Solar cell having an emitter region with wide bandgap semiconductor material

Patent metadata

Field	Value
Publication number	US-10170657-B2
Application number	US-201514945708-A
Country	US
Kind code	B2
Filing date	Nov 19, 2015
Priority date	Mar 23, 2012
Publication date	Jan 1, 2019
Grant date	Jan 1, 2019

Abstract

Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

First claim

What is claimed is:

1. A solar cell, comprising:
a single crystalline silicon substrate;
a doped amorphous silicon layer disposed directly on a thin oxide layer disposed on a surface of the single crystalline silicon substrate, wherein the doped amorphous silicon layer is an emitter region sufficiently thin to minimize optical absorption, and wherein the doped amorphous silicon layer is doped throughout an entirety of the doped amorphous silicon layer; and
a conductive contact disposed directly on, and conductively coupled to, the doped amorphous silicon layer, wherein the conductive contact has a metallic material in direct contact with the doped amorphous silicon layer.

2. The solar cell of claim 1 , wherein the single crystalline silicon substrate is an N-type doped single crystalline silicon substrate.

3. The solar cell of claim 1 , further comprising:
a second emitter region disposed on a surface of the silicon substrate and comprising a semiconductor material having a conductivity type opposite a conductivity type of the doped amorphous silicon layer.

4. The solar cell of claim 3 , wherein the semiconductor material of the second emitter region is disposed on a thin dielectric layer.

5. The solar cell of claim 3 , wherein the semiconductor material comprises polycrystalline silicon.

6. The solar cell of claim 3 , wherein the doped amorphous silicon layer is disposed on a textured portion of the surface of the single crystalline silicon substrate, and the second emitter region is disposed on a flat portion of the single crystalline silicon substrate.

7. The solar cell of claim 3 , wherein a portion of the doped amorphous silicon layer is disposed over at least a portion of the second emitter region.

8. The solar cell of claim 1 , wherein the doped amorphous silicon layer is disposed on a textured portion of the surface of the single crystalline silicon substrate.

9. The solar cell of claim 1 , wherein the solar cell is a back-contact solar cell.

10. The solar cell of claim 1 , wherein the doped amorphous silicon layer has a dopant concentration approximately in the range of 1×10 17 -1×10 21 atoms/cm 3 .

11. A solar cell, comprising:
a single crystalline silicon substrate;
a doped amorphous silicon layer disposed on a thin oxide layer disposed on a surface of the single crystalline silicon substrate, wherein the doped amorphous silicon layer is an emitter region sufficiently thin to minimize optical absorption, and wherein the doped amorphous silicon layer is doped throughout an entirety of the doped amorphous silicon layer; and
a conductive contact disposed on, and conductively coupled to, the doped amorphous silicon layer, the conductive contact comprising aluminum, wherein the conductive contact has a metallic material in direct contact with the doped amorphous silicon layer.

12. The solar cell of claim 11 , wherein the single crystalline silicon substrate is an N-type doped single crystalline silicon substrate.

13. The solar cell of claim 11 , further comprising:
a second emitter region disposed on a surface of the silicon substrate and comprising a semiconductor material having a conductivity type opposite a conductivity type of the doped amorphous silicon layer.

14. The solar cell of claim 13 , wherein the semiconductor material of the second emitter region is disposed on a thin dielectric layer.

15. The solar cell of claim 13 , wherein the semiconductor material comprises polycrystalline silicon.

16. The solar cell of claim 13 , wherein the doped amorphous silicon layer is disposed on a textured portion of the surface of the single crystalline silicon substrate, and the second emitter region is disposed on a flat portion of the single crystalline silicon substrate.

17. The solar cell of claim 13 , wherein a portion of the doped amorphous silicon layer is disposed over at least a portion of the second emitter region.

18. The solar cell of claim 11 , wherein the doped amorphous silicon layer is disposed on a textured portion of the surface of the single crystalline silicon substrate.

19. The solar cell of claim 11 , wherein the solar cell is a back-contact solar cell.

20. The solar cell of claim 11 , wherein the doped amorphous silicon layer has a dopant concentration approximately in the range of 1×10 17 -1×10 21 atoms/cm 3 .

21. The solar cell of claim 1 , wherein the conductive contact is on only a portion of an upper surface of the doped amorphous silicon layer.

22. The solar cell of claim 11 , wherein the conductive contact is on only a portion of an upper surface of the doped amorphous silicon layer.

Assignees

• Sunpower Corp

Inventors

• Swanson Richard M
• Bunea Marius M
• Johnson Michael C
• Smith David D
• Shen Yu-Chen
• Cousins Peter J
• Dennis Tim

Classifications

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• H01L31/022441

  Electricity · mapped topic

• H01L31/02167

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L31/0682

  Electricity · mapped topic