Semiconductor device and method
US-2024395867-A1 · Nov 28, 2024 · US
SiC epitaxial wafer and method for manufacturing the same
US10176987B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10176987-B2 |
| Application number | US-201715587258-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 4, 2017 |
| Priority date | Jun 19, 2012 |
| Publication date | Jan 8, 2019 |
| Grant date | Jan 8, 2019 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm 2 to 0.5 pieces/cm 2 (where x indicates the off angle).
First claim
Opening claim text (preview).
The invention claimed is: 1. A SiC epitaxial wafer comprising: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein a surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm 2 to 0.5 pieces/cm 2 (where x indicates the off angle), and wherein the surface density of triangular defects with a starting point size of less than 20 μm is equal to or less than 0.05 pieces/cm 2 . 2. The SiC epitaxial wafer according to claim 1 , wherein the surface density of triangular defects including a piece of a member which is placed in a SiC-CVD furnace as a starting point in the SiC epitaxial layer is equal to or less than 0.5 pieces/cm 2 . 3. The SiC epitaxial wafer according to claim 2 , wherein the piece of the member as the starting point is made of one of carbon and silicon carbide.
Assignees
Inventors
Classifications
Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title
N-type · CPC title
Crystal orientations · CPC title
Silicon carbide · CPC title
Silicon carbide · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10176987B2 cover?
- A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/…
- Who is the assignee on this patent?
- Showa Denko Kk
- What technology area does this patent fall under?
- Primary CPC classification H10P14/24. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 08 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).