Methods and structures for thin-film encapsulation and co-integration of same with microelectronic devices and microelectromechanical systems (MEMS)

Patent metadata

Field	Value
Publication number	US-10173893-B2
Application number	US-201615246278-A
Country	US
Kind code	B2
Filing date	Aug 24, 2016
Priority date	Jul 25, 2014
Publication date	Jan 8, 2019
Grant date	Jan 8, 2019

Abstract

Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.

First claim

What is claimed is:

1. A method of forming a microshell structure, comprising:
forming a first sacrificial layer over a MEMS region and an underlying substrate, and removing a part of the first sacrificial layer to leave one or more remaining portions of the first sacrificial layer;
forming a second sacrificial layer over the remaining portions of the first sacrificial layer, the second sacrificial layer being thicker than the first sacrificial layer, and removing a part of the second sacrificial layer to leave one or more remaining portions of the second sacrificial layer over at least a part of the remaining portions of the first sacrificial layer;
forming an upper microshell layer over the remaining portions of the first and second sacrificial layers;
creating one or more upper release holes in the upper microshell layer;
removing at least a part of the remaining portions of the first and/or second sacrificial layers through the upper release holes to form one or more open cavities or open areas under the upper microshell layer; and
forming a sealing layer on the upper microshell layer to seal the upper release holes in the upper microshell layer.

2. The method of claim 1 , further comprising removing a part of the second sacrificial layer that is over the first sacrificial layer to leave one or more remaining portions of the first sacrificial layer that are not overlain by the second sacrificial layer.

3. The method of claim 1 , further comprising:
forming a lower microshell layer over the remaining portions of the first sacrificial layer;
creating one or more lower release holes in the lower microshell layer;
forming the second sacrificial layer over the lower microshell layer and the remaining portions of the first sacrificial layer, and removing a part of the second sacrificial layer to leave one or more remaining portions of the second sacrificial layer over the lower microshell layer and at least a part of the remaining portions of the first sacrificial layer;
forming the upper microshell layer over the remaining portions of the first sacrificial layer, the lower microshell layer, and the remaining portions of the second sacrificial layer;
removing at least a part of the remaining portions of the first and/or second sacrificial layers through the upper and/or lower release holes to form one or more open cavities or open areas under the upper microshell layer; and
forming a sealing layer on the upper microshell layer to seal the upper release holes in the upper microshell layer.

4. The method of claim 3 , further comprising:
removing at least a part of the remaining portions of the first sacrificial layer through the upper and lower release holes to form one or more open cavities or open areas under the upper and lower microshell layers; and
not removing at least a part of the remaining portions of the second sacrificial layer so as to form a filled cavity section between the upper microshell layer and the lower microshell layer.

5. The method of claim 3 , further comprising forming the lower release holes to be laterally offset from the upper release holes.

6. The method of claim 5 , further comprising:
forming the MEMS region to include a MEMS structural layer defining one or MEMS devices over a MEMS release layer prior to forming the first sacrificial layer over the MEMS region; and
removing the MEMS release layer through the upper and lower release holes in one or more areas beneath the MEMS structural layer to release the MEMS devices formed therein following the step of removing at least a part of the remaining portions of the first and/or second sacrificial layers through the upper and/or lower release holes to form one or more open cavities or open areas under the upper microshell layer and prior to forming the sealing layer on the upper microshell layer to seal the upper release holes in the upper microshell layer.

7. The method of claim 1 , further comprising forming a residual gas getter layer over the remaining portions of the first and second sacrificial layers prior to removing at least a part of the remaining portions of the first and/or second sacrificial layers through the upper release holes to form one or more open cavities or open areas under the upper microshell layer.

8. The method of claim 1 , further comprising forming the second sacrificial layer over and in contact with the remaining portions of the first sacrificial layer, and removing a part of the second sacrificial layer to leave one or more remaining portions of the second sacrificial layer overlying and in contact with at least a part of the remaining portions of the first sacrificial layer.

9. The method of claim 8 , further comprising removing a part of the second sacrificial layer to leave one or more portions of the second sacrificial layer overlying and in contact with one or more portions of the first sacrificial layer.

10. The method of claim 9 , further comprising removing the one or more portions of the second sacrificial layer together with one or more underlying portions of the first sacrificial layer through the upper release holes to form at least one open main cavity section under the upper microshell layer prior to forming a sealing layer on the upper microshell layer to seal the upper release holes in the upper microshell layer.

11. The method of claim 9 , further comprising leaving the one or more portions of the second sacrificial layer together with and in contact with the one or more underlying portions of the first sacrificial layer to form at least one filled main cavity section under the upper microshell layer prior to forming a sealing layer on the upper microshell layer to seal the upper release holes in the upper microshell layer.

12. The method of claim 8 , further comprising forming a mold for one or more microshell support lattice members that extend downward into the remaining portions of the second sacrificial layer and terminate above the remaining portions of the first sacrificial layer prior to forming the upper microshell layer over the remaining portions of the first and second sacrificial layers; and forming the upper microshell layer to fill the mold within the remaining portions of the second sacrificial layer to create one or more microshell support lattice members that extend downward from an underside of the upper microshell layer.

13. The method of claim 12 , further comprising removing remaining portions of the first and second sacrificial layers through the upper release holes to form at least one open cavity under the upper microshell layer that is surrounded by peripheral edges with the microshell support lattice members extending downward into the open cavity from the underside of the upper microshell layer to terminate above the MEMS region without contacting the MEMS region and with the upper microshell layer contacting the MEMS region at the peripheral edges of the open cavity so as to suspend the upper microshell layer and microshell support lattice members over the open cavity.

14. The method of claim 13 , where the mold defines a pattern of multiple microshell support lattice members between the peripheral edges of the open cavity; and where the method further comprises removing remaining portions of the first and second sacrificial layers through the upper release holes to form an array of open cavity sections defined by the microshell support lattice members under the upper microshell layer.

15. The method of claim 1 , further comprising:
forming the MEMS region to include a MEMS structural layer defining one or MEMS devices over a MEMS release layer prior to formin

Assignees

• Semiconductor Mfg Int Shanghai Corp

Inventors

• Quevy Emmanuel P
• Hui Jeremy R
• Low Carrie Wing-Zin
• Motiee Mehrnaz

Classifications

• B81C2203/019

  characterised by the material or arrangement of seals between parts · CPC title

• B81C1/00285

  using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters · CPC title

• G01N27/227

  Sensors changing capacitance upon adsorption or absorption of fluid components, e.g. electrolyte-insulator-semiconductor sensors, MOS capacitors (G01N27/225 takes precedence) · CPC title

• B81C2203/0735

  Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit · CPC title

• B81C1/00246 Primary

  Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate · CPC title