Cobalt contact and interconnect structures

Patent metadata

Field	Value
Publication number	US-10177030-B2
Application number	US-201715403667-A
Country	US
Kind code	B2
Filing date	Jan 11, 2017
Priority date	Jan 11, 2017
Publication date	Jan 8, 2019
Grant date	Jan 8, 2019

Abstract

Methods and structures for forming cobalt contact and/or cobalt interconnects includes depositing a stress control layer onto the cobalt layer prior to annealing after which the stress control layer can be removed. The stress control layer prevents formation of defects that can occur in the absence of the stress control layer.

First claim

What is claimed is:

1. An intermediate semiconductor structure, comprising:
a patterned interlayer dielectric overlaying a semiconductor substrate, wherein the patterned interlayer dielectric comprises at least one opening extending through the interlayer dielectric to the semiconductor substrate;
a cobalt metal filling the at least one opening; and
a stress control layer on top of the cobalt metal filling, wherein the cobalt metal filling is substantially void free subsequent to an annealing process with the stress control layer on top of the cobalt metal filling
wherein an aspect ratio of a height and a width of the at least one opening is at least about 10:1.

Assignees

• IBM

Inventors

• Amanapu Hari P
• Patlolla Raghuveer R
• Peethala Cornelius Brown
• Yang Chih-Chao

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10W20/089

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/064

  by modifying the conductivity of conductive parts, e.g. by alloying · CPC title