Method of forming a light emitting diode structure and a light diode structure

Patent metadata

Field	Value
Publication number	US-10186635-B2
Application number	US-201514918342-A
Country	US
Kind code	B2
Filing date	Oct 20, 2015
Priority date	May 18, 2010
Publication date	Jan 22, 2019
Grant date	Jan 22, 2019

Abstract

A method of forming a vertical III-nitride based light emitting diode structure 5 and a vertical III-nitride based light emitting diode structure can be provided. The method comprises forming a III-nitride based light emitting structure on a silicon-oninsulator (SOI) substrate; forming a metal-based electrode structure on the III-nitride based light emitting structure; and removing the SOI substrate by a layer transfer process such that the metal-based electrode structure functions as a metal-based 10 substrate of the light emitting structure.

First claim

The invention claimed is:

1. A vertical III-nitride based light emitting diode structure, the structure comprising:
a metal-based substrate; and
a III-nitride based light emitting structure for light emission formed on the metal-based substrate, the III-nitride based light emitting structure comprising a light-generating layer comprising a plurality of III-nitride heterostructures,
wherein a Group III metal content in the light-generating layer is inhomogeneously formed in response to creation of a patterned silicon-on-insulator (SOI) substrate comprising one or more silicon overlayers having a thickness ranging from about 10 nm to about 300 nm and a patterned buried oxide or silicon dioxide layer having a thickness ranging from about 60 to about 400 nm for modulating light emission of the vertical III-nitride based light emitting diode structure.

2. The structure as claimed in claim 1 , further comprising a metal seed layer formed between the III-nitride based light emitting structure and the metal-based substrate for facilitating layer transfer of the III-nitride based light emitting diode structure from the patterned silicon-on-insulator (SOI) substrate.

3. The structure as claimed in claim 2 , wherein the seed layer comprises nickel having a thickness ranging from about 100 nm to about 1000 nm.

4. The structure as claimed in claim 2 , wherein the seed layer is electroplated to the metal-based substrate.

5. The structure as claimed in claim 1 , further comprising a reflective mirror layer capable of functioning as a p-type contact electrode, the mirror layer formed between the metal-based substrate and the III-nitride based light emitting structure.

6. The structure as claimed in claim 5 , wherein the reflective mirror layer comprises a plurality of layers selected from a group of material consisting of nickel, gold, platinum, silver, palladium and ruthenium.

7. The structure as claimed in claim 1 , further comprising photonic crystal (PhC) structures formed on an n-doped III-nitride layer of the III-nitride based light emitting diode structure, the PhC structures having lateral and vertical dimensions of less than about 400 nm.

8. The structure as claimed in claim 1 , further comprising photonic crystal (PhC) structures formed on an n-doped III-nitride layer of the III-nitride based light emitting diode structure, the PhC structures comprising periodic patterns of structures selected from a group consisting of nanopillars, nanoholes and nanopyramid structures.

9. The structure as claimed in claim 1 , further comprising an n-type contact electrode structure formed on the III-nitride based light emitting structure.

10. The structure as claimed in claim 9 , wherein the n-type contact electrode structure comprises a plurality of layers selected from a group of material consisting of titanium, aluminium, gold, chromium and nickel.

11. The structure as claimed in claim 1 , wherein the plurality of heterostructures of the light-generating layer comprise a plurality of InGaN/GaN quantum wells, and wherein an indium content in the plurality of InGaN/GaN quantum wells is inhomogeneous across the light-generating layer for modulating light emission of the vertical III-nitride based light emitting diode structure.

12. A vertical III-nitride based light emitting diode structure, the structure comprising,
a patterned buried oxide layer of a silicon-on-insulator (SOI) substrate;
a III-nitride based light emitting structure for light emission formed on the patterned SOI substrate, the III-nitride based light emitting structure comprising an active layer comprising a plurality of III-nitride heterostructures,
wherein a Group III metal content in the active layer of the III-nitride based light emitting structure is inhomogeneously formed in response to creation of the patterned SOI substrate comprising one or more silicon overlayers having a thickness ranging from about 10 nm to about 300 nm and the patterned buried oxide layer having a thickness ranging from about 60 to about 400 nm for modulating an emission of the light emitting diode structure.

13. The structure as claimed in claim 12 , wherein the III-nitride based light emitting structure comprises one or more nitride-based buffer layers formed directly on the patterned SOI substrate.

14. The structure as claimed in claim 12 , wherein the plurality of heterostructures of the active layer comprise a plurality of InGaN/GaN quantum wells, and wherein an indium content in the plurality of InGaN/GaN quantum wells is inhomogeneous across the active layer for modulating light emission of the vertical III-nitride based light emitting diode structure.

Assignees

• Agency Science Tech & Res
• Agency Science Tech & Res

Inventors

• Sudhiranjan Tripathy
• Vivian Kaixin Lin
• Siew Lang Teo
• Surani Bin Dolmanan

Classifications

• H01L2933/0083

  Electricity · mapped topic

• H01L33/007

  Electricity · mapped topic

• H01L33/025

  Electricity · mapped topic

• H01L33/32 Primary

  Electricity · mapped topic

• H01L33/405

  Electricity · mapped topic