Light emitting element

Patent metadata

Field	Value
Publication number	US-10186638-B2
Application number	US-201715405031-A
Country	US
Kind code	B2
Filing date	Jan 12, 2017
Priority date	May 13, 2015
Publication date	Jan 22, 2019
Grant date	Jan 22, 2019

Abstract

A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.

First claim

The invention claimed is:

1. A light emitting element comprising:
a first conductive type semiconductor layer;
a mesa disposed on the first conductive type semiconductor layer and comprising an active layer and a second conductive type semiconductor layer disposed on the active layer;
a current blocking layer partially disposed on the mesa;
a transparent electrode including a first region located on the current blocking layer to cover the current blocking layer and a second region located on the top surface of the mesa to cover the second conductive type semiconductor layer, the transparent electrode comprising an opening at least partially exposing the current blocking layer;
an insulation layer partially disposed on the mesa;
a first electrode disposed on the insulation layer to be insulated from the second conductive type semiconductor layer and comprising a first electrode pad and a first electrode extension extending from the first electrode pad; and
a second electrode disposed on the current blocking layer and comprising a second electrode pad disposed on the opening of the transparent electrode and a second electrode extension extending from the second electrode pad,
wherein the transparent electrode comprises a non-protrusion portion located on the mesa and separated from the current blocking layer and a protrusion portion protruding inwardly from a side surface of the opening as compared to the non-protrusion portion of the transparent electrode, at least part of the protrusion portion being interposed between the second electrode pad and the current blocking layer;
wherein the mesa comprises at least one groove formed on a side surface thereof such that the first conductive type semiconductor layer is partially exposed through the groove;
wherein the insulation layer at least partially covers a side surface of the groove; and
wherein the first electrode extension comprises an extension contact portion contacting the first conductive type semiconductor layer through the groove.

2. The light emitting element according to claim 1 , wherein the insulation layer covers a side surface of the active layer exposed through the groove.

3. The light emitting element according to claim 2 , wherein the insulation layer further covers a top surface of the active layer exposed through the groove.

4. The light emitting element according to claim 1 , wherein the insulation layer is spaced apart from the transparent electrode.

5. The light emitting element according to claim 1 , wherein the at least one groove comprises a plurality of grooves separated from one another, the plurality of grooves being disposed on one side surface of the light emitting element.

6. The light emitting element according to claim 1 , wherein the first electrode pad comprises a pad contact portion contacting the first conductive type semiconductor layer.

7. The light emitting element according to claim 6 , wherein the pad contact portion and the at least one extension contact portion are disposed on one side surface of the light emitting element.

8. The light emitting element according to claim 1 , wherein the insulation layer comprises at least one enlarged portion covering a side surface of the mesa around the first electrode pad.

9. The light emitting element according to claim 8 , wherein a portion of the insulation layer disposed under the first electrode extension is disposed within a region defined by the side surface of the mesa.

10. The light emitting element according to claim 8 , wherein the first electrode pad comprises a pad contact portion contacting the first conductive type semiconductor layer, the at least one enlarged portion comprises a plurality of enlarged portions that are spaced apart from one another, and the pad contact portion is disposed in a region between the plurality of enlarged portions.

11. The light emitting element according to claim 1 , wherein the at least one groove has an arc shape in a plan view.

12. The light emitting element according to claim 1 , wherein the current blocking layer comprises a pad current blocking layer disposed under the second electrode pad and an extension current blocking layer disposed under the second electrode extension, and the pad current blocking layer is at least partially exposed through the opening of the transparent electrode.

13. The light emitting element according to claim 12 , wherein the side surface of the opening of the transparent electrode is disposed on the pad current blocking layer.

14. The light emitting element according to claim 12 , wherein the side surface of the opening of the transparent electrode is spaced apart from the pad current blocking layer.

15. The light emitting element according to claim 12 , wherein the transparent electrode is interposed between the second electrode extension and the extension current blocking layer.

16. The light emitting element according to claim 12 , wherein an interface between the second electrode pad and the second electrode extension is located in a first portion on at least one of x (+), x (−), y (+) and y(−) axes or first to fourth quadrants in a coordinate system having an origin at a central portion of the pad current blocking layer and an x-axis and an y-axis that are perpendicular to each other, and the protrusion is located in a different portion that is different from the first portion, the different portion being on the at least one of the x (+), x (−),y (+) and y (−) axes or the first to fourth quadrants excluding the first portion.

17. The light emitting element according to claim 16 , wherein the first electrode pad is disposed adjacent to one side of the light emitting element and the first electrode extension extends from the first electrode pad toward the other side of the light emitting element, and wherein the second electrode pad is disposed adjacent to the other side of the light emitting element and the second electrode extension extends from the second electrode pad toward the one side of the light emitting element.

18. A light emitting element comprising:
a first conductive type semiconductor layer;
a mesa disposed on the first conductive type semiconductor layer and comprising an active layer and a second conductive type semiconductor layer disposed on the active layer;
a current blocking layer disposed on the top surface of the mesa;
a transparent electrode including a first region located on the current blocking layer positioned to cover the current blocking layer and a second region located on the mesa to cover the second conductive type semiconductor layer, the transparent electrode comprising an opening at least partially exposing the current blocking layer;
an insulation layer partially disposed on the mesa;
a first electrode disposed on the insulation layer to be insulated from the second conductive type semiconductor layer and comprising a first electrode pad and a first electrode extension extending from the first electrode pad; and
a second electrode disposed on the current blocking layer and comprising a second electrode pad disposed on the opening of the transparent electrode and a second electrode extension extending from the second electrode pad, and
wherein the mesa comprises a groove formed on a side surface of the mesa such that the first conductive type semiconductor layer is partially exposed through the groove, the groove
wherein the first electrode extension comprises an extension contact portion contacting the first conductive type semiconductor layer through the groove; and
wherein the mesa has two diff

Assignees

• Seoul Viosys Co Ltd

Inventors

• Kim Ye Seul
• Kim Kyoung Wan
• Oh Sang Hyun
• Suh Duk Il
• Woo Sang Won
• Kim Ji Hye

Classifications

• F21S45/435

  circulating the gas within a closed system · CPC title

• G02F1/133603

  with LEDs · CPC title

• G02F1/133606

  including a specially adapted diffusing, scattering or light controlling members · CPC title

• F21K9/232

  specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb · CPC title

• F21S41/143

  the main emission direction of the LED being parallel to the optical axis of the illuminating device · CPC title