Silicon-based component with at least one chamfer and its fabrication method

Patent metadata

Field	Value
Publication number	US-10197973-B2
Application number	US-201615171012-A
Country	US
Kind code	B2
Filing date	Jun 2, 2016
Priority date	Jun 25, 2015
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

The invention relates to a silicon-based component with at least one chamfer formed from a method combining at least one oblique side wall etching step with a “Bosch” etching of vertical side walls, thereby enabling aesthetic improvement and improvement in the mechanical strength of components formed by micromachining a silicon-based wafer.

First claim

What is claimed is:

1. A method for fabricating a micromechanical component made of a silicon-based material comprising:
taking a silicon-based substrate;
forming a mask pierced with holes on a horizontal portion of the substrate;
etching, in an etching chamber, predetermined oblique walls, in part of a thickness of the substrate, from the holes in the mask, in order to form upper chamfered surfaces of the micromechanical component, by continually flowing both an etching gas and a passivation gas simultaneously in the etching chamber during the etching of the predetermined oblique walls while pulsing flow of at least one of the etching gas and the passivation gas;
etching, in the etching chamber, substantially vertical walls, in at least part of the thickness of the substrate, from a bottom of an etch made in the etching of the redetermined oblique walls, in order to form peripheral walls of the micromechanical component beneath the upper chamfered surfaces; and
releasing the micromechanical component from the substrate and the mask.

2. The method according to claim 1 , wherein the etching of the predetermined oblique walls is achieved by mixing the etching gas and the passivation gas in the etching chamber in order to form the predetermined oblique walls.

3. The method according to claim 2 , wherein, in the etching of the redetermined oblique walls, the continuous etching and passivation gas flows are pulsed to enhance passivation at a bottom level.

4. The method according to claim 1 , wherein the etching of the substantially vertical walls is achieved by alternating an etching gas flow and a passivation gas flow in the etching chamber in order to form the substantially vertical walls.

5. The method according to claim 1 , wherein, between the etching of the substantially vertical walls and the releasing of the micromechanical component, the method further comprises:
forming a protective layer on the predetermined oblique walls and the substantially vertical walls, leaving a bottom of an etch made in the etching of the substantially vertical walls without any protective layer; and
etching, in the etching chamber, second predetermined oblique walls, in a remaining thickness of the substrate from the bottom of the etch made in the etching of the substantially vertical walls without any protective layer, in order to form lower chamfered surfaces of the micromechanical component.

6. The method according to claim 5 , wherein the etching of the second predetermined oblique walls is achieved by mixing the etching gas and the passivation gas in the etching chamber in order to form the second predetermined oblique walls.

7. The method according to claim 6 , wherein, in the etching of the second predetermined oblique walls, the continuous etching and passivation gas flows are pulsed to enhance etching at a bottom level.

8. The method according to claim 5 , wherein the forming of the protective layer comprises:
oxidizing the predetermined oblique walls and the substantially vertical walls to form a protective silicon oxide layer; and
directionally etching the protective silicon oxide layer in order to selectively remove only a part of the protective layer from the bottom of the etch made in the etching of the substantially vertical walls.

9. The method according to claim 5 , wherein before the releasing of the micromechanical component, the method comprises:
filling a cavity created during the etchings of the micromechanical component, formed by an upper chamfered surface, a peripheral wall, and a lower chamfered surface, with a metal or metal alloy in order to provide an attachment to the micromechanical component.

10. The method according to claim 1 , wherein an angle between the substantially vertical walls and the predetermined oblique walls is more than 10°.

11. The method according to claim 1 , wherein an angle between the substantially vertical walls and the predetermined oblique walls is greater than 10° and less than 45°.

12. The method according to claim 1 , wherein an angle between the substantially vertical walls and the predetermined oblique walls is greater than 20° and less than 40°.

13. The method according to claim 1 , wherein in the etching of the predetermined oblique walls, the pulsing includes pulsing both the flow of the etching gas and the flow of the passivation gas at a same time during the continuous flowing of both the etching gas and the passivation gas simultaneously in the etching chamber.

Assignees

• Nivarox Sa

Inventors

• Gandelhman Alex

Classifications

• B81C99/008

  separating the processed structure from a mother substrate · CPC title

• B81C1/00087

  Holes · CPC title

• G04B19/12

  Selection of materials for dials or graduations {markings} · CPC title

• C23F1/00

  Etching metallic material by chemical means (manufacture of printing surfaces B41C; manufacture of printed circuits H05K) · CPC title

• B81B2201/035

  Microgears · CPC title