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US-9841858-B2 · Dec 12, 2017 · US
US10197817B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10197817-B2 |
| Application number | US-201615507122-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 7, 2016 |
| Priority date | Oct 30, 2015 |
| Publication date | Feb 5, 2019 |
| Grant date | Feb 5, 2019 |
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A substrate and a manufacturing method thereof, and a display device are provided. The substrate comprises a base substrate ( 101 ), a metal black matrix ( 111 ) and an anti-reflection pattern ( 112 A, 112 B) for reducing optical reflectivity of the metal black matrix ( 111 ), which are arranged on the base substrate ( 101 ), and the anti-reflection pattern ( 112 A, 112 B) is arranged on a side of the metal black matrix ( 111 ) close to a light emission side of the substrate. The anti-reflection pattern ( 112 A, 112 B) reduces reflectivity of the metal black matrix ( 111 ) on outside ambient light, increases a display contrast of a display device that includes the substrate, and thus improves display quality of the pictures.
Opening claim text (preview).
The invention claimed is: 1. A substrate, comprising a base substrate, a metal black matrix and an anti-reflection pattern for reducing optical reflectivity of the metal black matrix, which are arranged on the base substrate, and the anti-reflection pattern being arranged on a side of the metal black matrix close to a light emission side of the substrate, wherein the anti-reflection pattern is a translucent anti-reflection pattern, and the translucent anti-reflection pattern is formed by a mixture of indium tin oxide, elemental indium, and elemental tin. 2. The substrate according to claim 1 , wherein an orthographic projection of the metal black matrix on the base substrate falls into a region of an orthographic projection of the translucent anti-reflection pattern on the base substrate. 3. The substrate according to claim 2 , wherein the orthographic projection of the metal black matrix on the base substrate overlaps with the orthographic projection of the translucent anti-reflection pattern on the base substrate. 4. The substrate according to claim 2 , wherein a thickness range of the translucent anti-reflection pattern is 50 to 200 nm. 5. The substrate according to claim 1 , wherein a thickness range of the metal black matrix is 50 to 200 nm. 6. The substrate according to claim 1 , further comprising: a common electrode and a common electrode line connected to the common electrode, the common electrode line being arranged on a same layer with the metal black matrix and formed by a same material with the metal black matrix. 7. The substrate according to claim 1 , wherein the substrate is an array substrate or a color filter substrate. 8. A display device, comprising the substrate according to claim 1 . 9. A manufacturing method of a substrate, comprising: providing a base substrate; forming on the base substrate a metal black matrix and an anti-reflection pattern for reducing optical reflectivity of the metal black matrix, the anti-reflection pattern being arranged on a side of the metal black matrix close to a light emission side of the substrate, wherein the anti-reflection pattern is a translucent anti-reflection pattern, and the translucent anti-reflection pattern is formed by a mixture of indium tin oxide, elemental indium, and elemental tin. 10. The manufacturing method of the substrate according to claim 9 , wherein the metal black matrix and the translucent anti-reflection pattern are formed by a single patterning process. 11. The manufacturing method of the substrate according to claim 10 , wherein the substrate is an array substrate, and the forming the metal black matrix and the translucent anti-reflection pattern includes: depositing a metal film and an indium tin oxide film; patterning the metal film and the indium tin oxide film by a single patterning process to form the metal black matrix and the indium tin oxide pattern; treating the indium tin oxide pattern by using a hydrogen plasma, converting indium tin oxide in the indium tin oxide pattern partially to elemental indium and elemental tin to form the translucent anti-reflection pattern formed by the mixture of indium tin oxide, elemental indium and elemental tin. 12. The manufacturing method of the substrate according to claim 11 , wherein a duration of treating the indium tin oxide pattern by using the hydrogen plasma is 0.5 to 2 minutes. 13. The manufacturing method of the substrate according to claim 10 , wherein the substrate is a color filter substrate, and the forming the metal black matrix and the translucent anti-reflection pattern include: depositing an indium tin oxide film; treating the indium tin oxide film by using a hydrogen plasma, converting indium tin oxide in the indium tin oxide film partially to elemental indium and elemental tin to form a translucent anti-reflection film formed by the mixture of indium tin oxide, elemental indium and elemental tin; depositing a metal film; patterning the translucent anti-reflection film and the metal film by a single patterning process to form the translucent anti-reflection pattern and the metal black matrix. 14. The manufacturing method of the substrate according to claim 13 , wherein a duration of treating the indium tin oxide film by using the hydrogen plasma is 0.5 to 2 minutes.
Addressing, scanning or driving the display screen or processing steps related thereto · CPC title
Constructional details, not otherwise provided for in this subclass · CPC title
Electricity · mapped topic
Electricity · mapped topic
based on light coupled out of a light guide, e.g. due to scattering, by contracting the light guide with external means · CPC title
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