Flexible electronic circuits including shape memory materials
US-2018159191-A1 · Jun 7, 2018 · US
Flexible electronic circuits including shape memory materials
US10164308B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10164308-B2 |
| Application number | US-201815982271-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 17, 2018 |
| Priority date | Dec 2, 2016 |
| Publication date | Dec 25, 2018 |
| Grant date | Dec 25, 2018 |
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Abstract
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A flexible electronic circuit includes a shape memory material disposed within a flexible dielectric material.
First claim
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What is claimed is: 1. A flexible electronic circuit having an embedded signal trace with a dynamic impedance value, the flexible electronic circuit comprising: a first dielectric structure that includes: a first ground layer overlying a first flexible dielectric layer, the first ground layer defining a ground plane; and an embedded signal trace adjacent to the first flexible dielectric layer, the embedded signal trace defining a signal plane; and a second dielectric structure overlying a second ground layer, the second dielectric structure including: a dielectric material adjacent to the embedded signal trace; and a second flexible dielectric layer separated from the dielectric material by a mechanical member, the second flexible dielectric layer having a shape memory alloy (SMA) material embedded therein, wherein application of heat results in a change in the SMA material from a deformed state to a non-deformed state, the change resulting in movement of the signal plane with respect to the ground plane in order to vary an impedance value of the embedded signal trace. 2. The flexible electronic circuit of claim 1 , wherein the SMA material has a diaphragm shape. 3. The flexible electronic circuit of claim 1 , wherein the SMA material has a cylindrical shape. 4. The flexible electronic circuit of claim 1 , wherein the first flexible dielectric layer is formed from a flexible adhesive bonding material. 5. The flexible electronic circuit of claim 4 , wherein the flexible adhesive bonding material includes an acrylic adhesive. 6. The flexible electronic circuit of claim 1 , wherein the first flexible dielectric layer is formed from an ion gel dielectric material. 7. The flexible electronic circuit of claim 1 , wherein the SMA material corresponds to a copper-aluminum-nickel shape-memory alloy or a nickel-titanium (NiTi) shape-memory alloy. 8. A flexible electronic circuit having an embedded signal trace with a dynamic impedance value, the flexible electronic circuit comprising: a first dielectric structure that includes: a first ground layer overlying a first dielectric layer; and an embedded signal trace adjacent to the first dielectric layer, the embedded signal trace defining a signal plane; and a second dielectric structure overlying a second ground layer that defines a ground plane, the second dielectric structure including: a second dielectric layer adjacent to the embedded signal trace; and a flexible dielectric layer separated from the second dielectric layer by a mechanical member, the flexible dielectric layer having a shape memory alloy (SMA) material embedded therein, wherein application of heat results in a change in the SMA material from a deformed state to a non-deformed state, the change resulting in movement of the ground plane with respect to the signal plane in order to vary an impedance value of the embedded signal trace. 9. The flexible electronic circuit of claim 8 , wherein the SMA material has a diaphragm shape. 10. The flexible electronic circuit of claim 8 , wherein the SMA material has a cylindrical shape. 11. The flexible electronic circuit of claim 8 , wherein the flexible dielectric layer is formed from a flexible adhesive bonding material. 12. The flexible electronic circuit of claim 11 , wherein the flexible adhesive bonding material includes an acrylic adhesive. 13. The flexible electronic circuit of claim 8 , wherein the flexible dielectric layer is formed from an ion gel dielectric material. 14. The flexible electronic circuit of claim 8 , wherein the SMA material corresponds to a copper-aluminum-nickel shape-memory alloy or a nickel-titanium (NiTi) shape-memory alloy.
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Frequently asked questions
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- What does patent US10164308B2 cover?
- A flexible electronic circuit includes a shape memory material disposed within a flexible dielectric material.
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H01P1/06. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 25 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).