Semiconductor device and method of manufacturing a semiconductor device

Patent metadata

Field	Value
Publication number	US-10181511-B2
Application number	US-201514871845-A
Country	US
Kind code	B2
Filing date	Sep 30, 2015
Priority date	Oct 13, 2014
Publication date	Jan 15, 2019
Grant date	Jan 15, 2019

Abstract

A semiconductor device comprises a gate electrode in a trench in a semiconductor body. The gate electrode comprises a plurality of gate segments disposed along an extension direction of the trench, the gate segments being connected to neighboring gate segments by means of connection elements. A distance between adjacent gate segments is equal to or smaller than 0.5*L, wherein L denotes a length of each of the gate segments, the length being measured along the extension direction of the trench.

First claim

The invention claimed is:

1. A semiconductor device, comprising:
a gate electrode disposed in a trench formed in a semiconductor body;
a field plate comprising a plurality of field plate segments disposed in the trench below the gate electrode; and
a plurality of connection elements disposed in the trench below the gate electrode and electrically connecting neighboring ones of the field plate segments,
wherein the field plate segments extend deeper into the trench than the connection elements so that the field plate segments terminate closer to a bottom of the trench than the connection elements,
wherein in the trench below the plurality of connection elements, the field plate segments are separated from one another by a dielectric material along a lengthwise extension direction of the trench.

2. The semiconductor device of claim 1 , wherein the gate electrode comprises a plurality of gate segments disposed and separated from each other along the lengthwise extension direction of the trench, the gate segments being electrically connected to neighboring ones of the gate segments by means of additional connection elements.

3. The semiconductor device of claim 2 , wherein the gate segments have portions that do not overlap with the field plate segments in a vertical direction perpendicular to the lengthwise extension direction.

4. The semiconductor device of claim 2 , wherein the connection elements are disposed directly beneath the additional connection elements, and wherein the field plate segments are disposed directly beneath the gate segments.

5. The semiconductor device of claim 1 , further comprising a field dielectric layer between the field plate and the semiconductor body, wherein a distance C 2 between adjacent ones of the field plate segments corresponds to a thickness of the field dielectric layer, the distance C 2 being measured along the lengthwise extension direction of the trench.

6. The semiconductor device of claim 5 , the distance C 2 between the field plate segments fulfills 0.5xt≤C 2 ≤1.5xt, wherein t denotes the thickness of the field dielectric layer.

7. The semiconductor device of claim 6 , wherein the length of the field plate segments is approximately equal to C 2 .

8. The semiconductor device of claim 1 , wherein the connection elements are implemented as segmented portions that are electrically connected to neighboring ones of the field plate segments.

9. The semiconductor device of claim 1 , wherein the connection elements are implemented as a continuous line disposed over the field plate segments.

10. The semiconductor device of claim 9 , wherein the field plate segments comprise a material different from a material of the connection elements and are separate from the connection elements.

11. The semiconductor device of claim 1 , wherein the connection elements have a thickness that is smaller than a thickness of the field plate segments, wherein the thickness of the field plate segments and the thickness of the connection elements are measured in a depth direction of the semiconductor body.

12. The semiconductor device of claim 11 , wherein a ratio of the thickness of the field plate segments to the thickness of the connection elements is 2 or more.

13. The semiconductor device of claim 1 , wherein the field plate segments extend deeper in the semiconductor body than the connection elements.

14. The semiconductor device of claim 1 , wherein the field plate segments are wider than the connection elements in a direction transvers to the lengthwise extension direction.

15. The semiconductor device of claim 1 , wherein the connection elements are wider than the field plate segments in a direction transvers to the lengthwise extension direction.

16. The semiconductor device of claim 1 , wherein the field plate segments comprise a different material than the connection elements and are separate from the connection elements.

17. The semiconductor device of claim 1 , wherein the field plate segments and the connection elements comprise the same material.

18. The semiconductor device of claim 1 , wherein the gate electrode is implemented as a continuous gate electrode.

19. A semiconductor device, comprising:
a semiconductor body having a first main surface;
a trench formed in the first main surface of the semiconductor body and having a lengthwise extension that runs parallel to the first main surface;
a plurality of columnar or needle shaped field plate segments disposed in the trench and separated from one another by a dielectric material along the lengthwise extension of the trench; and
a plurality of connection elements disposed in the trench above the plurality of field plate segments and electrically connecting neighboring ones of the field plate segments,
wherein the field plate segments extend deeper into the trench than the connection elements so that the field plate segments terminate closer to a bottom of the trench than the connection elements.

20. The semiconductor device of claim 19 , wherein the field plate segments comprise a material different from a material of the connection elements.

21. The semiconductor device of claim 20 , wherein the connection elements comprise metal and the field plate segments comprise doped polysilicon.

22. The semiconductor device of claim 20 , wherein the connection elements comprise a TiN barrier layer and a tungsten filling.

23. The semiconductor device of claim 19 , wherein the trench comprises first trench portions having a first width measured perpendicularly with respect to the lengthwise extension of the trench and second trench portions having a second width which is smaller than the first width, wherein the field plate segments are disposed in the first trench portions, and wherein the connection elements are disposed in the second trench portions.

24. The semiconductor device of claim 23 , wherein the first trench portions extend deeper into the semiconductor body than the second trench portions.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Poelzl Martin
• Ehrentraut Georg
• Hirler Franz
• Roesch Maximilian

Classifications

• H01L29/7813

  Electricity · mapped topic

• H01L29/404

  Electricity · mapped topic

• H01L29/66734

  Electricity · mapped topic

• H01L29/0696 Primary

  Electricity · mapped topic

• H01L29/407

  Electricity · mapped topic