Method of integration of a magnetoresistive structure

Patent metadata

Field	Value
Publication number	US-10164176-B2
Application number	US-201715399971-A
Country	US
Kind code	B2
Filing date	Jan 6, 2017
Priority date	Dec 17, 2010
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

A method of manufacturing one or more interconnects to a magnetoresistive structure, the method comprising depositing a first conductive material (i) in a via which is formed through a first surface of a first dielectric layer and (ii) directly on the first surface of the first dielectric layer. The method further includes etching the first conductive material wherein, after etching the first conductive material, a portion of the first conductive material remains (i) in the via and (ii) directly on the first surface of the first dielectric layer. The method also includes partially filling the via by depositing a second conductive material (i) in the via and (ii) directly on the first conductive material remaining in the via, depositing a first electrode material (i) in the via and (ii) directly on the second conductive material which is in the via, and forming a magnetoresistive structure over the first electrode material.

First claim

What is claimed is:

1. A method of manufacturing one or more interconnects to a magnetoresistive structure, the method comprising:
depositing a first conductive material (i) in a via which is formed through a first surface of a first dielectric layer and (ii) directly on the first surface of the first dielectric layer;
etching the first conductive material wherein, after etching the first conductive material, a portion of the first conductive material remains (i) in the via and (ii) directly on a portion of the first surface of the first dielectric layer;
partially filling the via by depositing a second conductive material (i) in the via and (ii) directly on the first conductive material remaining in the via;
depositing a first electrode material (i) in the via and (ii) directly on the second conductive material which is in the via; and
forming a magnetoresistive structure over the first electrode material.

2. The method of claim 1 wherein depositing the first conductive material, etching a portion of the first conductive material, and depositing the second conductive material are performed in-situ.

3. The method of claim 1 wherein:
the first conductive material comprises tantalum or tantalum-nitride, and
the first electrode material comprises tantalum or tantalum-nitride.

4. The method of claim 1 wherein the magnetoresistive structure is a magnetic bit.

5. The method of claim 4 wherein depositing the first conductive material, etching the first conductive material, and depositing the second conductive material are performed in-situ.

6. The method of claim 1 wherein the method further includes depositing a second electrode material directly on the first electrode material, and wherein forming a magnetoresistive structure over the first electrode material includes forming a magnetoresistive structure directly on the second electrode material.

7. The method of claim 1 wherein depositing the second conductive material further includes depositing the second conductive material directly on the first conductive material that is located directly on the portion of the first surface of the first dielectric layer.

8. The method of claim 1 wherein the method further includes polishing a first surface of the first electrode material.

9. The method of claim 8 wherein, after polishing the first surface of the first electrode material, the method further includes depositing a second electrode material directly on the first electrode material, and wherein forming a magnetoresistive structure over the first electrode material includes forming a magnetoresistive structure directly on the second electrode material.

10. The method of claim 9 wherein forming a magnetoresistive structure over the first electrode material includes forming a magnetoresistive structure directly on the second electrode material.

11. The method of claim 1 wherein depositing the first conductive material, etching a portion of the first conductive material, and depositing the second conductive material are performed in-situ, and wherein the method further includes:
polishing a first surface of the first electrode material.

12. The method of claim 11 wherein, after polishing the first surface of first electrode material, the method further includes depositing a second electrode material directly on the first electrode material, and wherein forming a magnetoresistive structure over the first electrode material includes forming a magnetoresistive structure directly on the second electrode material.

13. The method of claim 1 wherein the method further includes depositing a second electrode material directly on the first electrode material.

Assignees

• Everspin Technologies Inc

Inventors

• Nagel Kerry Joseph
• Smith Kenneth
• Hossain Moazzem
• Aggarwal Sanjeev

Classifications

• H10P50/264

  by chemical means · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/092

  by smoothing the dielectric parts · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• H10W20/056 Primary

  by filling conductive material into holes, grooves or trenches · CPC title