Method of forming metal interconnection

Patent metadata

Field	Value
Publication number	US-10163786-B2
Application number	US-201715458078-A
Country	US
Kind code	B2
Filing date	Mar 14, 2017
Priority date	Sep 18, 2015
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

A device includes a first conductive feature disposed over a substrate; a second conductive feature disposed directly on and in physical contact with the first conductive feature; a dielectric layer surrounding sidewalls of the second conductive feature; and a first barrier layer interposed between the second conductive feature and the dielectric layer and in physical contact with both the second conductive feature and the dielectric layer. The first barrier layer and the dielectric layer comprise at least two common elements.

First claim

What is claimed is:

1. A device comprising:
a first conductive feature having a top surface;
a second conductive feature disposed directly on and in physical contact with the top surface of the first conductive feature;
a dielectric layer surrounding sidewalls of the second conductive feature; and
a first barrier layer interposed between the second conductive feature and the dielectric layer and in physical contact with both the second conductive feature and the dielectric layer, the first barrier layer and the dielectric layer comprise at least two common elements, wherein a vertical portion of the first barrier layer is disposed over and in physical contact with the top surface of the first conductive feature.

2. The device of claim 1 , wherein:
the first conductive feature includes copper, aluminum, or tungsten;
the second conductive feature includes copper or copper alloy; and
the first barrier layer includes two or more elements included in the dielectric layer and further includes manganese, manganese nitride, titanium, tantalum, cobalt, cobalt tungsten, or molybdenum.

3. The device of claim 1 , further comprising:
a third conductive feature directly on and in physical contact with the second conductive feature, wherein the dielectric layer also surrounds sidewalls of the third conductive feature, and the first barrier layer is also interposed between the third conductive feature and the dielectric layer and in physical contact with both the third conductive feature and the dielectric layer.

4. The device of claim 3 , wherein:
the first conductive feature includes copper, aluminum, or tungsten;
the second conductive feature includes copper or copper alloy;
the third conductive feature includes copper, cobalt, tungsten, ruthenium, silver, or gold;
the first barrier layer includes manganese, silicon, oxygen, and nitrogen; and
the dielectric layer includes silicon oxide.

5. The device of claim 3 , wherein the third conductive feature is wider than the second conductive feature.

6. The device of claim 1 , further comprising:
a second barrier layer surrounding sidewalls of the first conductive feature, the first and the second barrier layers comprise different materials.

7. The device of claim 6 , wherein:
the first barrier layer comprises silicon, oxygen, and one of: manganese, manganese nitride, titanium, tantalum, cobalt, cobalt tungsten, or molybdenum; and
the second barrier layer comprises titanium nitride, tantalum nitride, tungsten nitride, titanium silicon nitride, or tantalum silicon nitride.

8. A device comprising:
a first conductive feature;
a second conductive feature disposed directly on and in physical contact with the first conductive feature;
a third conductive feature directly on and in physical contact with the second conductive feature;
a dielectric layer surrounding sidewalls of the second and the third conductive features; and
a first barrier layer interposed between the second conductive feature and the dielectric layer, and between the third conductive feature and the dielectric layer, and in physical contact with both the second and third conductive features and the dielectric layer, wherein the first barrier layer includes two or more elements included in the dielectric layer and further includes manganese, manganese nitride, titanium, tantalum, cobalt, cobalt tungsten, or molybdenum.

9. The device of claim 8 , wherein:
the first conductive feature includes copper, aluminum, or tungsten;
the second conductive feature includes copper or copper alloy;
the third conductive feature includes copper, cobalt, tungsten, ruthenium, silver, or gold;
the first barrier layer includes manganese, silicon, oxygen, and nitrogen; and
the dielectric layer includes silicon oxide.

10. The device of claim 8 , wherein:
the first conductive feature includes copper;
the second conductive feature includes copper or copper alloy;
the third conductive feature includes copper;
the dielectric layer includes silicon oxide; and
the first barrier layer includes silicon, oxygen, and one of: manganese, manganese nitride, titanium, tantalum, cobalt, cobalt tungsten, or molybdenum.

11. The device of claim 10 , wherein the third conductive feature is wider than the second conductive feature.

12. The device of claim 8 , further comprising:
a second barrier layer surrounding sidewalls of the first conductive feature, wherein the first barrier layer comprises silicon, oxygen, and one of: manganese, manganese nitride, titanium, tantalum, cobalt, cobalt tungsten, or molybdenum; and wherein the second barrier layer comprises titanium nitride, tantalum nitride, tungsten nitride, titanium silicon nitride, or tantalum silicon nitride.

13. The device of claim 12 , wherein:
the first conductive feature includes copper, aluminum, or tungsten; and
the second conductive feature includes copper or copper alloy.

14. The device of claim 13 , wherein:
the third conductive feature includes copper, cobalt, tungsten, ruthenium, silver, or gold; and
the dielectric layer includes silicon and oxygen.

15. A device comprising:
a first conductive feature;
a second conductive feature disposed over the first conductive feature;
a dielectric layer surrounding sidewalls of the second conductive feature and comprising silicon oxide, wherein a top surface of the first conductive feature extends along a bottom surface of the dielectric layer; and
a first barrier layer interposed between the second conductive feature and the dielectric layer, wherein first barrier layer comprises silicon, oxygen, manganese, and nitrogen.

16. The device of claim 15 , wherein the first conductive feature includes copper, aluminum, or tungsten; and the second conductive feature includes copper or copper alloy.

17. The device of claim 15 , further comprising:
a third conductive feature directly on and in physical contact with the second conductive feature, the third conductive feature being wider than the second conductive feature, wherein the dielectric layer also surrounds sidewalls of the third conductive feature, and the first barrier layer is also interposed between the third conductive feature and the dielectric layer and in physical contact with both the third conductive feature and the dielectric layer.

18. The device of claim 17 , wherein the second conductive feature includes copper or copper alloy; and the third conductive feature includes copper, cobalt, tungsten, ruthenium, silver, or gold.

19. The device of claim 15 , further comprising a second barrier layer surrounding sidewalls of the first conductive feature, wherein the second barrier layer comprises titanium nitride, tantalum nitride, tungsten nitride, titanium silicon nitride, or tantalum silicon nitride.

20. The device of claim 1 , wherein the top surface of the first conductive feature extends along a bottom surface of the dielectric layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yang Shin-Yi
• Lee Ming-Han
• Shue Shau-Lin
• Kuo Tz-Jun

Classifications

• H10W20/0552

  by diffusing metallic dopants to react with dielectrics · CPC title

• H10W20/4451

  Semiconductor materials, e.g. polysilicon · CPC title

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/4432

  the principal metal being a noble metal, e.g. gold · CPC title

• H10W20/4424

  Copper alloys · CPC title