Integrated MEMS transducer and circuitry

Patent metadata

Field	Value
Publication number	US-10173892-B2
Application number	US-201515329164-A
Country	US
Kind code	B2
Filing date	Jul 30, 2015
Priority date	Jul 31, 2014
Publication date	Jan 8, 2019
Grant date	Jan 8, 2019

Abstract

This application relates to an integrated circuit die ( 200 ) comprising a MEMS transducer structure ( 101 ) integrated with associated electronic circuitry ( 102 ). The electronic circuitry comprises a plurality of transistors and associated interconnections and is formed in a first area ( 103 ) of the die from a first plurality ( 104 ) of layers, e.g. formed by CMOS metal ( 107 ) and dielectric ( 108 ) layers and possibly doped areas ( 106 ) of substrate ( 105 ). The MEMS transducer structure is formed in a second area ( 111 ) of the die and is formed, at least partly, from a second plurality ( 112 ) of layers which are separate to the first plurality of layers. At least one filter circuit ( 201 ) is formed from said second plurality of layers overlying the plurality of transistors of the electronic circuitry ( 102 ). The second plurality of layers comprise at least a first metal layer ( 115, 117 ) which is patterned to form a first electrode of the MEMS transducer and at least a resistor, capacitor electrode or inductor element ( 203 a, 203 b ) of the filter circuit.

First claim

The invention claimed is:

1. A MEMS transducer die comprising:
first circuitry comprising a plurality of transistors and their interconnections formed in a first area of the die from a first plurality of layers;
a MEMS transducer structure formed in a second area of the die, the MEMS transducer structure being formed at least partly from a second plurality of layers which are separate to the first plurality of layers, the second plurality of layers comprising at least a first metal layer; and
at least one filter circuit formed from said second plurality of layers overlying said plurality of transistors;
wherein:
said first metal layer is patterned to form a first electrode of the MEMS transducer and at least a resistor, capacitor electrode or inductor element of the filter circuit; and
said first circuitry comprises an amplifier circuit and wherein the filter circuit comprises a first filter network connected in a conductive path between an output terminal of the die and an output of said amplifier circuit.

2. A MEMS transducer die as claimed in claim 1 wherein the second plurality of layers further comprises a second metal layer, wherein
said second metal layer is patterned to form a second electrode of the MEMS transducer and at least a part of the filter circuit.

3. A MEMS transducer die as claimed in claim 1 wherein the second plurality of layers further comprises a third metal layer, wherein
said third metal layer is patterned to form at least part of a conductive path between an electrode of the MEMS transducer and the first circuitry and is also patterned to form at least a part of the filter circuit.

4. A MEMS transducer die as claimed in claim 1 wherein the second plurality of layers further comprises at least one layer that acts as an insulator for the transducer structure in the second area of the die and an insulator for the filter circuit in the first area of the die.

5. A MEMS transducer die as claimed in claim 1 wherein the filter circuit comprises a capacitor and wherein the second plurality of layers comprises at least a first dielectric layer which forms part of the transducer structure in the second area of the die and at least part of a dielectric of said capacitor of the filter circuit in the first area of the die.

6. A MEMS transducer die as claimed in claim 1 comprising a cavity in said first plurality of layers in the second area to provide at least part of an acoustic volume for said MEMS transducer.

7. A MEMS transducer die as claimed in claim 1 wherein the filter circuit comprises a resistive-capacitive filter.

8. A MEMS transducer die as claimed in claim 1 wherein the filter circuit comprises a second filter network connected in a conductive path between a voltage supply terminal to the die and a first input of the first circuitry.

9. A MEMS transducer die as claimed in claim 8 wherein the filter circuit comprises a third filter network connected in a conductive path between the output of the second filter network and a second input of the first circuitry.

10. A MEMS transducer die as claimed in claim 9 wherein said first circuitry comprises biasing circuitry and said first input of the first circuitry is a supply input to said biasing circuitry and wherein said second input of the first circuitry is a supply input to said amplifier circuit.

11. A MEMS transducer die as claimed in claim 8 wherein the transducer die comprises a conductive path between said voltage supply terminal to the die and a third input of the first circuitry which does not include said second filter circuit.

12. A MEMS transducer die as claimed in claim 11 wherein said first circuitry comprises a trimming circuit for trimming a bias voltage and said third input of the first circuitry is a supply input to said trimming circuit.

13. A MEMS transducer die as claimed in claim 11 wherein the filter circuit comprises a fourth filter network connected in said conductive path between said voltage supply terminal and said third input of the first circuitry, wherein said fourth filter network is configured to provide less filtering than said second filter network.

14. A MEMS transducer die as claimed in claim 1 wherein the filter circuit comprises a resistor and wherein said resistor comprises a conductive path with a serpentine configuration.

15. An electronic device comprising a MEMS transducer die as claimed in claim 1 wherein said device is at least one of: a portable device; a battery powered device; a computing device; a communications device; a gaming device; a mobile telephone; a personal media player; a laptop, tablet or notebook computing device.

16. A MEMS transducer die comprising:
first circuitry comprising a plurality of transistors and their interconnections formed in a first area of the die from a first plurality of layers;
a MEMS transducer structure formed in a second area of the die, the MEMS transducer structure being formed at least partly from a second plurality of layers which are separate to the first plurality of layers, the second plurality of layers comprising at least a first metal layer; and
at least one filter circuit formed from said second plurality of layers overlying said plurality of transistors;
wherein:
said first metal layer is patterned to form a first electrode of the MEMS transducer and at least a resistor, capacitor electrode or inductor element of the filter circuit; and
the filter circuit comprises at least one capacitor and wherein the first metal layer forms a first capacitor electrode for said at least one capacitor in the first area of the die.

17. A MEMS transducer die as claimed in claim 16 wherein said first capacitor electrode is connected via a conductive path to a ground terminal of said transducer die.

18. A MEMS transducer die comprising:
a first plurality of layers; and
a second plurality of layers on the first plurality of layers; wherein the die comprises:
first circuitry comprising a plurality of transistors formed in a first area in the first plurality of layers;
filter circuitry formed in the first area in the second plurality of layers;

a transducer structure formed in a second area in the second plurality of layers; and
a cavity formed in the first plurality of layers within the second area;

wherein the second plurality of layers comprises a first metal layer that forms at least part of the filter circuitry in the first area and an electrode of the transducer structure in the second area.

19. A monolithic semiconductor die comprising:
first and second areas;
a MEMS transducer formed within said first area comprising a plurality of layers;
electronic circuitry coupled to said MEMS transducer and formed within said second area; and
filter circuitry coupled to said electronic circuitry and formed above said electronic circuitry;
wherein said filter circuitry comprises said at least one layer from said plurality of layers.

Assignees

• Cirrus Logic Int Semiconductor Ltd
• Cirrus Logic Inc

Inventors

• Deas James
• Lasseuguette Jean
• Pennock John
• Hesketh Mark

Classifications

• B81B7/008 Primary

  MEMS characterised by an electronic circuit specially adapted for controlling or driving the same (B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00) · CPC title

• H03K5/1252

  Suppression or limitation of noise or interference (specially adapted for transmission systems H04B15/00, H04L25/08) · CPC title

• B81B2207/07

  Interconnects · CPC title

• B81C1/00246 Primary

  Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate · CPC title

• H04R19/005

  using semiconductor materials · CPC title