Polyelectrochromism of electronically weakly coupled 4,4′-divinylazoarylene-bridged two Ru(CO)Cl(PiPr3)2 entities
US-11987596-B1 · May 21, 2024 · US
Ruthenium compound, material for thin film formation, and process for thin film formation
US10167304B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10167304-B2 |
| Application number | US-201415032230-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 7, 2014 |
| Priority date | Dec 20, 2013 |
| Publication date | Jan 1, 2019 |
| Grant date | Jan 1, 2019 |
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- Title
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Abstract
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Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R1 and R2 is 3 to 10. In formula (I), R1 and R2 are each preferably ethyl or isopropyl.
First claim
Opening claim text (preview).
The invention claimed is: 1. A ruthenium compound represented by general formula (I): wherein R 1 , R 2 , and R 3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R 1 and R 2 is 3 to 10. 2. The ruthenium compound according to claim 1 , wherein R 1 and R 2 are each an ethyl group. 3. The ruthenium compound according to claim 1 , wherein R 1 and R 2 are each an isopropyl group. 4. A material for thin film formation comprising the ruthenium compound according to claim 1 . 5. A process for forming a thin film comprising vaporizing the material for thin film formation according to claim 4 and introducing the ruthenium compound-containing vapor into a deposition chamber having a substrate placed therein to cause the ruthenium compound to decompose and/or chemically react to form a ruthenium-containing thin film on the substrate. 6. A material for thin film formation comprising the ruthenium compound according to claim 2 . 7. A material for thin film formation comprising the ruthenium compound according to claim 3 .
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Classifications
from metal carbonyl compounds · CPC title
the carbon skeleton being unsaturated · CPC title
characterized by the use of precursors specially adapted for ALD · CPC title
- C07F15/0046Primary
Ruthenium compounds · CPC title
from metallo-organic compounds · CPC title
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- What does patent US10167304B2 cover?
- Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the tota…
- Who is the assignee on this patent?
- Adeka Corp
- What technology area does this patent fall under?
- Primary CPC classification C07F15/0046. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 01 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).