Deposition of metal borides

Patent metadata

Field	Value
Publication number	US-10190213-B2
Application number	US-201615135333-A
Country	US
Kind code	B2
Filing date	Apr 21, 2016
Priority date	Apr 21, 2016
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.

First claim

We claim:

1. A method of forming a film having a metal boride comprising:
providing a substrate for processing in a reaction chamber;
performing a metal precursor deposition onto the substrate, the performing the metal precursor deposition step comprises:
pulsing a metal precursor onto the substrate; and
purging an excess of the metal precursor from the reaction chamber; and

performing a decaborane precursor deposition onto the substrate, the performing the decaborane precursor deposition step comprises:
pulsing a decaborane precursor onto the substrate, wherein prior to entering into the reaction chamber, the decaborane precursor is kept at a temperature not exceeding 65° C.; and
purging an excess of the decaborane precursor from the reaction chamber;

wherein the metal precursor comprises one of: titanium tetrachloride (TiCl 4 ), niobium pentachloride (NbCl 5 ), tantalum pentafluoride (TaF 5 ), and niobium pentafluoride (NbF 5 ) and wherein prior to entering the reaction chamber, the metal halide is kept at temperature ranging between 50° C. and 120° C.;
wherein a reaction between the metal halide precursor and the decaborane precursor forms a film comprising at least one of: titanium boride (TiB), tantalum boride (TaB), or niobium boride (NbB);
wherein the metal precursor deposition step is repeated a predetermined number of times; and
wherein the decaborane precursor deposition step is repeated a predetermined number of times.

2. The method of claim 1 , wherein a temperature of the reaction chamber is greater than 300° C.

3. The method of claim 2 , wherein the temperature of the reaction chamber is greater than 375° C.

4. The method of claim 1 , wherein a pressure of the reaction chamber ranges between 0.1 and 10 Torr.

5. The method of claim 1 , wherein the pulsing the metal precursor has a duration of 0.1 and 5 seconds.

6. The method of claim 1 , wherein the pulsing the decaborane precursor has a duration of 0.05 and 20 seconds.

7. The method of claim 1 , wherein purging the excess of the metal precursor comprises purging the reaction chamber with at least one of: nitrogen (N 2 ), argon (Ar), helium (He), hydrogen (H 2 ), or other rare gases.

8. The method of claim 1 , wherein purging the excess of the decaborane precursor comprises purging the reaction chamber with at least one of: nitrogen (N 2 ), argon (Ar), helium (He), hydrogen (H 2 ), or other rare gases.

9. The method of claim 1 , wherein the film has a concentration of Boron from about 30 to about 80 at. %.

10. The method of claim 1 , wherein the film has a concentration of a metal from about 20 to about 70 at. %.

11. The method of claim 1 , wherein the film has a concentration of Oxygen of less than 5 at. %.

12. The method of claim 1 , wherein the film has a concentration of Hydrogen of less than 5 at. %.

13. The method of claim 1 , wherein the film has a concentration of a halide of less than 5 at. %.

14. A method of forming a film having a metal boride comprising:
providing a substrate for processing in a reaction chamber;
exposing the substrate to a metal halide precursor, wherein prior to entering the reaction chamber, the metal halide is kept at temperature ranging between 50° C. and 120° C.;
exposing the substrate with a purge gas after exposing the substrate to the metal halide precursor;
exposing the substrate to a decaborane precursor, wherein prior to entering into the reaction chamber, the decaborane precursor is kept at a temperature not exceeding 65° C.; and
exposing the substrate with the purge gas after exposing the substrate to the decaborane precursor;
wherein the metal halide precursor exposing step is repeated a predetermined number of times; and
wherein the decaborane precursor exposing step is repeated a predetermined number of times.

15. The method of claim 14 , wherein the purge gas comprises at least one of: nitrogen (N 2 ), argon (Ar), helium (He), hydrogen (H 2 ), or other rare gases.

16. The method of claim 14 , wherein a temperature of the reaction chamber is greater than 300° C.

17. The method of claim 16 , wherein the temperature of the reaction chamber is greater than 375° C.

18. The method of claim 14 , wherein exposing the substrate to the metal halide precursor comprises pulsing the metal halide precursor.

19. The method of claim 14 , wherein exposing the substrate to the decaborane precursor comprises pulsing the decaborane precursor.

20. The method of claim 14 , wherein exposing the substrate to the purge gas comprises pulsing the purge gas.

Assignees

• Asm Ip Holding Bv

Inventors

• Zhu chiyu
• Shrestha Kiran
• Haukka Suvi

Classifications

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/38 Primary

  Borides · CPC title

• C23C16/45523

  Pulsed gas flow or change of composition over time · CPC title

• C23C16/4408

  by purging residual gases from the reaction chamber or gas lines · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title