Silicon light trap devices
US-2015001665-A1 · Jan 1, 2015 · US
US9145292B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9145292-B2 |
| Application number | US-201414281251-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 19, 2014 |
| Priority date | Feb 22, 2011 |
| Publication date | Sep 29, 2015 |
| Grant date | Sep 29, 2015 |
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Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.
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What is claimed is: 1. A method of forming a monolithic integrated sensor device comprising: forming a microelectromechanical system (MEMS) device on a non-silicon-on-insulator (non-SOI) substrate by: forming a monocrystalline sacrificial layer on only a first portion of the non-SOI substrate, depositing a first silicon layer on the monocrystalline sacrificial layer and on a second portion of the non-SOI substrate different from the first portion, forming a cavity in the mono…
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