Patterned thin films by thermally induced mass displacement

Patent metadata

Field	Value
Publication number	US-10179952-B2
Application number	US-201414202972-A
Country	US
Kind code	B2
Filing date	Mar 10, 2014
Priority date	Mar 8, 2013
Publication date	Jan 15, 2019
Grant date	Jan 15, 2019

Abstract

The described invention provides a method of patterning a thin film deposited on a substrate comprising applying a moving focused field of thermal energy to the thin film deposited on the substrate; and dewetting the thin film from the substrate. Dewetting the thin film from the substrate is characterized by a negative space of a desired design; and displacement of the thin film into adjacent structures, thereby accumulating thin film in the adjacent structures.

First claim

What is claimed is:

1. A method of patterning a thin film deposited on a substrate, the thin film including a thin film material, the method comprising the steps of:
providing a substrate having the thin film deposited thereon,
selecting a desired pattern of the thin film deposited on the substrate,
scanning the thin film with a focused field of thermal energy provided by a laser, thereby dewetting the thin film material from the substrate,
wherein the step of scanning the thin film with the focused field of thermal energy results in an ablation of the film material of less than 10%,

displacing at least a portion of the dewetted thin film material from the substrate to form a continuous area of exposed substrate having the desired pattern, and
forming the displaced thin film material into a continuous bead of displaced thin film material,
wherein the continuous bead of displaced thin film material is adjacent to the continuous area of exposed substrate,

wherein the scanning step is performed by moving the focused field of thermal energy in a continuous motion across the thin film with the focused field of thermal energy in contact with the thin film,
wherein the thin film material is a metal or metal alloy, and
wherein the substrate is a polymer.

2. The method according to claim 1 , wherein the focused field of thermal energy includes at least a first wavelength, the thin film material is capable of absorbing energy having a second wavelength, and the first and second wavelengths are the same such that the thin film material absorbs at least a portion of the thermal energy.

3. The method according to claim 2 , wherein the substrate does not absorb energy having the first wavelength of the focused field of thermal energy, such that scanning with the focused field of thermal energy does not change the substrate.

4. The method according to claim 1 , wherein the metal or the metal alloy is comprised of bismuth.

5. The method according to claim 1 , wherein the metal or the metal alloy is comprised of tin.

6. The method according to claim 1 , wherein the polymer is parylene.

7. The method according to claim 6 , wherein the parylene is parylene C.

8. The method according to claim 1 , wherein the ablation of the thin film material is less than 5%.

9. The method according to claim 1 , wherein the ablation of the thin film material is less than 3%.

10. The method according to claim 1 , wherein the ablation of the thin film material is 2.8%.

11. The method according to claim 1 , wherein the ablation of the thin film material is 0.5%.

12. The method according to claim 1 , including the further step of scanning the thin film along a side of the continuous bead opposite the continuous area of the substrate with the focused field of thermal energy, thereby dewetting the thin film material along the side of the continuous bead and displacing the dewetted thin film material into contact with the continuous bead.

Assignees

• Univ Rutgers

Inventors

• Amatucci Glenn G
• Ferrer Anthony

Classifications

• C23F4/02 Primary

  by evaporation · CPC title