of the MRAM array are coupled to the free layer terminals of corresponding MTJ elements forming the plurality of analog-to-digital converters and to the pulse terminals of corresponding pulse generators of the analog-to-digital converters, wherein source lines of the MRAM array are coupled to word line selection elements that selectively couple pinned layer terminals of the corresponding MTJ elements to the source lines, and wherein the source lines are further coupled to reference terminals of the corresponding pulse generators.

6. An apparatus comprising:
an array of single-channel analog-to-digital converters;
each of the single-channel analog-to-digital converters comprising:
a magnetic tunnel junction (MTJ) element;
a pulse generator configured to:
determine characteristics of perturbation pulses based at least on an analog input, apply the perturbation pulses to the MTJ element;
apply read pulses to the MTJ element to produce indications of magnetization state changes for the MTJ element due to application of the perturbation pulses; and
apply reset pulses to the MTJ elements before application of the perturbation pulses to place the MTJ element into a predetermined magnetization state; and

count circuitry configured to count the indications of the magnetization state changes; and

output circuitry coupled to outputs of the count circuitry from each of the single-channel analog-to-digital converters, and configured to determine a digital output representative of the analog input by at least combining the outputs of the count circuitry.

7. The apparatus of claim 6 , further comprising:
a selector configured to enable a quantity of the single-channel analog-to-digital converters to achieve a linearity target for the digital output based at least in part on estimated variability among probabilistic behavior characteristics of the MTJ elements of the array of single-channel analog-to-digital converters.

8. The apparatus of claim 6 , wherein each of the single-channel analog-to-digital converters further comprise:
a sense amplifier having a sense terminal coupled to a free layer terminal of the MTJ element to provide logic voltages to the count circuitry indicating the magnetization state changes.

9. The apparatus of claim 6 , wherein the pulse generator is configured to receive the analog input as a control input that sets the characteristics of the perturbation pulse among at least one of a pulse width and pulse amplitude.

10. The apparatus of claim 6 , wherein the MTJ element comprises a free layer terminal coupled to the pulse generator, and wherein the MTJ element has a pinned layer terminal coupled to a reference voltage.

11. The apparatus of claim 6 , wherein each of the single-channel analog-to-digital converters further comprise:
a reference voltage adjuster configured to vary the reference voltage to adjust probabilistic behavior characteristics of the MTJ element.

12. The apparatus of claim 6 , wherein the perturbation pulses are alternated with the read pulses and corresponding reset pulses for a predetermined sample period to produce a series of magnetization state changes counted by the count circuitry, and wherein the series of magnetization state changes counted by the count circuitry for each of the single-channel analog-to-digital converters is averaged over the array of single-channel analog-to-digital converters by the output circuitry to determine the digital output for the sample period.

13. A method of analog-to-digital conversion, comprising:
generating perturbation pulses based at least on an analog input, and applying the perturbation pulses to magnetic tunnel junction (MTJ) elements included in a plurality of single-channel analog-to-digital converters;
applying read pulses to the MTJ elements to determine magnetization state changes among the MTJ elements due to application of the perturbation pulses;
applying reset pulses to the MTJ elements before application of the perturbation pulses to place the MTJ elements into predetermined magnetization states;
counting the magnetization state changes associated with each of the plurality of single-channel analog-to-digital converters; and
combine resultant counts for determination of a digital output representative of the analog input.

14. The method of claim 13 , further comprising:
repeating the perturbation pulses alternated with the read pulses and corresponding reset pulses for a predetermined sample period to produce a series of magnetization state changes counted for each of the plurality of single-channel analog-to-digital converters; and
averaging the resultant counts for the sample period to determine the digital output.

15. The method of claim 14 , wherein the digital output representative of the analog input comprises a bit vector having a quantity N of bits corresponding to a resolution of the digital output; and further comprising:
selecting a quantity M of the plurality of single-channel analog-to-digital converters to provide (2^N)/M bits in the sample period as the resultant counts.

16. The method of claim 13 , further comprising:
applying the perturbation pulses and the read pulses to free layer terminals of the MTJ elements as corresponding voltage pulses with first polarities;
applying the reset pulses to the free layer terminals of the MTJ elements as reset voltage pulses with second polarities opposite of the first polarities; and
wherein pinned layer terminals of the MTJ elements are coupled to reference voltages at least during application of the perturbation pulses, the read pulses, and the reset pulses.

17. The method of claim 16 , further comprising:
varying the reference voltages to adjust probabilistic behavior characteristics of the MTJ elements from the perturbation pulses.

18. An analog-to-digital conversion system, comprising:
a magnetic random-access memory (MRAM) array formed from rows of data storag

Assignees

• Sandisk Technologies Llc

Inventors

• Choi Won Ho

Classifications

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H01L27/222

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title