Electromechanical transducer and method of producing the same

Patent metadata

Field	Value
Publication number	US-10189050-B2
Application number	US-201615348794-A
Country	US
Kind code	B2
Filing date	Nov 10, 2016
Priority date	Apr 6, 2011
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

An electromechanical transducer includes a first electrode; a silicon oxide film disposed on the first electrode; and a vibration film including a silicon nitride film disposed on the silicon oxide film with a space therebetween and a second electrode disposed on the silicon nitride film so as to oppose the first electrode.

First claim

What is claimed is:

1. An electromechanical transducer of a capacitive type comprising:
a substrate;
a first member stacked in a stacking direction on the substrate, the first member including a first electrode and a first insulating film;
a second member provided in the stacking direction on the substrate with the first member and a space therebetween, the second member including a second electrode and a second insulating film; and
a voltage-applying unit,
wherein the first insulating film included in the first member is positioned closer to the space than the first electrode is,
wherein the second insulating film included in the second member,
wherein the first insulating film includes silicon oxide and the second insulating film includes silicon nitride,
wherein the voltage-applying unit is configured to apply a voltage so that a potential of the first electrode is lower than a potential of the second electrode, and
wherein a root mean surface roughness of the first electrode is 2 nm or less.

2. The electromechanical transducer according to claim 1 , wherein the substrate is a silicon substrate.

3. The electromechanical transducer according to claim 1 , wherein the substrate and the first electrode have a third insulating film provided therebetween.

4. The electromechanical transducer according to claim 1 , wherein the substrate is a glass substrate.

5. The electromechanical transducer according to claim 1 , wherein the first insulating film is in contact with the space and the first electrode.

6. The electromechanical transducer according to claim 1 , wherein the silicon nitride film is in contact with the space and the second electrode.

7. The electromechanical transducer according to claim 1 , wherein the first insulating film has a thickness equal to or higher than 50 nm and equal to or lower than 200 nm in the stacking direction.

8. The electromechanical transducer according to claim 1 , wherein the silicon nitride film has a thickness equal to or higher than 300 nm and equal to or lower than 800 nm in the stacking direction.

9. The electromechanical transducer according to claim 1 , wherein the space has a thickness equal to or higher than 50 nm and equal to or lower than 300 nm in the stacking direction.

10. The electromechanical transducer according to claim 1 , wherein the second electrode includes silicon nitride films each being provided on a different one of an upper surface and a lower surface of the second electrode in the stacking direction.

11. The electromechanical transducer according to claim 1 , wherein the voltage-applying unit is configured to apply a voltage so that a negative voltage is applied to the first electrode.

12. The electromechanical transducer according to claim 1 , wherein the voltage-applying unit is configured to apply a direct current voltage so as to bring about a potential difference between the first electrode and the second electrode.

13. The electromechanical transducer according to claim 1 , wherein the voltage-applying unit is configured to apply a direct current voltage to the first electrode, and apply an alternating current voltage to the second electrode.

14. The electromechanical transducer according to claim 1 , wherein the voltage-applying unit is configured to apply a bias voltage between the first electrode and the second electrode, and apply an alternating current voltage to the first electrode.

15. The electromechanical transducer according to claim 1 , wherein the substrate includes thereon a plurality of cells each including the first member provided over the substrate and the second member provided on the substrate with the first member and the space therebetween, the second member serving as a vibration film.

16. An electromechanical transducer comprising:
a substrate;
a first electrode provided over the substrate;
a first insulating film disposed over the first electrode;
a vibration film provided to face the first insulating film with a space therebetween, the vibration film including a second insulating film and a second electrode; and
a voltage-applying unit configured to apply a voltage between the first electrode and the second electrode,
wherein the voltage-applying unit is configured to apply a voltage so that a potential of the first electrode is lower than a potential of the second electrode, and
wherein the first insulating film includes silicon oxide and the second insulating film includes silicon nitride, and
wherein a root mean surface roughness of the first electrode is 2 nm or less.

17. The electromechanical transducer according to claim 16 , wherein the second insulating film is formed so as to have a tensile stress of greater than 0 MPa and less than or equal to 300 MPa.

18. The electromechanical transducer according to claim 16 , wherein the vibration film includes a third insulating film provided at a part of the second electrode, the part opposing to a part included in the second electrode and facing the space.

19. The electromechanical transducer according to claim 16 , further comprising a current-voltage conversion device configured to convert, into a voltage, a current derived from a change in a distance between the first electrode and the second electrode.

20. The electromechanical transducer according to claim 1 ,
wherein the first electrode is in contact with the first insulating film, and the first insulating film is in contact with a cavity.

21. The electromechanical transducer according to claim 1 ,
wherein a root mean surface roughness of the first insulating film is 2 nm or less.

22. The electromechanical transducer according to claim 16 ,
wherein a root mean surface roughness of the first insulating film is 2 nm or less.

23. The electromechanical transducer according to claim 1 , wherein a variation among the cells in bending is ±2 nm or less.

24. The electromechanical transducer according to claim 1 , wherein a variation among the cells in sensitivity is 1 dB or less.

25. The electromechanical transducer according to claim 1 , further comprising a plurality of elements which has the plurality of cells,
wherein a variation among the elements in effective voltage applied between the first electrode and the second electrode is 0.1 V or less.

26. The electromechanical transducer according to claim 1 ,
wherein a voltage is applied between the first electrode and the second electrode so that the second insulating film is applied with an electric field intensity of 2 MV/cm or less.

Assignees

• Canon Kk

Inventors

• Torashima Kazutoshi
• Akiyama Takahiro
• Tomiyoshi Toshio

Classifications

• H02N1/006

  of the gap-closing type (H02N1/004 takes precedence) · CPC title

• H01L41/332

  Electricity · mapped topic

• H02N1/08 Primary

  with conductive charge carrier, i.e. capacitor machines · CPC title

• H01L41/316

  Electricity · mapped topic

• H01L41/0973

  Electricity · mapped topic