Three-dimensional mask model for photolithography simulation

Patent metadata

Field	Value
Publication number	US-10198549-B2
Application number	US-201615174732-A
Country	US
Kind code	B2
Filing date	Jun 6, 2016
Priority date	Aug 14, 2007
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

First claim

What is claimed is:

1. A method comprising:
obtaining a plurality of kernels to adapt a thin mask transmission corresponding to a mask design layout for a physical an optical mask configured to create a device pattern for optical projection onto a substrate, to a mask 3D transmission;
combining, by a hardware computer system, the thin mask transmission and the plurality of kernels to create a mask 3D transmission corresponding to the mask design layout; and
producing electronic data, using the mask 3D transmission, used to create the optical mask for creating the device pattern,
where the electronic data, or information derived therefrom, is configured to guide manufacture of the physical optical mask.

2. The method of claim 1 , wherein the kernels are independent of the layout of any particular mask.

3. The method of claim 1 , further comprising applying a filtering step to generate the plurality of kernels for combination with the thin mask transmission to create the mask 3D transmission.

4. The method of claim 1 , further comprising applying, by the hardware computer system, a thin mask model to the mask design layout to create the thin mask transmission.

5. The method of claim 1 , further comprising applying, by the hardware computer system, at least an optical model to the mask 3D transmission to create an image corresponding to the mask design layout.

6. The method of claim 1 , wherein the kernels are for transverse electric (TE) polarization and transverse magnetic (TM) polarization.

7. The method of claim 1 , wherein obtaining the plurality of kernels further comprises:
receiving a mask topography structure for the mask design layout;
performing a rigorous simulation to simulate a near-field; and
deriving the plurality of kernels from the near-field.

8. The method of claim 1 , wherein the mask 3D transmission is in a spatial domain form.

9. A non-transitory computer readable medium having instructions stored thereon which, when executed by a computer, are configured to cause the computer to at least:
obtain a plurality of edge-based kernels to adapt a thin mask transmission corresponding to a mask design layout for a physical optical mask configured to create a device pattern for optical projection onto a substrate, to a mask 3D transmission;
combine the thin mask transmission and the plurality of kernels to create a mask 3D transmission corresponding to the mask design layout; and
produce electronic data, using the mask 3D transmission, used to create the optical mask for creating the device pattern,
where the electronic data, or information derived therefrom, is configured to guide manufacture of the physical optical mask.

10. The computer-readable medium of claim 9 , wherein the kernels are independent of the layout of any particular mask.

11. The computer-readable medium of claim 9 , wherein the instructions are further configured to cause the computer to apply a filtering step to generate the plurality of kernels for combination with the thin mask transmission to create the mask 3D transmission.

12. The computer-readable medium of claim 9 , wherein the instructions are further configured to cause the computer to apply a thin mask model to the mask design layout to create the thin mask transmission.

13. The computer-readable medium of claim 9 , wherein the instructions are further configured to cause the computer to apply at least an optical model to the mask 3D transmission to create an image corresponding to the mask design layout.

14. The computer-readable medium of claim 9 , wherein the kernels are for transverse electric (TE) polarization and transverse magnetic (TM) polarization.

15. The computer-readable medium of claim 9 , wherein the instructions configured to obtain the plurality of kernels are further configured to cause the computer to:
receive a mask topography structure for the mask design layout;
perform a rigorous simulation to simulate a near-field; and
derive the plurality of kernels from the near-field.

16. A non-transitory computer readable medium having instructions stored thereon to perform mask topography effect modeling on a mask design layout and which, when executed by a computer, are configured to cause the computer to at least:
apply a thin mask model to the mask design layout to create a thin mask transmission;
apply a thick mask model to the mask design layout to generate a mask 3D residual, the thick mask model comprising a plurality of edge-based kernels; and
produce electronic data, using the mask 3D transmission, used to create a physical optical mask configured to create a pattern for an integrated circuit,
where the electronic data, or information derived therefrom, is configured to guide manufacture of the physical optical mask.

17. The computer readable medium of claim 16 , wherein the instructions are further configured to cause the computer to apply a filtering step to generate the plurality of kernels.

18. The computer readable medium of claim 16 , wherein the kernels are independent of the layout of any particular mask.

19. The computer readable medium of claim 16 , wherein the kernels are for transverse electric (TE) polarization and transverse magnetic (TM) polarization.

20. The computer readable medium of claim 16 , wherein the instructions are further configured to cause the computer to:
receive a mask topography structure for the mask design layout;
perform a rigorous simulation to simulate a near-field; and
derive the plurality of kernels from the near-field.

21. A non-transitory computer readable medium having instructions stored thereon which, when executed by a computer, are configured to cause the computer to at least:
obtain a plurality of kernels to adapt a thin mask transmission corresponding to a mask design layout for a physical optical mask configured to create a device pattern for optical projection onto a substrate, to a mask 3D transmission;
combine the thin mask transmission and the plurality of kernels to create a mask 3D transmission corresponding to the mask design layout; and
produce electronic data, using the mask 3D transmission, used to create the optical mask for creating the device pattern,
where the electronic data, or information derived therefrom, is configured to guide manufacture of the physical optical mask.

22. The computer readable medium of claim 21 , wherein the kernels are independent of the layout of any particular mask.

23. The computer readable medium of claim 21 , wherein the instructions are further configured to cause the computer to apply a filtering step to generate the plurality of kernels for combination with the thin mask transmission to create the mask 3D transmission.

24. The computer readable medium of claim 21 , wherein the instructions are further configured to cause the computer to apply a thin mask model to the mask design layout to create the thin mask transmission.

25. The computer readable medium of claim 21 , wherein the instructions are further configured to cause the computer to apply at least an optical model to the mask 3D transmission to create an image corresponding to the mask design layout.

26. The computer readable medium of claim 21 , wherein the kernels are for transverse electric (TE) polarization and transverse magnetic (TM) polarization.

27. The computer readable medium of claim 21 , wherein the instructions configured

Assignees

• Asml Netherlands Bv

Inventors

• Liu Peng
• Cao Yu
• Chen Luoqi
• Ye Jun

Classifications

• G06F30/39

  Circuit design at the physical level (physical level design for reconfigurable circuits G06F30/347) · CPC title

• G03F7/705

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title

• G06F30/398 Primary

  Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title

• G06F17/5081 Primary

  Physics · mapped topic

• G06F17/5009

  Physics · mapped topic