Gas flow monitoring method and gas flow monitoring apparatus

Patent metadata

Field	Value
Publication number	US-10184185-B2
Application number	US-201615363854-A
Country	US
Kind code	B2
Filing date	Nov 29, 2016
Priority date	Dec 15, 2015
Publication date	Jan 22, 2019
Grant date	Jan 22, 2019

Abstract

In a gas flow monitoring method using a MFC (a flow control device) for controlling a flow rate of process gas from a process gas supply source and supply the process gas to a predetermined process chamber, a start shut-off valve placed upstream of the MFC, and a pressure gauge placed between the start shut-off valve and the MFC, the start shut-off valve is closed and a drop of pressure on an upstream side of the MFC is measured by the pressure gauge to measure a flow rate of the MFC, thereafter, the start shut-off valve is opened to monitor the flow rate of the MFC. The MFC is switched from an ON state to an OFF state before the start shut-off valve is opened. The method enables in-line monitoring a low rate of process gas without affecting a semiconductor manufacturing process.

First claim

What is claimed is:

1. A gas flow monitoring method for monitoring a flow rate of a flow control device,
the method using:
the flow control device for controlling a flow rate of process gas from a process gas supply source and supplying the process gas to a predetermined process chamber;
a start shut-off valve placed on an upstream side of the flow control device; and
a pressure gauge placed between the start shut-off valve and the flow control device, and

the method comprising:
closing the start shut-off valve and measuring a decrease in pressure on the upstream side of the flow control device to measure the flow rate of the flow control device; and
subsequently opening the start shut-off valve and monitoring the flow rate of the flow control device,

wherein the method further includes switching the flow control device from an ON state to an OFF state before opening the start shut-off valve.

2. The gas flow monitoring method according to claim 1 , wherein
the method includes: a monitoring controller electrically connected to the start shut-off valve and the pressure gauge; and a semiconductor manufacturing apparatus electrically connected to the monitoring controller and the flow control device,
the semiconductor manufacturing apparatus switches the flow control device from the ON state to the OFF state after the monitoring controller measures the flow rate of the flow control device, and subsequently the semiconductor manufacturing apparatus inputs a flow measurement end signal instructing termination of flow measurement of the flow control device to the monitoring controller, and
the monitoring controller opens the start shut-off valve upon receipt of the flow measurement end signal.

3. The gas flow monitoring method according to claim 1 , wherein
the method includes a monitoring controller electrically connected to a semiconductor manufacturing apparatus, the start shut-off valve, the pressure gauge, and the flow control device,
when the monitoring controller receives an off command signal to switch the flow control device from the ON state to the OFF state and a flow measurement start signal to start flow measurement of the flow control device from the semiconductor manufacturing apparatus, the monitoring controller closes the start shut-off valve and then measures the flow rate of the flow control device, and subsequently switches the flow control device from the ON state to the OFF state and opens the start shut-off valve.

4. A gas flow monitoring apparatus comprising:
a start shut-off valve placed in a gas line for supplying process gas from a process gas supply source to a predetermined process chamber via a flow control device, the start shut-off valve being located on an upstream side of the flow control device;
a pressure gauge placed between the start shut-off valve and the flow control device; and
a monitoring controller configured to close the start shut-off valve and measure a decrease in pressure on the upstream side of the flow control device in order to measure a flow rate of the flow control device,
wherein the monitoring controller is electrically connected to a semiconductor manufacturing apparatus configured to enable a process to be executed when the flow control device is in an ON state,
the semiconductor manufacturing apparatus is configured to switch the flow control device from the ON state to the OFF state and then transmit a flow measurement end signal instructing termination of flow measurement of the flow control device to the monitoring controller to the monitoring controller, and
the monitoring controller includes a valve opening unit configured to open the start shut-off valve when the monitoring controller receives the flow measurement end signal from the semiconductor manufacturing apparatus.

5. A gas flow monitoring apparatus comprising:
a start shut-off valve placed in a gas line for supplying process gas from a process gas supply source to a predetermined process chamber via a flow control device, the start shut-off valve being located on an upstream side of the flow control device;
a pressure gauge placed between the start shut-off valve and the flow control device; and
a monitoring controller configured to close the start shut-off valve and measure a decrease in pressure on the upstream side of the flow control device in order to measure a flow rate of the flow control device,
wherein the monitoring controller includes:
an off command signal input unit configured to receive an off command signal indicating a command to switch the flow control device to the OFF state, from a semiconductor manufacturing apparatus configured to enable a process to be executed when the flow control device is in an ON state, and
a valve opening unit configured to open the start shut-off valve after the off command signal input unit receives the off command signal from the semiconductor manufacturing apparatus and the flow rate of the flow control device is measured.

Assignees

• Ckd Corp
• Horiba Stec Co Ltd
• Horiba Stec Co Ltd

Inventors

• Nakada Akiko
• Nishimura Yasunori
• Ito Minoru
• Nishikawa Masami
• Hayashi Shigeyuki
• Ieki Atsushi

Classifications

• G01F3/38

  having only one measuring chamber · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title

• C23C16/52 Primary

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• G01F1/34

  by measuring pressure or differential pressure · CPC title

• G01F3/36

  with stationary measuring chambers having constant volume during measurement (with measuring chambers which expand or contract during measurement G01F3/02) · CPC title