Continuous oligocrystalline shape memory alloy wire produced by melt spinning

US10167540B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10167540-B2
Application numberUS-201514705247-A
CountryUS
Kind codeB2
Filing dateMay 6, 2015
Priority dateMay 6, 2014
Publication dateJan 1, 2019
Grant dateJan 1, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

There is provided herein a shape memory alloy wire that includes an alloy composition of CuAlMnNi and excluding grain refiner elements. The alloy composition includes 20 at %-28 at % Al, 2 at %-4 at % Ni, 3 at %-5 at % Mn with Cu as a remaining balance of the alloy composition. The alloy composition is disposed as an elongated wire of at least about 1 meter in length, having a wire diameter of less than about 150 microns. At least about 50 vol % of said alloy composition along said wire length has an oligocrystalline microstructure as-disposed in the wire and without thermal treatment of the wire.

First claim

Opening claim text (preview).

We claim: 1. A shape memory alloy wire comprising: an alloy composition comprising CuAlMnNi and excluding grain refiner elements, said alloy composition including 20 at %-28 at % Al, 2 at %-4 at % Ni, 3 at %-5 at % Mn with Cu as a remaining balance of the alloy composition; said alloy composition being disposed as an elongated wire of at least about 1.5 meters in length, having a wire diameter of less than about 150 microns; and at least about 50 vol % of said alloy composition along said wire length having an oligocrystalline microstructure as-disposed in the wire and without thermal treatment of the wire. 2. The shape memory alloy wire of claim 1 wherein at least about 75 vol % of said alloy composition along said wire length is oligocrystalline. 3. The shape memory alloy wire of claim 1 wherein at least about 90 vol % of said alloy composition along said wire length is oligocrystalline. 4. The shape memory alloy wire of claim 1 wherein the wire exhibits a strain recovery of at least about 8% at room temperature. 5. The shape memory alloy wire of claim 1 wherein the wire exhibits a strain recovery of at least about 10% at room temperature. 6. The shape memory alloy wire of claim 1 wherein said alloy composition includes 22 at %-24 at % Al, 3.5 at %-3.7 at % Ni, 4 at %-4.5 at % Mn, and with Cu as a remaining balance of the composition. 7. The shape memory alloy wire of claim 1 wherein said alloy composition includes 22.3 at % Al, 4.4 at % Mn and 3.6 at % Ni. 8. The shape memory alloy wire of claim 1 wherein the diameter of the wire is no more than about 100 microns. 9. The shape memory alloy wire of claim 1 wherein the diameter of the wire is less than about 120 microns. 10. The shape memory alloy wire of claim 1 wherein the wire diameter has a diameter uniformity of ±5 microns along a 1 meter length of the wire. 11. The shape memory alloy wire of claim 1 wherein the wire has an atomic place spacing difference of between 0.007 nm and 0.008 nm. 12. The shape memory alloy wire of claim 1 wherein no more than about 30% of the alloy composition consists of Al, Mn, and Ni. 13. The shape memory alloy wire of claim 1 wherein the wire exhibits a strain recovery that is at least as large as a strain recovery that is exhibited by a monocrystalline wire having a composition including 20 at %-28 at % Al, 2 at %-4 at % Ni, 3 at %-0.5 at % Mn with Cu as a remaining balance of the alloy, and having a monocrystalline length of about 1 meter in length and a monocrystalline wire diameter of less than about 150 microns. 14. A shape memory alloy wire comprising: an alloy composition comprising CuAlMnNi and excluding grain refiner elements, said alloy composition including 20 at %-28 at % Al, 2 at %-4 at % Ni, 3 at %-5 at % Mn with Cu as a remaining balance of the alloy composition; said alloy composition being disposed as an elongated wire of at least about 1.5 meters in length, having a wire diameter of at least about 150 microns; and at least about 50 vol % of said alloy composition along said wire length having an oligocrystalline microstructure.

Assignees

Inventors

Classifications

  • C22F1/08Primary

    of copper or alloys based thereon · CPC title

  • All metal or with adjacent metals · CPC title

  • with aluminium as the next major constituent · CPC title

  • of wire (casting on wire B22D19/14) · CPC title

  • Resulting in heat recoverable alloys with a memory effect · CPC title

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What does patent US10167540B2 cover?
There is provided herein a shape memory alloy wire that includes an alloy composition of CuAlMnNi and excluding grain refiner elements. The alloy composition includes 20 at %-28 at % Al, 2 at %-4 at % Ni, 3 at %-5 at % Mn with Cu as a remaining balance of the alloy composition. The alloy composition is disposed as an elongated wire of at least about 1 meter in length, having a wire diameter of …
Who is the assignee on this patent?
Massachusetts Inst Technology
What technology area does this patent fall under?
Primary CPC classification C22F1/08. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 01 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).