Electronic gate enhancement of Schottky junction solar cells

Patent metadata

Field	Value
Publication number	US-9331217-B2
Application number	US-201113580205-A
Country	US
Kind code	B2
Filing date	Apr 27, 2011
Priority date	Apr 27, 2010
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

Various systems and methods are provided for Schottky junction solar cells. In one embodiment, a solar cell includes a mesh layer formed on a semiconductor layer and an ionic layer formed on the mesh layer. The ionic layer seeps through the mesh layer and directly contacts the semiconductor layer. In another embodiment, a solar cell includes a first mesh layer formed on a semiconductor layer, a first metallization layer coupled to the first mesh layer, a second high surface area electrically conducting electrode coupled to the first metallization layer by a gate voltage, and an ionic layer in electrical communication with the first mesh layer and the second high surface area electrically conducting electrode. In another embodiment, a solar cell includes a grid layer formed on a semiconductor layer and an ionic layer in electrical communication with the grid layer and the semiconductor layer.

First claim

The invention claimed is:

1. A solar cell comprising:
a semiconductor layer having a first side and a second side;
a first mesh layer formed on the first side of the semiconductor layer, wherein the first mesh layer includes a porous mesh of nanotubes;
a first metallization layer in direct contact with at least a portion of the first mesh layer;
an electrode coupled to the first metallization layer by a gate voltage source;
a second metallization layer disposed on the second side of the semiconductor layer; and
an ionic layer,
wherein the electrode is physically separated from the first metallization layer and the second metallization layer, such that the electrode is in electrical communication with the first mesh layer via the ionic layer.

2. The solar cell of claim 1 , wherein a built-in potential of a junction of the first mesh layer and the semiconductor layer is responsive to a voltage applied by the gate voltage source.

3. The solar cell of claim 1 , wherein an interface dipole a junction of the first mesh layer and the semiconductor layer is responsive to a voltage applied by the gate voltage source.

4. The solar cell of claim 1 , wherein the gate voltage source includes a plurality of solar cells.

5. The solar cell of claim 1 , wherein the first metallization layer forms a first electrode and the electrode forms a second electrode isolated from the semiconductor layer.

6. The solar cell of claim 1 , wherein the first metallization layer is insulated from the semiconductor layer by an insulating layer.

7. The solar cell of claim 1 , wherein the first metallization layer directly contacts the semiconductor layer.

8. The solar cell of claim 1 , wherein the first mesh layer includes a graphene layer.

9. The solar cell of claim 1 , wherein the first mesh layer includes semiconducting nanowires.

10. The solar cell of claim 1 , wherein the first mesh layer includes metallic nanowires.

11. The solar cell of claim 1 , wherein a series resistance of the solar cell is responsive to a voltage applied by the gate voltage source.

12. The solar cell of claim 1 , wherein the first mesh layer includes a metallic grid.

13. The solar cell of claim 1 , wherein the first mesh layer includes a semiconductor grid.

14. A solar cell comprising:
an article, comprising:
a first mesh layer comprising a porous mesh of nanotubes;
a semiconductor layer, wherein at least a portion of the semiconductor layer is positioned to form a Schottky junction with at least a portion of the first mesh layer;
a first metallization layer electrically coupled to the first mesh layer;
a second metallization layer electrically coupled to the semiconductor layer; and
an ionic conductor layer; and

an electrode physically separated from the article, wherein the electrode is electrically coupled to the first metallization layer or the second metallization layer by a voltage source, and wherein the electrode is coupled to the first mesh layer and/or the semiconductor layer by the ionic conductor layer.

15. The solar cell of claim 14 , wherein the ionic conductor layer does not participate in reduction-oxidation reactions during operation of the solar cell.

16. The solar cell of claim 14 , wherein a surface of the semiconductor layer has been modified to change a surface state density, thereby increasing a range of a built-in potential responsive to a voltage applied by the voltage source.

17. The solar cell of claim 14 , wherein the solar cell generates power when a surface of the semiconductor layer is illuminated by solar radiation.

18. The solar cell of claim 14 , wherein the first mesh layer is transparent.

19. The solar cell of claim 14 , wherein the first mesh layer is sufficiently porous to permit access of the ionic conductor layer to both a surface of the semiconductor layer and portions of the first mesh layer that contact the surface of the semiconductor layer.

20. The solar cell of claim 16 , wherein the semiconductor surface has been modified after the first mesh layer is formed on the semiconductor layer.

Assignees

• Rinzler Andrew Gabriel
• Wadhwa Pooja
• Guo Jing
• Seol Gyungseon
• Univ Florida

Inventors

• Rinzler Andrew Gabriel
• Wadhwa Pooja
• Guo Jing
• Seol Gyungseon

Classifications

• H10F10/18 Primary

  Photovoltaic cells having only Schottky potential barriers · CPC title

• H10F19/00

  Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules · CPC title

• H10F77/20

  Electrodes · CPC title

• H10F77/215 Primary

  Geometries of grid contacts · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title