Light emitting element

Patent metadata

Field	Value
Publication number	US-10193010-B2
Application number	US-201715581686-A
Country	US
Kind code	B2
Filing date	Apr 28, 2017
Priority date	Jul 12, 2016
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

A light emitting element includes:
a light emitting part that is formed on a front surface side of a semi-insulating substrate; and
a light receiving part that is formed on the front surface side, that shares a semiconductor layer with the light emitting part, and that receives light propagating in a lateral direction through the semiconductor layer from the light emitting part, wherein
anode electrodes and cathode electrodes of the light emitting part and the light receiving part are formed on the front surface side in a state in which the anode electrodes are separated from each other and the cathode electrodes are separated from each other.

First claim

What is claimed is:

1. A light emitting element comprising:
a semi-insulating substrate;
a light emitting part that is formed on a front surface side of the semi-insulating substrate; and
a light receiving part that is formed on the front surface side, that shares a semiconductor layer with the light emitting part, that receives light propagating in a lateral direction through the semiconductor layer from the light emitting part, and that is configured to output current corresponding to the received light,
a first anode electrode pad connected to the light emitting part,
a first cathode electrode pad connected to the light emitting part,
a second anode electrode pad connected to the light receiving part, and
a second cathode electrode pad connected to the light receiving part,
wherein the first anode electrode pad, the first cathode electrode pad, the second anode electrode pad, and the second cathode electrode pad are separated from each other and are formed on the front surface side of the semi-insulating substrate.

2. The light emitting element according to claim 1 , wherein
the light emitting part and the light receiving part share a quantum layer, and
a current blocking region is formed between the light emitting part and the light receiving part from the front surface side to a depth that does not reach the quantum layer.

3. The light emitting element according to claim 1 , wherein
the light emitting part and the light receiving part share a quantum layer, and
a current blocking region is formed between the light emitting part and the light receiving part from the front surface side to a depth that exceeds the quantum layer.

4. The light emitting element according to claim 1 , wherein
the light emitting part and the light receiving part share a quantum layer, and
a current blocking region is formed between the light emitting part and the light receiving part from the front surface side to a depth that reaches the semi-insulating substrate.

5. The light emitting element according to claim 2 , wherein
the current blocking region is formed with at least one of (i) an ion implantation region formed by implanting predetermined ions into the semiconductor layer and (ii) a recess portion provided in the semiconductor layer.

6. The light emitting element according to claim 3 , wherein
the current blocking region is formed with at least one of (i) an ion implantation region formed by implanting predetermined ions into the semiconductor layer and (ii) a recess portion provided in the semiconductor layer.

7. The light emitting element according to claim 4 , wherein
the current blocking region is formed with at least one of (i) an ion implantation region formed by implanting predetermined ions into the semiconductor layer and (ii) a recess portion provided in the semiconductor layer.

8. The light emitting element according to claim 1 , wherein
the light emitting part and the light receiving part share a quantum layer, and
a groove is formed between the light emitting part and the light receiving part from a back surface side of the semi-insulating substrate to a depth that exceeds a thickness of the semi-insulating substrate and does not exceed the quantum layer.

9. The light emitting element according to claim 2 , wherein
the light emitting part and the light receiving part share a quantum layer, and
a groove is formed between the light emitting part and the light receiving part from a back surface side of the semi-insulating substrate to a depth that exceeds a thickness of the semi-insulating substrate and does not exceed the quantum layer.

10. The light emitting element according to claim 3 , wherein
the light emitting part and the light receiving part share a quantum layer, and
a groove is formed between the light emitting part and the light receiving part from a back surface side of the semi-insulating substrate to a depth that exceeds a thickness of the semi-insulating substrate and does not exceed the quantum layer.

11. The light emitting element according to claim 4 , wherein
the light emitting part and the light receiving part share a quantum layer, and
a groove is formed between the light emitting part and the light receiving part from a back surface side of the semi-insulating substrate to a depth that exceeds a thickness of the semi-insulating substrate and does not exceed the quantum layer.

12. The light emitting element according to claim 5 , wherein
the light emitting part and the light receiving part share a quantum layer, and
a groove is formed between the light emitting part and the light receiving part from a back surface side of the semi-insulating substrate to a depth that exceeds a thickness of the semi-insulating substrate and does not exceed the quantum layer.

13. The light emitting element according to claim 1 , wherein the light emitting part and the light receiving part are at least partially electrically separated from each other.

14. The light emitting element according to claim 1 , further comprising:
a voltage conversion unit that is connected to the light receiving part and that converts a current, which is generated by the light received by the light receiving part, into a voltage.

15. The light emitting element according to claim 1 , wherein
the first anode electrode pad connected to the light emitting part, the first cathode electrode pad connected to the light emitting part, the second anode electrode pad connected to the light receiving part, and the second cathode electrode pad connected to the light receiving part are formed, via an insulating film on a front surface of the semi-insulating substrate.

16. The light emitting element according to claim 15 , further comprising
a first p-side electrode formed on the light emitting part, and
a second p-side electrode formed on the light receiving part,
wherein the first p-side electrode is connected to the first anode electrode pad, and the second p-side electrode is connected to the second anode electrode pad.

17. The light emitting element according to claim 1 , further comprising
a first p-side electrode formed on the light emitting part, and
a second p-side electrode formed on the light receiving part,
wherein the first p-side electrode is connected to the first anode electrode pad, and the second p-side electrode is connected to the second anode electrode pad.

18. The light emitting element according to claim 17 , wherein
the first p-side electrode is formed on a top of the light emitting part, and
the second p-side electrode is formed on a top of the light receiving part.

19. The light emitting element according to claim 18 , wherein
the first anode electrode pad is formed on a bottom side of the light emitting part, and
the second anode electrode pad is formed on a bottom side of the light receiving part.

20. The light emitting element according to claim 17 , wherein
the first p-side electrode is connected to the first anode electrode pad via a wiring formed on a side surface of the light emitting part, and
the second p-side electrode is connected to the second anode electrode pad via a wiring formed on a side surface of the light receiving part.

Assignees

• Fuji Xerox Co Ltd

Inventors

• Jogan Naoki
• Sakurai Jun
• Murakami Akemi
• Kondo Takashi
• Hayakawa Junichiro

Classifications

• H01S5/04257

  having positive and negative electrodes on the same side of the substrate · CPC title

• H01S5/04256

  characterised by the configuration · CPC title

• H01S5/0207

  Substrates having a special shape · CPC title

• H01S5/18313

  by oxidizing at least one of the DBR layers · CPC title

• H01S5/0265

  Intensity modulators (intra-cavity modulators H01S5/0625) · CPC title